Min Sup Choi
Columbia University in the City of New York
H-index: 19
North America-United States
Top articles of Min Sup Choi
Plasma and Gas‐based Semiconductor Technologies for 2D Materials with Computational Simulation & Electronic Applications
2024/2
Minji Kang
H-Index: 12
Min Sup Choi
H-Index: 15
Analysis of p-Type Doping in Graphene Induced by Monolayer-Oxidized TMDs
ACS Applied Materials & Interfaces
2024/1/12
Investigating the Impact of Oxygen Surface Plasma Treatments on the Structural and Electrical Properties of Graphene
Applied Science and Convergence Technology
2024/1
Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping
Nano Letters
2023/11/20
Machine Learning-Based Prediction of Atomic Layer Control for MoS2 via Reactive Ion Etcher
Applied Science and Convergence Technology
2023/9/30
Modulation of Contact Resistance of Dual‐Gated MoS2 FETs Using Fermi‐Level Pinning‐Free Antimony Semi‐Metal Contacts
Advanced Science
2023/7
Tien Dat Ngo
H-Index: 1
Tuyen Huynh
H-Index: 2
Jongwook Jeon
H-Index: 9
Min Sup Choi
H-Index: 15
Won Jong Yoo
H-Index: 31
Ambipolar charge-transfer graphene plasmonic cavities
Nature Materials
2023/3/30
Boosting hole migration through oxygen species–functionalized graphene interlayer for organic-based optoelectronic devices with enhanced efficiency and long-term durability
Applied Surface Science
2023/4/1
Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe2 FETs
Advanced Electronic Materials
2023/3
Atomically imprinted graphene plasmonic cavities
arXiv preprint arXiv:2206.12754
2022/6/26
Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects
2022/4
Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning
Journal of Materials Chemistry C
2022/1/21
Self‐Powered 2D MoS2/WOx/WSe2 Heterojunction Photodetector Realized by Oxygen Plasma Treatment
Advanced Materials Interfaces
2022/11
Recent progress in 1D contacts for 2D material-based devices
Advanced Materials
2022/9/28
Selective Electron Beam Patterning of Oxygen‐Doped WSe2 for Seamless Lateral Junction Transistors
Advanced Science
2022/9
Systems and methods for universal degenerate p-type doping with monolayer tungsten oxyselenide (TOS)
2021/10/21
Chemical Dopant‐Free Doping by Annealing and Electron Beam Irradiation on 2D Materials
Advanced Electronic Materials
2021/10/1
Author Correction: High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide (Nature Electronics,(2021), 4, 10,(731-739), 10.1038/s41928-021-00657-y)
Nature Electronics
2021/10
Min Sup Choi
H-Index: 15
Ankur Nipane
H-Index: 7
Ipshita Datta
H-Index: 6
Abhinandan Borah
H-Index: 6
Younghun Jung
H-Index: 13
Bumho Kim
H-Index: 8
Daniel Rhodes
H-Index: 5
Apoorv Jindal
H-Index: 3
Zachary A Lamport
H-Index: 7
Amirali Zangiabadi
H-Index: 10
Takashi Taniguchi
H-Index: 0
Ioannis Kymissis
H-Index: 34
Xiaoyang Zhu
H-Index: 62
Won Jong Yoo
H-Index: 31
Analytical Measurements of Contact Resistivity in Two-Dimensional WSe2 Field-Effect Transistors
2D Materials
2021/8/20
Inyong Moon
H-Index: 6
Min Sup Choi
H-Index: 15
Sungwon Lee
H-Index: 2
Ankur Nipane
H-Index: 7
Won Jong Yoo
H-Index: 31
Low-Resistance p-Type Ohmic Contacts to Ultrathin WSe2 by Using a Monolayer Dopant
ACS Applied Electronic Materials
2021/6/21