Cheng-Wei Lee
Colorado School of Mines
H-index: 8
North America-United States
Top articles of Cheng-Wei Lee
Defect control strategies for Al1− xGdxN alloys
ChemRxiv
2023/6
Cheng-Wei Lee
H-Index: 6
Keisuke Yazawa
H-Index: 5
Reliable operation of Cr2O3: Mg/β-Ga2O3 p–n heterojunction diodes at 600° C
Applied Physics Letters
2024/4/8
Cheng-Wei Lee
H-Index: 6
Ryan O'Hayre
H-Index: 39
Electronic stopping power predictions from machine learning
Bulletin of the American Physical Society
2024/3/7
Cheng-Wei Lee
H-Index: 6
Ben Blaiszik
H-Index: 21
NiGaO interfacial layers in NiO/GaO heterojunction diodes at high temperature
arXiv preprint arXiv:2401.06924
2024/1/12
Defect Chemistry and Doping of Lead Phosphate Oxo Apatite Pb10(PO4)6O
ACS Energy Letters
2024/1/10
Cheng-Wei Lee
H-Index: 6
Prashun Gorai
H-Index: 19
Accelerating Electronic Stopping Power Predictions by 10 Million Times with a Combination of Time-Dependent Density Functional Theory and Machine Learning
arXiv preprint arXiv:2311.00787
2023/11/1
Ben Blaiszik
H-Index: 21
Cheng-Wei Lee
H-Index: 6
Switching it Up: New Mechanisms Revealed in Wurtzite-type Ferroelectrics
2023/9/29
Defects and Oxygen Impurities in Ferroelectric Wurtzite AlScN Alloys
arXiv preprint arXiv:2308.14310
2023/8/28
Cheng-Wei Lee
H-Index: 6
Prashun Gorai
H-Index: 19
Emerging materials and design principles for wurtzite-type ferroelectrics
Matter
2023/7/18
Identifying native point defect configurations in α-alumina
Journal of Physics: Condensed Matter
2023/5/18
Cheng-Wei Lee
H-Index: 6
Computational insights into phase equilibria between wide-gap semiconductors and contact materials
ACS Applied Electronic Materials
2023
Cheng-Wei Lee
H-Index: 6
Computationally predicted electronic structure of β-Ga2O3 (001)/NiO interface
APS March Meeting Abstracts
2023
Cheng-Wei Lee
H-Index: 6
Vladan Stevanovic
H-Index: 38
Native Defects and Extrinsic Dopants in Ultrawide Band Gap (III)BO3 Compounds
APS March Meeting Abstracts
2023
Cheng-Wei Lee
H-Index: 6
Vladan Stevanovic
H-Index: 38
An emerging n-type dopable ternary wide bandgap oxide group: In2Ge,Si2O7
APS March Meeting Abstracts
2023
Cheng-Wei Lee
H-Index: 6
Vladan Stevanovic
H-Index: 38
Defect Chemistry and Doping of Ultrawide Band Gap (III)BO3 Compounds
Chemistry of Materials
2023/11/22
Cheng-Wei Lee
H-Index: 6
Computational Identification of Ternary Wide-Band-Gap Oxides for High-Power Electronics
PRX Energy
2022/12/20
Cheng-Wei Lee
H-Index: 6
Prashun Gorai
H-Index: 19
Electron dynamics in extended systems within real-time time-dependent density-functional theory
2022/12
AlScO3 perovskite—An∼ 8 eV bandgap oxide predicted to exhibit low small hole polaron ionization energies and p-type conductivity at elevated temperatures
Applied Physics Letters
2022/9/5
Cheng-Wei Lee
H-Index: 6
Prashun Gorai
H-Index: 19
Transition metal impurities in silicon: computational search for a semiconductor qubit
npj Computational Materials
2022/8/19
Cheng-Wei Lee
H-Index: 6
Meenakshi Singh
H-Index: 9
Ternary Wide Band Gap Oxides for High-Power Electronics Identified Computationally
arXiv preprint arXiv:2204.09158
2022/4/19
Cheng-Wei Lee
H-Index: 6
Prashun Gorai
H-Index: 19
Co-Authors
