yanfeng ge

About yanfeng ge

yanfeng ge, With an exceptional h-index of 17 and a recent h-index of 17 (since 2020), a distinguished researcher at Yanshan University, specializes in the field of electron-phonon coupling.

His recent articles reflect a diverse array of research interests and contributions to the field:

High piezoelectric coefficients and rich phase transitions in ternary TlXY (X= S, Se; Y= Cl, Br, I) monolayers

First-principles Study of Carrier Mobility in MX (M= Sn, Pb; X= P, As) Monolayers

First-principles study of two-dimensional transition metal carbide M n+ 1 C n O 2 (M= Nb, Ta)

Janus Single‐Layer CoClBr: A Direct Ferromagnetic Semiconductor with Controllable BandGap and Enhanced Magnetic Anisotropy Under Strain

Properties of typical non-metallic inclusions in steel: First-principles calculations

Carrier and phonon transport in 2D InSe and its Janus structures

Superior toughness and hardness in graphite–diamond hybrid induced by coherent interfaces

Two-dimensional XY ferromagnetism above room temperature in Janus monolayer V 2 XN (X= P, As)

yanfeng ge Information

University

Position

___

Citations(all)

1029

Citations(since 2020)

873

Cited By

435

hIndex(all)

17

hIndex(since 2020)

17

i10Index(all)

24

i10Index(since 2020)

24

Email

University Profile Page

Google Scholar

yanfeng ge Skills & Research Interests

electron-phonon coupling

Top articles of yanfeng ge

High piezoelectric coefficients and rich phase transitions in ternary TlXY (X= S, Se; Y= Cl, Br, I) monolayers

Physica B: Condensed Matter

2024/4/3

First-principles Study of Carrier Mobility in MX (M= Sn, Pb; X= P, As) Monolayers

arXiv preprint arXiv:2403.06379

2024/3/11

First-principles study of two-dimensional transition metal carbide M n+ 1 C n O 2 (M= Nb, Ta)

Chinese Journal of Chemical Physics

2019/10/1

Janus Single‐Layer CoClBr: A Direct Ferromagnetic Semiconductor with Controllable BandGap and Enhanced Magnetic Anisotropy Under Strain

Annalen der Physik

2024/1/9

Properties of typical non-metallic inclusions in steel: First-principles calculations

Materials Today Communications

2023/3/1

Carrier and phonon transport in 2D InSe and its Janus structures

2023/2/6

Superior toughness and hardness in graphite–diamond hybrid induced by coherent interfaces

Carbon

2023/1/25

Two-dimensional XY ferromagnetism above room temperature in Janus monolayer V 2 XN (X= P, As)

Physical Chemistry Chemical Physics

2023

First-principles study of magnetism in group-IV-doped monolayer GaN

arXiv e-prints

2023/1

Large vertical piezoelectricity and high-temperature ferromagnetism in 2D ferromagnetic semiconductors MnAsX (X= I, Br, Cl)

Physica E: Low-dimensional Systems and Nanostructures

2023/1/1

Superconductivity in compounds of sodium-intercalated graphite

Physical Review B

2023/12/5

First principles study of two-dimensional high-temperature antiferromagnetic semiconductor MoICl2 under strain effect

AIP Advances

2023/12/1

Superconductivity in two-dimensional MB4 (M= V, Nb, and Ta)

New Journal of Physics

2023/10/13

Prediction of Interesting Ferromagnetism in Janus Semiconducting Cr2AsP Monolayer

Annalen der Physik

2023/10

The unexpected magnetism in 2D group-IV-doped GaN for spintronic applications

Physica B: Condensed Matter

2023/10/1

Prediction of nodal-line fermion and phonon-mediated superconductivity in bilayer α-borophene

Superconductor Science and Technology

2023/9/5

Formation of 2D GaXY (X= S, Se; Y= F, Cl, Br, I) with enhanced piezoelectricity via decomposition of Ga-monochalcogenide by halogenation

Applied Physics Letters

2023/8/7

Monolayer MX2 (M= Cr, Mn; X= Se, Te) with a square lattice: A ferromagnetic half-metal with high Curie temperature

Results in Physics

2023/8/1

Graphite–hexagonal diamond hybrid with diverse properties

Applied Physics Reviews

2023/6/1

Monolayer chromium dichloride: An anti-ferromagnetic semiconductor with a high Néel temperature above room temperature

Physica E: Low-dimensional Systems and Nanostructures

2023/5/1

See List of Professors in yanfeng ge University(Yanshan University)

Co-Authors

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