Uma Sharma
Indian Institute of Technology Bombay
H-index: 10
Asia-India
Top articles of Uma Sharma
A Generic Framework for MOSFET Reliability—Part II: Gate and Drain Stress—HCD
IEEE Transactions on Electron Devices
2023/10/2
CARAT–A reliability analysis framework for BTI-HCD aging in circuits
Solid-State Electronics
2023/3/1
BAT Framework Modeling of AC NBTI: Stress Mode, Duty Cycle and Frequency
2021/11
BAT Framework Modeling of RMG HKMG SOI FinFETs
2021/11
Cool-CMOS Technology for Next Generation High Performance Computing
2021/4/22
Stochastic and Deterministic Modeling Frameworks for Time Kinetics of Gate Insulator Traps During and After Hot Carrier Stress in MOSFETs
2021/3
Modeling of HCD Kinetics Under Full VG – VD Space, Different Experimental Conditions and Across Different Device Architectures
IEEE Journal of the Electron Devices Society
2020
Uma Sharma
H-Index: 7
Souvik Mahapatra
H-Index: 25
TCAD Framework for HCD Kinetics in Low VD Devices Spanning Full VG/VD Space
IEEE Transactions on Electron Devices
2020/9/14
Uma Sharma
H-Index: 7
Himanshu Diwakar
H-Index: 1
Karansingh Thakor
H-Index: 3
Souvik Mahapatra
H-Index: 25
A Review of Hot Carrier Degradation in n-Channel MOSFETs--Part II: Technology Scaling
2020/5/25
Souvik Mahapatra
H-Index: 25
Uma Sharma
H-Index: 7
BTI and HCD Degradation in a Complete 32× 64 bit SRAM Array–including Sense Amplifiers and Write Drivers–under Processor Activity
2020/4/28
Hot Carrier Degradation in Cryo-CMOS
2020/4/28
Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs
2020/4/28
A Cycle-by-Cycle HCD and BTI Compact Model to Calculate FinFET Based RO Ageing Using SPICE
IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
2020
Uma Sharma
H-Index: 7
Souvik Mahapatra
H-Index: 25
A TCAD framework for assessing NBTI impact under drain bias and self-heating effects in replacement metal gate (RMG) p-FinFETs
2020
Uma Sharma
H-Index: 7
Souvik Mahapatra
H-Index: 25
