Fumiyasu Oba

About Fumiyasu Oba

Fumiyasu Oba, With an exceptional h-index of 59 and a recent h-index of 38 (since 2020), a distinguished researcher at Tokyo Institute of Technology, specializes in the field of Computational materials science, first principles calculations, semiconductors, defects.

His recent articles reflect a diverse array of research interests and contributions to the field:

Fully autonomous materials screening methodology combining first-principles calculations, machine learning and high-performance computing system

Dielectric ceramic composition and ceramic capacitor

Slab surface passivation and its application to band offset calculations for polar heterointerfaces of zinc-blende semiconductors

Computational design and exploration of nitride and oxide semiconductors

Emergence of Dynamically‐Disordered Phases During Fast Oxygen Deintercalation Reaction of Layered Perovskite

Solar cell

Chemical trends of surface reconstruction and band positions of nonmetallic perovskite oxides from first principles

Single‐atom microscopy in wide‐bandgap nitrides

Fumiyasu Oba Information

University

Position

Laboratory for Materials and Structures

Citations(all)

18030

Citations(since 2020)

8696

Cited By

13004

hIndex(all)

59

hIndex(since 2020)

38

i10Index(all)

143

i10Index(since 2020)

102

Email

University Profile Page

Google Scholar

Fumiyasu Oba Skills & Research Interests

Computational materials science

first principles calculations

semiconductors

defects

Top articles of Fumiyasu Oba

Fully autonomous materials screening methodology combining first-principles calculations, machine learning and high-performance computing system

Science and Technology of Advanced Materials: Methods

2023/12/31

Dielectric ceramic composition and ceramic capacitor

2023/12/5

Slab surface passivation and its application to band offset calculations for polar heterointerfaces of zinc-blende semiconductors

Physical Review Materials

2023/8/8

Tianwei Wang
Tianwei Wang

H-Index: 1

Fumiyasu Oba
Fumiyasu Oba

H-Index: 35

Computational design and exploration of nitride and oxide semiconductors

Journal of the Ceramic Society of Japan

2023/8/1

Fumiyasu Oba
Fumiyasu Oba

H-Index: 35

Emergence of Dynamically‐Disordered Phases During Fast Oxygen Deintercalation Reaction of Layered Perovskite

Advanced Science

2023/7

Solar cell

2014/11/20

Chemical trends of surface reconstruction and band positions of nonmetallic perovskite oxides from first principles

Chemistry of Materials

2023/2/21

Single‐atom microscopy in wide‐bandgap nitrides

International Journal of Applied Ceramic Technology

2023/1

Charge corrections for electronic transitions at defects with ionic and electronic screening

2022/6

Phase variation of ferroelectric by selective reinforcement in the (Nb,Ta)-O covalent bonds

Physical Review Materials

2022/4/25

Recommendation of interstitial hydrogen positions in metal oxides

Computational Materials Science

2022/2/15

Yu Kumagai
Yu Kumagai

H-Index: 24

Fumiyasu Oba
Fumiyasu Oba

H-Index: 35

Systematic study of grain boundary atomistic structures and related properties in cubic zirconia bicrystals

International Journal of Materials Research

2022/1/22

Defect formation and carrier compensation in layered oxychalcogenide La 2 CdO 2 Se 2: an insight from first principles

Journal of Materials Chemistry C

2022

Tuning the optical band gap and electrical properties of NiO thin films by nitrogen doping: A joint experimental and theoretical study

RSC advances

2022

Adaptive sampling methods via machine learning for materials screening

Science and Technology of Advanced Materials: Methods

2022/12/31

Unique Atomic and Electronic Structures of Oxygen Vacancies in Amorphous SnO2 from First Principles and Informatics

The Journal of Physical Chemistry C

2022/11/1

Hole-doping to a Cu (I)-based semiconductor with an isovalent cation: Utilizing a complex defect as a shallow acceptor

Journal of the American Chemical Society

2022/9/1

Multi-junction light energy conversion element, device comprising the same, and fabrication method of SnZn2N2

2022/8/16

Switchable electric dipole from polaron localization in dielectric crystals

Physical review letters

2022/6/28

Inorganic compound semiconductor, method for manufacturing same, and light energy conversion element using same

2021/12/30

See List of Professors in Fumiyasu Oba University(Tokyo Institute of Technology)

Co-Authors

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