Nur Atiqah Hamzah
Universiti Sains Malaysia
H-index: 5
Asia-Malaysia
Top articles of Nur Atiqah Hamzah
X-Rays Diffraction Study of InGaN/GaN Heterostructures Grown by MOCVD Technique at Different Temperatures
Defect and Diffusion Forum
2023/6/30
Nur Atiqah Hamzah
H-Index: 1
Sha Shiong Ng
H-Index: 14
Rapid Thermal Annealing Process Toward Enhancement of ITO Thin Films
Key Engineering Materials
2023/6/23
Nur Atiqah Hamzah
H-Index: 1
Zainuriah Hassan
H-Index: 37
Highly efficient near ultraviolet LEDs using InGaN/GaN/AlxGa1-xN/GaN multiple quantum wells at high temperature on sapphire substrate
Materials Science in Semiconductor Processing
2023/3/15
Parasitic behavior of different V/III ratios on the properties of InGaN/GaN heterostructures by MOCVD technique
Journal of Alloys and Compounds
2023/3/5
A DFT+ U study of structural, electronic and optical properties of Ag-and Cu-doped ZnO
Microelectronics International
2023/1/2
Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures
Microelectronics International
2023/1/2
Numerical simulation of homojunction pin In0. 4Ga0. 6N solar cell with different absorber layer configurations
Optik
2022/12/1
Recent advances and challenges in the MOCVD growth of indium gallium nitride: A brief review
2022/6/1
Influence of growth temperature of p-GaN layer on the characteristics of InGaN/GaN blue light emitting diodes
International Journal of Nanotechnology
2022
Inhomogeneity of InGaN/GaN MQWs in InGaN based blue LED by atom probe tomography and secondary ion mass spectrometry
International Journal of Nanotechnology
2022
Effects of different growth temperatures towards indium incorporation in InGaN quantum well heterostructure
International Journal of Nanotechnology
2022
An insight into growth transition in AlN epitaxial films produced by metal-organic chemical vapour deposition at different growth temperatures
Superlattices and Microstructures
2022/1/1
Effects of three-step magnesium doping in p-GaN layer on the properties of InGaN-based light-emitting diode
Microelectronics International
2021/9/2
Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes
Microelectronics International
2021/7/19
Zainuriah Hassan
H-Index: 37
Sha Shiong Ng
H-Index: 14
Ezzah Azimah Alias
H-Index: 3
Nur Atiqah Hamzah
H-Index: 1
Inhomogeneity Of An InGaN Based Blue LED Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT)
2020/12/2
Nur Atiqah Hamzah
H-Index: 1
Norzaini Zainal
H-Index: 8
Sha Shiong Ng
H-Index: 14
Zainuriah Hassan
H-Index: 37
The growth of AlN single layer on sapphire at low pressure using metalorganic chemical vapor deposition (MOCVD)
Journal of Physics: Conference Series
2020/5/1
Zainuriah Hassan
H-Index: 37
Nur Atiqah Hamzah
H-Index: 1
Effect of varying thermal annealing temperatures on the surface and electrical properties of Mg-doped GaN
Journal of Physics: Conference Series
2020/5/1
Role of RF Magnetron Sputtering Power on Optical and Electrical Properties of ITO Films on Soda-Lime Glass Substrates
Journal of Physics: Conference Series
2020/5/1
Effect of post-annealing in oxygen environment on ITO thin films deposited using RF magnetron sputtering
Journal of Physics: Conference Series
2020/5/1
