Paolo PAVAN
Università degli Studi di Modena e Reggio Emilia
H-index: 35
Europe-Italy
Top articles of Paolo PAVAN
Unobtrusive Multimodal Monitoring of Physiological Signals for Driver State Analysis
IEEE Sensors Journal
2024/4/11
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks
IEEE Transactions on Device and Materials Reliability
2024/4/1
Paolo Pavan
H-Index: 21
Francesco Maria Puglisi
H-Index: 18
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD
Journal of Semiconductors
2024
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical AlO/GaN MOS Capacitors
IEEE Transactions on Electron Devices
2023/11/27
The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation
2023/10/8
Paolo Pavan
H-Index: 21
Francesco Maria Puglisi
H-Index: 18
Ultra-low power logic in memory with commercial grade memristors and FPGA-based smart-IMPLY architecture
Microelectronic Engineering
2023/8/15
ANGELS-Smart Steering Wheel for Driver Safety
2023/6/8
Driver drowsiness detection: a machine learning approach on skin conductance
Sensors
2023/4/15
A unified framework to explain random telegraph noise complexity in MOSFETs and RRAMs
2023/3/26
Paolo Pavan
H-Index: 21
Francesco Maria Puglisi
H-Index: 18
Local electric field perturbations due to trapping mechanisms at defects: What random telegraph noise reveals
Journal of Applied Physics
2023/3/21
Paolo Pavan
H-Index: 21
Francesco Maria Puglisi
H-Index: 18
Study of RRAM-Based Binarized Neural Networks Inference Accelerators Using an RRAM Physics-Based Compact Model
2023/3/13
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges
2023/2/1
A hybrid cmos-memristor spiking neural network supporting multiple learning rules
IEEE Transactions on Neural Networks and Learning Systems
2022/9/13
Paolo Pavan
H-Index: 21
Francesco Maria Puglisi
H-Index: 18
Smart material implication using spin-transfer torque magnetic tunnel junctions for logic-in-memory computing
Solid-State Electronics
2022/8/1
Spatially Controlled Generation and Probing of Random Telegraph Noise in Metal Nanocrystal Embedded HfO2 Using Defect Nanospectroscopy
ACS Applied Electronic Materials
2022/7/19
Driver drowsiness detection based on variation of skin conductance from wearable device
2022/7/4
Combining experiments and a novel small signal model to investigate the degradation mechanisms in ferroelectric tunnel junctions
2022/3/27
Paolo Pavan
H-Index: 21
Francesco Maria Puglisi
H-Index: 18
The relevance of trapped charge for leakage and random telegraph noise phenomena
2022/3/27
Paolo Pavan
H-Index: 21
Francesco Maria Puglisi
H-Index: 18
Exploiting blood volume pulse and skin conductance for driver drowsiness detection
2022/11/16
The impact of electrostatic interactions between defects on the characteristics of random telegraph noise
IEEE Transactions on Electron Devices
2022/10/20
Paolo Pavan
H-Index: 21
Francesco Maria Puglisi
H-Index: 18
