Jaemin Shin

Jaemin Shin

University of Notre Dame

H-index: 7

North America-United States

About Jaemin Shin

Jaemin Shin, With an exceptional h-index of 7 and a recent h-index of 7 (since 2020), a distinguished researcher at University of Notre Dame, specializes in the field of Thin-Film-Transistors, BEOL Technologies.

His recent articles reflect a diverse array of research interests and contributions to the field:

Experimental study of endurance characteristics of Al-doped HfO2 ferroelectric capacitor

Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO2 Ferroelectric Capacitor

Steep-Switching Fully Depleted Silicon-on-Insulator (FDSOI) Phase-Transition Field-Effect Transistor With Optimized HfO₂/Al₂O₃-Multilayer-Based Threshold Switching Device

Impact of depolarization electric-field and charge trapping on the coercive voltage of an Si: HfO2-based ferroelectric capacitor

Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System

Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate

Understanding of polarization-induced threshold voltage shift in ferroelectric-gated field effect transistor for neuromorphic applications

Jaemin Shin Information

University

Position

___

Citations(all)

157

Citations(since 2020)

147

Cited By

67

hIndex(all)

7

hIndex(since 2020)

7

i10Index(all)

5

i10Index(since 2020)

4

Email

University Profile Page

Google Scholar

Jaemin Shin Skills & Research Interests

Thin-Film-Transistors

BEOL Technologies

Top articles of Jaemin Shin

Experimental study of endurance characteristics of Al-doped HfO2 ferroelectric capacitor

Nanotechnology

2023/2/17

Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO2 Ferroelectric Capacitor

Sensors

2022/5/27

Steep-Switching Fully Depleted Silicon-on-Insulator (FDSOI) Phase-Transition Field-Effect Transistor With Optimized HfO₂/Al₂O₃-Multilayer-Based Threshold Switching Device

IEEE Transactions on Electron Devices

2021/2/2

Impact of depolarization electric-field and charge trapping on the coercive voltage of an Si: HfO2-based ferroelectric capacitor

Semiconductor Science and Technology

2020/11/6

Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System

IEEE Journal of the Electron Devices Society

2020/6/10

Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate

Micromachines

2020/5/21

Understanding of polarization-induced threshold voltage shift in ferroelectric-gated field effect transistor for neuromorphic applications

Electronics

2020/4/25

Jaemin Shin
Jaemin Shin

H-Index: 3

Changhwan Shin
Changhwan Shin

H-Index: 23

See List of Professors in Jaemin Shin University(University of Notre Dame)

Co-Authors

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