Bongkwon Son

About Bongkwon Son

Bongkwon Son, With an exceptional h-index of 10 and a recent h-index of 10 (since 2020), a distinguished researcher at Nanyang Technological University, specializes in the field of Integrated photonics, Photodetectors.

His recent articles reflect a diverse array of research interests and contributions to the field:

All‐Around HfO2 Stressor for Tensile Strain in GeSn‐on‐Insulator Nanobeam Lasers

High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering

Dynamic tuning of WSe2 exciton emission via laser annealing

Light emission and engineered carrier lifetime in strained 2D materials towards developing wavelength-tunable integrated emitters

Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiOx Surface Passivation

Flexible TiN/Ge photodetectors with enhanced responsivity via localized surface plasmon resonance and strain modulation

Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain

Bongkwon Son Information

University

Position

Ph.D. Candidate EEE

Citations(all)

384

Citations(since 2020)

384

Cited By

49

hIndex(all)

10

hIndex(since 2020)

10

i10Index(all)

12

i10Index(since 2020)

12

Email

University Profile Page

Google Scholar

Bongkwon Son Skills & Research Interests

Integrated photonics

Photodetectors

Top articles of Bongkwon Son

All‐Around HfO2 Stressor for Tensile Strain in GeSn‐on‐Insulator Nanobeam Lasers

Advanced Optical Materials

2023/9/27

High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering

Advanced Science

2023/6

Dynamic tuning of WSe2 exciton emission via laser annealing

2023/3/17

Light emission and engineered carrier lifetime in strained 2D materials towards developing wavelength-tunable integrated emitters

2023/3/17

Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain

Optics Letters

2023/2/1

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiOx Surface Passivation

Advanced Materials Technologies

2023/8

Flexible TiN/Ge photodetectors with enhanced responsivity via localized surface plasmon resonance and strain modulation

Journal of Materials Chemistry C

2023

Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain

Applied Physics Letters

2022/5/16

Strongly Modified Broadband Ultrafast Photoluminescence at Telecom Wavelengths from CVD Monolayer Graphene

2022/5/15

Metal-semiconductor-metal Photodetectors on a GeSn-on-insulator Platform for 2 µm Applications

2019

Tensile-strained direct bandgap GeSnOI micro/nanostructures by harnessing residual strain

2022/3/5

High‑performance GE/GESN photodetectors in near‑and mid‑infrared range

2022/3

Bongkwon Son
Bongkwon Son

H-Index: 4

Grating and hole-array enhanced germanium lateral pin photodetectors on an insulator platform

Optics Express

2022/2/14

Direct chemisorption-assisted nanotransfer printing with wafer-scale uniformity and controllability

ACS nano

2022/1/3

A heavily doped germanium pyramid array for tunable optical antireflection in the broadband mid-infrared range

Journal of Materials Chemistry C

2022

Efficient Avalanche Photodiodes with a WSe2/MoS2 Heterostructure via Two-Photon Absorption

Nano Letters

2022/11/22

(Digital Presentation) Gesnoi Laser Technology for Photonic-Integrated Circuits

Electrochemical Society Meeting Abstracts 242

2022/10/9

Ultrafast light emission at telecom wavelengths from a wafer-scale monolayer graphene enabled by Fabry–Perot interferences

Optics Letters

2022/9/15

Systematic study on photoexcited carrier dynamics related to defects in GeSn films with low Sn content at room temperature

Semiconductor Science and Technology

2021/11/12

Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm

Journal of Alloys and Compounds

2021/8/15

See List of Professors in Bongkwon Son University(Nanyang Technological University)

Co-Authors

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