Hadi Lotfi

About Hadi Lotfi

Hadi Lotfi, With an exceptional h-index of 3 and a recent h-index of 3 (since 2020), a distinguished researcher at Universität Stuttgart, specializes in the field of RF, mm-wave.

His recent articles reflect a diverse array of research interests and contributions to the field:

A Four-Channel BiCMOS Transmitter for a Quantum Magnetometer Based on Nitrogen-Vacancy Centers in Diamond

Design of Compact Current-Drive Power Amplifiers for the Efficient Control of Spin Qubits

A Diamond Quantum Magnetometer Based on a Chip-Integrated 4-way Transmitter in 130-nm SiGe BiCMOS

A 7 GHz VCO-based EPR spectrometer incorporating a UWB data link

A Compact C-band EPR-on-a-chip Transceiver in 130-nm SiGe BiCMOS

Analysis and design of d-band cascode sige bicmos amplifiers with gain-bandwidth product enhanced by load reflection

150 GHz Differential Amplifiers with Lumped-Elements Matching Networks in 55 nm SiGe BiCMOS

Design of Compact D-Band Amplifiers With Accurate Modeling of Inductors and Current Return Paths in 55-nm SiGe BiCMOS

Hadi Lotfi Information

University

Position

Ph.D. Candidate Germany

Citations(all)

35

Citations(since 2020)

35

Cited By

9

hIndex(all)

3

hIndex(since 2020)

3

i10Index(all)

1

i10Index(since 2020)

1

Email

University Profile Page

Google Scholar

Hadi Lotfi Skills & Research Interests

RF

mm-wave

Top articles of Hadi Lotfi

A Four-Channel BiCMOS Transmitter for a Quantum Magnetometer Based on Nitrogen-Vacancy Centers in Diamond

IEEE Journal of Solid-State Circuits

2024/1/19

Design of Compact Current-Drive Power Amplifiers for the Efficient Control of Spin Qubits

2023/12/4

Hadi Lotfi
Hadi Lotfi

H-Index: 1

Jens Anders
Jens Anders

H-Index: 14

A Diamond Quantum Magnetometer Based on a Chip-Integrated 4-way Transmitter in 130-nm SiGe BiCMOS

2023/6/11

A 7 GHz VCO-based EPR spectrometer incorporating a UWB data link

2022/6/19

Hadi Lotfi
Hadi Lotfi

H-Index: 1

Jens Anders
Jens Anders

H-Index: 14

A Compact C-band EPR-on-a-chip Transceiver in 130-nm SiGe BiCMOS

2022/6/12

Hadi Lotfi
Hadi Lotfi

H-Index: 1

Jens Anders
Jens Anders

H-Index: 14

Analysis and design of d-band cascode sige bicmos amplifiers with gain-bandwidth product enhanced by load reflection

IEEE Transactions on Microwave Theory and Techniques

2021/7/21

Hadi Lotfi
Hadi Lotfi

H-Index: 1

Andrea Mazzanti
Andrea Mazzanti

H-Index: 3

150 GHz Differential Amplifiers with Lumped-Elements Matching Networks in 55 nm SiGe BiCMOS

2020/11/23

Hadi Lotfi
Hadi Lotfi

H-Index: 1

Andrea Mazzanti
Andrea Mazzanti

H-Index: 3

Design of Compact D-Band Amplifiers With Accurate Modeling of Inductors and Current Return Paths in 55-nm SiGe BiCMOS

IEEE Solid-State Circuits Letters

2020/7/31

Hadi Lotfi
Hadi Lotfi

H-Index: 1

Andrea Mazzanti
Andrea Mazzanti

H-Index: 3

A reconfigurable highly-linear CMOS transceiver core chip for X-band phased arrays

AEU-International Journal of Electronics and Communications

2020/2/1

See List of Professors in Hadi Lotfi University(Universität Stuttgart)

Co-Authors

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