Fumiyasu Oba
Tokyo Institute of Technology
H-index: 59
Asia-Japan
Top articles of Fumiyasu Oba
Fully autonomous materials screening methodology combining first-principles calculations, machine learning and high-performance computing system
Science and Technology of Advanced Materials: Methods
2023/12/31
Dielectric ceramic composition and ceramic capacitor
2023/12/5
Slab surface passivation and its application to band offset calculations for polar heterointerfaces of zinc-blende semiconductors
Physical Review Materials
2023/8/8
Tianwei Wang
H-Index: 1
Fumiyasu Oba
H-Index: 35
Computational design and exploration of nitride and oxide semiconductors
Journal of the Ceramic Society of Japan
2023/8/1
Fumiyasu Oba
H-Index: 35
Emergence of Dynamically‐Disordered Phases During Fast Oxygen Deintercalation Reaction of Layered Perovskite
Advanced Science
2023/7
Solar cell
2014/11/20
Chemical trends of surface reconstruction and band positions of nonmetallic perovskite oxides from first principles
Chemistry of Materials
2023/2/21
Single‐atom microscopy in wide‐bandgap nitrides
International Journal of Applied Ceramic Technology
2023/1
Charge corrections for electronic transitions at defects with ionic and electronic screening
2022/6
Phase variation of ferroelectric by selective reinforcement in the (Nb,Ta)-O covalent bonds
Physical Review Materials
2022/4/25
Recommendation of interstitial hydrogen positions in metal oxides
Computational Materials Science
2022/2/15
Yu Kumagai
H-Index: 24
Fumiyasu Oba
H-Index: 35
Systematic study of grain boundary atomistic structures and related properties in cubic zirconia bicrystals
International Journal of Materials Research
2022/1/22
Defect formation and carrier compensation in layered oxychalcogenide La 2 CdO 2 Se 2: an insight from first principles
Journal of Materials Chemistry C
2022
Tuning the optical band gap and electrical properties of NiO thin films by nitrogen doping: A joint experimental and theoretical study
RSC advances
2022
Adaptive sampling methods via machine learning for materials screening
Science and Technology of Advanced Materials: Methods
2022/12/31
Unique Atomic and Electronic Structures of Oxygen Vacancies in Amorphous SnO2 from First Principles and Informatics
The Journal of Physical Chemistry C
2022/11/1
Hole-doping to a Cu (I)-based semiconductor with an isovalent cation: Utilizing a complex defect as a shallow acceptor
Journal of the American Chemical Society
2022/9/1
Yu Kumagai
H-Index: 24
Yalun Tang
H-Index: 2
Kenji Nomura
H-Index: 55
Fumiyasu Oba
H-Index: 35
Hideo Hosono
H-Index: 96
Multi-junction light energy conversion element, device comprising the same, and fabrication method of SnZn2N2
2022/8/16
Switchable electric dipole from polaron localization in dielectric crystals
Physical review letters
2022/6/28
Inorganic compound semiconductor, method for manufacturing same, and light energy conversion element using same
2021/12/30