Shoji Ikeda
Tohoku University
H-index: 57
Asia-Japan
Top articles of Shoji Ikeda
Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memory
2024/4/16
Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction
AIP Advances
2024/2/1
Platinum-based sputtering target, and method for producing the same
2023/12/21
Magnetoresistive element and magnetic memory
2019/4/23
Magnetoresistance effect element and magnetic memory
2020/5/19
Silicon wafer and method for producing silicon wafer
2023/8/3
Field-free spin-orbit torque switching and large dampinglike spin-orbit torque efficiency in synthetic antiferromagnetic systems using interfacial Dzyaloshinskii-Moriya interaction
Physical Review B
2023/7/20
Shoji Ikeda
H-Index: 41
Charge-to-Spin Conversion Efficiency in Synthetic Antiferromagnetic System using Pt-Cu/Ir/Pt-Cu spacer layers
IEEE Transactions on Magnetics
2023/6/5
Shoji Ikeda
H-Index: 41
Enhancement of Damping-Like Spin-Orbit-Torque Efficiency in Synthetic Antiferromagnetic System using Pt-Cu Alloy
2023/5/15
Shoji Ikeda
H-Index: 41
Magnetoresistive effect element and magnetic memory
2023/4/18
Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device
2023/3/21
Magnetic laminated film, magnetic memory element, magnetic memory, and artificial intelligence system
2023/1/26
Correlation between the magnitude of interlayer exchange coupling and charge-to-spin conversion efficiency in a synthetic antiferromagnetic system
Applied Physics Express
2023/1/25
Shoji Ikeda
H-Index: 41
Magnetic tunnel junction element and magnetic memory
2023/1/24
25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance> 107 for eFlash-type MRAM
IEICE Technical Report; IEICE Tech. Rep.
2023/1/23
Integrated circuit device
2012/12/4
Design and Heavy-Ion Testing of MTJ/CMOS Hybrid LSIs for Space-Grade Soft-Error Reliability
2022/3/27
Shoji Ikeda
H-Index: 41
Effect of oxygen incorporation on dynamic magnetic properties in Ta-O/Co-Fe-B bilayer films under out-of-plane and in-plane magnetic fields
AIP Advances
2022/3/1
Enhancement of current to spin-current conversion and spin torque efficiencies in a synthetic antiferromagnetic layer based on a Pt/Ir/Pt spacer layer
Physical Review B
2022/2/22
Shoji Ikeda
H-Index: 41
Magnetic memory element, method for producing same, and magnetic memory
2022/2/22
