Dong-Sing Wuu

About Dong-Sing Wuu

Dong-Sing Wuu, With an exceptional h-index of 48 and a recent h-index of 24 (since 2020), a distinguished researcher at National Chung Hsing University, specializes in the field of Optoelectronic Materials & Devices, Thin Film Technology.

His recent articles reflect a diverse array of research interests and contributions to the field:

The Enhanced Performance of Oxide Thin-Film Transistors Fabricated by a Two-Step Deposition Pressure Process

IGZO-TFT with High-k HfO2 Dielectric Layer on Flexible Substrate Prepared by In-line HiPIMS System at Room Temperature

Cu-doped lithium oxide films with high mobility and bandgap prepared by pulsed direct-current sputtering

MoS2/TiO2/graphite felt electrode preparation for capacitive deionization device performance improvement

Morphological investigation and pH sensing properties of β-Ga2O3 EGFET-pH sensor

PEALD deposited aluminum hafnium mixed oxide dielectrics for amorphous-IGZO TFTs

Growth and Performance Enhancement of Sputtered ZnGa2O4 MOSFETs on Sapphire Substrates

Effect of AlN/GaN supercycle ratio on properties of AlxGa1− xN films using super-cycle plasma enhanced atomic layer deposition

Dong-Sing Wuu Information

University

Position

Dept. Materials Sci. Engineer.

Citations(all)

9502

Citations(since 2020)

3134

Cited By

7610

hIndex(all)

48

hIndex(since 2020)

24

i10Index(all)

231

i10Index(since 2020)

98

Email

University Profile Page

Google Scholar

Dong-Sing Wuu Skills & Research Interests

Optoelectronic Materials & Devices

Thin Film Technology

Top articles of Dong-Sing Wuu

The Enhanced Performance of Oxide Thin-Film Transistors Fabricated by a Two-Step Deposition Pressure Process

Nanomaterials

2024/4/17

Hua Xu
Hua Xu

H-Index: 9

Dong-Sing Wuu
Dong-Sing Wuu

H-Index: 24

IGZO-TFT with High-k HfO2 Dielectric Layer on Flexible Substrate Prepared by In-line HiPIMS System at Room Temperature

Journal of Science: Advanced Materials and Devices

2024/4/16

Hua Xu
Hua Xu

H-Index: 9

Dong-Sing Wuu
Dong-Sing Wuu

H-Index: 24

Cu-doped lithium oxide films with high mobility and bandgap prepared by pulsed direct-current sputtering

Vacuum

2024/4/1

Jie Huang
Jie Huang

H-Index: 9

Dong-Sing Wuu
Dong-Sing Wuu

H-Index: 24

MoS2/TiO2/graphite felt electrode preparation for capacitive deionization device performance improvement

Surface and Coatings Technology

2024/2/10

Yu-Xuan Zhang
Yu-Xuan Zhang

H-Index: 1

Dong-Sing Wuu
Dong-Sing Wuu

H-Index: 24

Morphological investigation and pH sensing properties of β-Ga2O3 EGFET-pH sensor

Materials Science and Engineering: B

2024/2/1

Dong-Sing Wuu
Dong-Sing Wuu

H-Index: 24

PEALD deposited aluminum hafnium mixed oxide dielectrics for amorphous-IGZO TFTs

Ceramics International

2024/2/1

Peng Gao
Peng Gao

H-Index: 8

Dong-Sing Wuu
Dong-Sing Wuu

H-Index: 24

Growth and Performance Enhancement of Sputtered ZnGa2O4 MOSFETs on Sapphire Substrates

ACS Applied Electronic Materials

2024/1/17

Dong-Sing Wuu
Dong-Sing Wuu

H-Index: 24

Effect of AlN/GaN supercycle ratio on properties of AlxGa1− xN films using super-cycle plasma enhanced atomic layer deposition

Journal of Alloys and Compounds

2024/1/5

Peng Gao
Peng Gao

H-Index: 8

Dong-Sing Wuu
Dong-Sing Wuu

H-Index: 24

Yu Qiu
Yu Qiu

H-Index: 2

Enhanced Responsivity of Solar Blind Ultraviolet Photodetector by PEALD Deposited Zn-Doped Ga2O3 Thin Films

IEEE Transactions on Electron Devices

2024/1

Chen Wang
Chen Wang

H-Index: 22

Dong-Sing Wuu
Dong-Sing Wuu

H-Index: 24

First-principles investigations and MOCVD growth of Si-doped β-Ga2O3 thin films on sapphire substrates for enhancing Schottky barrier diode characteristics

Materials Science in Semiconductor Processing

2024/8/1

Dong-Sing Wuu
Dong-Sing Wuu

H-Index: 24

Performance comparison of InGaN-based 40–80 μm micro-LEDs fabricated with and without plasma etching

Materials Today Advances

2024/6/1

Hsiao-Wen Zan
Hsiao-Wen Zan

H-Index: 21

Dong-Sing Wuu
Dong-Sing Wuu

H-Index: 24

Synthesis, coating, and application of a novel cadmium-free red perovskite quantum dot for micro LED technology

Materials Science and Engineering: B

2024/6/1

Dong-Sing Wuu
Dong-Sing Wuu

H-Index: 24

Crystal phase control of copper oxide thin films by process pressure during high power impulse magnetron sputtering

Journal of Science: Advanced Materials and Devices

2024/6/1

Jie Huang
Jie Huang

H-Index: 9

Dong-Sing Wuu
Dong-Sing Wuu

H-Index: 24

Low temperature (002)-oriented zinc oxide films prepared using ozone-based spatial atomic layer deposition

Ceramics International

2024/4/30

Effect of substrate temperature on growth mechanism and properties of PEALD-MgO dielectric films for amorphous-IGZO TFTs

Surface and Coatings Technology

2024/4/21

Improved electrical properties of micro light-emitting diode displays by ion implantation technology

Discover Nano

2023/3/20

Yi-Hsin Lin
Yi-Hsin Lin

H-Index: 4

Dong-Sing Wuu
Dong-Sing Wuu

H-Index: 24

Interface engineering in epitaxial growth of sputtered β-Ga2O3 films on Si substrates via TiN (111) buffer layer for Schottky barrier diodes

Materials Today Advances

2023/3/1

Dong-Sing Wuu
Dong-Sing Wuu

H-Index: 24

Electrical performance study of Schottky barrier diodes using ion implanted β-Ga2O3 epilayers grown on sapphire substrates

Materials Today Advances

2023/3/1

Dong-Sing Wuu
Dong-Sing Wuu

H-Index: 24

Characteristics of High-Power Impulse Magnetron Sputtering ITO/Ag/ITO Films for Application in Transparent Micro-LED Displays

ACS Applied Electronic Materials

2023/2/6

Dong-Sing Wuu
Dong-Sing Wuu

H-Index: 24

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

Surfaces and Interfaces

2023/2/1

See List of Professors in Dong-Sing Wuu University(National Chung Hsing University)