Stefan Tappertzhofen

Stefan Tappertzhofen

Technische Universität Dortmund

H-index: 23

Europe-Germany

About Stefan Tappertzhofen

Stefan Tappertzhofen, With an exceptional h-index of 23 and a recent h-index of 18 (since 2020), a distinguished researcher at Technische Universität Dortmund, specializes in the field of Nanotechnology, Memristive-Devices, Cryo Electronics, Quantum Electronics, 2D-Materials.

His recent articles reflect a diverse array of research interests and contributions to the field:

Research data supporting" Buried Graphene Heterostructures for Electrostatic Doping of Low-Dimensional Materials"

Programmable mixed-signal circuits

Electrochemical‐Memristor‐Based Artificial Neurons and Synapses—Fundamentals, Applications, and Challenges

Buried graphene heterostructures for electrostatic doping of low-dimensional materials

Transfer-free graphene passivation of sub 100 nm thin Pt and Pt–Cu electrodes for memristive devices

Metal oxides for non-volatile memory: materials, technology and applications

Impact of electrode materials on the performance of amorphous IGZO thin-film transistors

Introduction to non-volatile memory

Stefan Tappertzhofen Information

University

Position

Professor in Micro- and Nanoelectronics

Citations(all)

3501

Citations(since 2020)

1803

Cited By

2558

hIndex(all)

23

hIndex(since 2020)

18

i10Index(all)

29

i10Index(since 2020)

27

Email

University Profile Page

Technische Universität Dortmund

Google Scholar

View Google Scholar Profile

Stefan Tappertzhofen Skills & Research Interests

Nanotechnology

Memristive-Devices

Cryo Electronics

Quantum Electronics

2D-Materials

Top articles of Stefan Tappertzhofen

Title

Journal

Author(s)

Publication Date

Research data supporting" Buried Graphene Heterostructures for Electrostatic Doping of Low-Dimensional Materials"

Alexander Gumprich

Stefan Tappertzhofen

2023/2/6

Programmable mixed-signal circuits

SN Applied Sciences

Stefan Tappertzhofen

2023/12

Electrochemical‐Memristor‐Based Artificial Neurons and Synapses—Fundamentals, Applications, and Challenges

Shaochuan Chen

Teng Zhang

Stefan Tappertzhofen

Yuchao Yang

Ilia Valov

2023/9

Buried graphene heterostructures for electrostatic doping of low-dimensional materials

Nanotechnology

A Gumprich

J Liedtke

S Beck

I Chirca

T Potočnik

...

2023/4/13

Transfer-free graphene passivation of sub 100 nm thin Pt and Pt–Cu electrodes for memristive devices

SN Applied Sciences

S Tappertzhofen

P Braeuninger-Weimer

A Gumprich

I Chirca

T Potočnik

...

2023/3

Metal oxides for non-volatile memory: materials, technology and applications

Panagiotis Dimitrakis

Ilia Valov

Stefan Tappertzhofen

2022/3/1

Impact of electrode materials on the performance of amorphous IGZO thin-film transistors

MRS Advances

Stefan Tappertzhofen

2022/11

Introduction to non-volatile memory

Stefan Tappertzhofen

2022/1/1

Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications (Adv. Mater. 32/2022)

Gianluca Milano

Masakazu Aono

Luca Boarino

Umberto Celano

Tsuyoshi Hasegawa

...

2022/8

Anodic oxidation effects at the copper/silicon oxide interface

Memories-Materials, Devices, Circuits and Systems

S Tappertzhofen

R Ahlmann

2022/7/1

Concept of an efficient self-startup voltage converter with dynamic maximum power point tracking for microscale thermoelectric generators

SN applied sciences

Dominik Merten

JA Singer

H Fiedler

Stefan Tappertzhofen

2022/5

Sub-micrometer pyroelectric tomography of AlScN films

Applied Physics Letters

S Tappertzhofen

S Bette

F Sievers

S Fichtner

S Bröker

...

2021/6/14

Metal Oxides for Non-volatile Memory

Panagiotis Dimitrakis

E Valov

Stefan Tappertzhofen

2021

Memristively programmable transistors

Nanotechnology

Stefan Tappertzhofen

L Nielen

I Valov

R Waser

2021/11/5

Conductive-Bridging Access Memory

Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations

Wenhao Chen

Stefan Tappertzhofen

Hugh J Barnaby

Michael N Kozicki

2021/10/15

Scalable fabrication of cross-plane thin-film thermoelectric generators on organic substrates

Thin Solid Films

J Zimmermann

D Merten

J Finke

E Drabiniok

H Fiedler

...

2021/9/30

Nanoparticle Dynamics in Oxide‐Based Memristive Devices

physica status solidi (a)

Stefan Tappertzhofen

Giuliana Di Martino

Stephan Hofmann

2020/3

See List of Professors in Stefan Tappertzhofen University(Technische Universität Dortmund)

Co-Authors

H-index: 111
Jeremy J. Baumberg

Jeremy J. Baumberg

University of Cambridge

H-index: 106
Xiaoqing Pan

Xiaoqing Pan

University of California, Irvine

H-index: 90
Wei D. Lu

Wei D. Lu

University of Michigan

H-index: 77
Stephan Hofmann

Stephan Hofmann

University of Cambridge

H-index: 60
Michael Kozicki

Michael Kozicki

Arizona State University

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