Jose Penuelas

About Jose Penuelas

Jose Penuelas, With an exceptional h-index of 18 and a recent h-index of 14 (since 2020), a distinguished researcher at École Centrale de Lyon, specializes in the field of Nanowires, Surfaces and Interfaces, Nanotechnology, Molecular beam epitaxy.

His recent articles reflect a diverse array of research interests and contributions to the field:

Enhanced Light Trapping in GaAs/TiO2-Based Photocathodes for Hydrogen Production

Nanowire-based telecom-band light sources monolithically grown on silicon

Hexagonal Ge grown on self-assisted GaAs nanowires in molecular beam epitaxy

Hexagonal Ge on self-assisted GaAs Nanowires for light emission

La diffraction des photoélectrons X (XPD) comme sonde locale dans des hétérostructures épitaxiées

Single GaAs Nanowires for Near-Infrared Spontaneous Parametric Down-Conversion

Background-free near-infrared biphoton emission from single GaAs nanowires

MBE-growth of hex-Ge shells

Jose Penuelas Information

University

Position

Associate Professor - Institut des Nanotechnologies de Lyon

Citations(all)

1410

Citations(since 2020)

679

Cited By

984

hIndex(all)

18

hIndex(since 2020)

14

i10Index(all)

36

i10Index(since 2020)

19

Email

University Profile Page

Google Scholar

Jose Penuelas Skills & Research Interests

Nanowires

Surfaces and Interfaces

Nanotechnology

Molecular beam epitaxy

Top articles of Jose Penuelas

Enhanced Light Trapping in GaAs/TiO2-Based Photocathodes for Hydrogen Production

ACS Applied Materials & Interfaces

2023/11/9

Nanowire-based telecom-band light sources monolithically grown on silicon

2023/10/4

Hexagonal Ge grown on self-assisted GaAs nanowires in molecular beam epitaxy

2023/9/3

Hexagonal Ge on self-assisted GaAs Nanowires for light emission

2023/7/3

La diffraction des photoélectrons X (XPD) comme sonde locale dans des hétérostructures épitaxiées

2023/5/31

Single GaAs Nanowires for Near-Infrared Spontaneous Parametric Down-Conversion

2023/5/7

Background-free near-infrared biphoton emission from single GaAs nanowires

Nano Letters

2023/4/14

MBE-growth of hex-Ge shells

2023/4/5

Structure, Morphology, and Surface Chemistry of Surgical Masks and Their Evolution up to 10 Washing Cycles

ACS Applied Polymer Materials

2023/2/23

Optical properties of hybrid structures based on ferroelectric polymers and III-V nanowires grown on silicon substrate

2022/4/25

Sébastien Cueff
Sébastien Cueff

H-Index: 11

Jose Penuelas
Jose Penuelas

H-Index: 12

Effect of dry heat treatment between room temperature and 160° C on surgical masks

Materials Letters

2022/2/1

Jose Penuelas
Jose Penuelas

H-Index: 12

Spontaneous Parametric Down-Conversion from GaAs Nanowires at Telecom Wavelength

EPJ Web of Conferences

2022

Out-of-equilibrium supported Pt-Co core-shell nanoparticles stabilized by kinetic trapping at room temperature

The European Physical Journal Applied Physics

2022

Two‐dimensional photonic metasurfaces for slow light‐controlled photocatalysis

Nano Select

2022/1

Growing self-assisted GaAs nanowires up to 80 μm long by molecular beam epitaxy

Nanotechnology

2022/11/11

A Photoemission Analysis of Gold on Silicon Regarding the Initial Stages of Nanowire Metal-Catalyzed Vapor–Liquid–Solid Growth

The Journal of Physical Chemistry C

2022/10/31

Growth and Characterization of Hexagonal Germanium on Self-Assisted GaAs Nanowires by MBE

2022/9/28

Wetting of Ga Droplets in SiO2/Si Cavities: Application to Self-Assisted GaAs Nanowire Growth

Crystal Growth & Design

2022/9/19

Tunable optical anisotropy in epitaxial phase-change VO2 thin films

Nanophotonics

2022/8/23

Efficient Biphoton Generation in LiNbO3 Microcubes and GaAs Nanowires at Telecom Wavelength

2022/8/22

See List of Professors in Jose Penuelas University(École Centrale de Lyon)