Pratyush Buragohain

Pratyush Buragohain

University of Nebraska-Lincoln

H-index: 12

North America-United States

About Pratyush Buragohain

Pratyush Buragohain, With an exceptional h-index of 12 and a recent h-index of 12 (since 2020), a distinguished researcher at University of Nebraska-Lincoln,

His recent articles reflect a diverse array of research interests and contributions to the field:

Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf0.5Zr0.5O2

Duality of switching mechanisms and transient negative capacitance in improper ferroelectrics

High Mobility TMD NMOS and PMOS Transistors and GAA Architecture for Ultimate CMOS Scaling

Process integration and future outlook of 2D transistors

Quantification of the electromechanical measurements by piezoresponse force microscopy

Spontaneous polarization in an ultrathin improper-ferroelectric/dielectric bilayer in a capacitor structure at cryogenic temperatures

Persistent opto-ferroelectric responses in molecular ferroelectrics

Intrinsic ferroelectricity in Y-doped HfO2 thin films

Pratyush Buragohain Information

University

Position

___

Citations(all)

735

Citations(since 2020)

649

Cited By

263

hIndex(all)

12

hIndex(since 2020)

12

i10Index(all)

13

i10Index(since 2020)

13

Email

University Profile Page

Google Scholar

Top articles of Pratyush Buragohain

Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf0.5Zr0.5O2

Nature Communications

2024/1/29

Duality of switching mechanisms and transient negative capacitance in improper ferroelectrics

arXiv preprint arXiv:2309.14639

2023/9/26

High Mobility TMD NMOS and PMOS Transistors and GAA Architecture for Ultimate CMOS Scaling

2023/12/9

Process integration and future outlook of 2D transistors

nature communications

2023/10/12

Quantification of the electromechanical measurements by piezoresponse force microscopy

Advanced Materials

2022/11

Spontaneous polarization in an ultrathin improper-ferroelectric/dielectric bilayer in a capacitor structure at cryogenic temperatures

Physical Review Applied

2022/9/26

Persistent opto-ferroelectric responses in molecular ferroelectrics

Physical Review Materials

2022/7/29

Nanoscale Studies of the Ferroelectric and Electromechanical Properties of Hafnia-Based Capacitors

2022

Voltage-controlled Néel vector rotation in zero magnetic field in high-TN magnetoelectric thin films

Nature communications

2021/3/15

Harnessing Phase Transitions in Antiferroelectric ZrO2 Using the Size Effect

Advanced Electronic Materials

2022/1

Piezoelectricity in hafnia

Nature Communications

2021/12/15

Effect of Film Microstructure on Domain Nucleation and Intrinsic Switching in Ferroelectric Y: HfO2 Thin Film Capacitors

Advanced Functional Materials

2022/2

Persistent Ionic Photo-responses and Frank-Condon Mechanism in Proton-transfer Ferroelectrics

arXiv preprint arXiv:2105.02628

2021/5/6

Electroresistance effect in MoS2-Hf0. 5Zr0. 5O2 heterojunctions

Applied Physics Letters

2021/2/22

Harnessing Phase Transitions in Multifunctional Antiferroelectric ZrO2

Adv. Funct. Mater.

2021

Probing Antiferroelectric‐Ferroelectric Phase Transitions in PbZrO3 Capacitors by Piezoresponse Force Microscopy

Advanced Functional Materials

2020/11

Absence of critical thickness in improper ferroelectric hexagonal-YbFeO3 thin films

2020/9/9

Switching dynamics in Croconic Acid thin film

Bulletin of the American Physical Society

2020/3/5

See List of Professors in Pratyush Buragohain University(University of Nebraska-Lincoln)

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