Caixia Hou

University of Canterbury

H-index: 8

Oceania-New Zealand

About Caixia Hou

Caixia Hou, With an exceptional h-index of 8 and a recent h-index of 8 (since 2020), a distinguished researcher at University of Canterbury, specializes in the field of wide band gap metal oxide semiconductors.

His recent articles reflect a diverse array of research interests and contributions to the field:

Performance of in situ oxidized platinum/iridium alloy Schottky contacts on (001),(2¯ 01), and (010) β-Ga2O3

Dramatic Improvement in the Rectifying Properties of Pd Schottky Contacts on β-Ga₂O₃ During Their High-Temperature Operation

High temperature (500° C) operating limits of oxidized platinum group metal (PtOx, IrOx, PdOx, RuOx) Schottky contacts on β-Ga2O3

Caixia Hou Information

University	University of Canterbury
Position	PhD of Electrical and Computer Engineering
Citations(all)	301
Citations(since 2020)	292
Cited By	110
hIndex(all)	8
hIndex(since 2020)	8
i10Index(all)	8
i10Index(since 2020)	8
Email	Access Email
University Profile Page	University of Canterbury
Google Scholar	View Google Scholar Profile

Caixia Hou Skills & Research Interests

wide band gap metal oxide semiconductors

Caixia Hou

University of Canterbury

About Caixia Hou

Caixia Hou Information

Caixia Hou Skills & Research Interests

Top articles of Caixia Hou

Performance of in situ oxidized platinum/iridium alloy Schottky contacts on (001),(2¯ 01), and (010) β-Ga2O3

Dramatic Improvement in the Rectifying Properties of Pd Schottky Contacts on β-Ga₂O₃ During Their High-Temperature Operation

Caixia Hou

High temperature (500° C) operating limits of oxidized platinum group metal (PtOx, IrOx, PdOx, RuOx) Schottky contacts on β-Ga2O3

Co-Authors

Martin W. Allen

Rodrigo Martinez Gazoni