Min Ju Kim

Min Ju Kim

KAIST

H-index: 10

Asia-South Korea

About Min Ju Kim

Min Ju Kim, With an exceptional h-index of 10 and a recent h-index of 10 (since 2020), a distinguished researcher at KAIST, specializes in the field of organic electronics, CVD process, organic-inorganic hybrid materials, gate dielectric-stack, Memory device (ReRAM and Flash).

His recent articles reflect a diverse array of research interests and contributions to the field:

Ultrathin All‐Solid‐State MoS2‐Based Electrolyte Gated Synaptic Transistor with Tunable Organic–Inorganic Hybrid Film

Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration

A study on memory characteristics of hybrid-based charge trap-type organic non-volatile memory device according to gate stack thickness

The Effect of Alkyl Chain Length in Organic Semiconductor and Surface Polarity of Polymer Dielectrics in Organic Thin‐Film Transistors (OTFTs)

Ultralow-k Amorphous Boron Nitride Film for Copper Interconnect Capping Layer

A novel structured single device neuron for low standby power and compact system application

A non-invasive approach to the resistive switching physical model of ultra-thin organic–inorganic dielectric-based ReRAMs

Resistive Random Access Memory Behaviors in Organic–Inorganic Hybrid Ultra‐Thin Films

Min Ju Kim Information

University

Position

___

Citations(all)

265

Citations(since 2020)

249

Cited By

66

hIndex(all)

10

hIndex(since 2020)

10

i10Index(all)

10

i10Index(since 2020)

10

Email

University Profile Page

Google Scholar

Min Ju Kim Skills & Research Interests

organic electronics

CVD process

organic-inorganic hybrid materials

gate dielectric-stack

Memory device (ReRAM and Flash)

Top articles of Min Ju Kim

Ultrathin All‐Solid‐State MoS2‐Based Electrolyte Gated Synaptic Transistor with Tunable Organic–Inorganic Hybrid Film

Advanced Science

2024/4/2

Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration

IEEE Transactions on Electron Devices

2023/12/8

A study on memory characteristics of hybrid-based charge trap-type organic non-volatile memory device according to gate stack thickness

Microelectronics Reliability

2023/12/1

Min Ju Kim
Min Ju Kim

H-Index: 5

The Effect of Alkyl Chain Length in Organic Semiconductor and Surface Polarity of Polymer Dielectrics in Organic Thin‐Film Transistors (OTFTs)

Small Methods

2023/11

Ultralow-k Amorphous Boron Nitride Film for Copper Interconnect Capping Layer

IEEE Transactions on Electron Devices

2023/3/23

A novel structured single device neuron for low standby power and compact system application

IEEE Electron Device Letters

2023/2/3

A non-invasive approach to the resistive switching physical model of ultra-thin organic–inorganic dielectric-based ReRAMs

Nanoscale

2023

Byung Jin Cho
Byung Jin Cho

H-Index: 31

Min Ju Kim
Min Ju Kim

H-Index: 5

Resistive Random Access Memory Behaviors in Organic–Inorganic Hybrid Ultra‐Thin Films

Advanced Electronic Materials

2022/10

Grain Size Engineering Using Amorphous-Ge/Si Stack to Enhance Channel Mobility for NAND Flash Memory

IEEE Transactions on Electron Devices

2022/9/8

Channel mobility boosting in a poly-Si channel using Ge diffusion engineering and hydrogen plasma treatment

IEEE Electron Device Letters

2022/1/5

Vapor-phase synthesis of a reagent-free self-healing polymer film with rapid recovery of toughness at room temperature and under ambient conditions

Soft Matter

2022

Copolymer‐Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process

Advanced Electronic Materials

2021/10

Highly Reliable Charge Trap‐Type Organic Non‐Volatile Memory Device Using Advanced Band‐Engineered Organic‐Inorganic Hybrid Dielectric Stacks

Advanced Functional Materials

2021/10

An 8-nm-thick Sn-doped polycrystalline β-Ga2O3 MOSFET with a “normally off” operation

Applied Physics Letters

2021/9/20

Performance enhancement of p-type organic thin-film transistors by surface modification of hybrid dielectrics

Organic Electronics

2021/9/1

Hf‐and Ti‐Based Organic/Inorganic Hybrid Dielectrics Synthesized via Chemical Vapor Phase for Advanced Gate Stack in Flexible Electronic Devices

Advanced Electronic Materials

2021/4

Large‐Area, Conformal, and Uniform Synthesis of Hybrid Polymeric Film via Initiated Chemical Vapor Deposition

Macromolecular Materials and Engineering

2021/3

Method to Achieve the Morphotropic Phase Boundary in HfxZr1−xO2 by Electric Field Cycling for DRAM Cell Capacitor Applications

IEEE Electron Device Letters

2021/2/16

Capacitance boosting by anti-ferroelectric blocking layer in charge trap flash memory device

2020/12/12

Long‐term retention of low‐power, nonvolatile organic transistor memory based on ultrathin, trilayered dielectric containing charge trapping functionality

Advanced Functional Materials

2020/10/22

See List of Professors in Min Ju Kim University(KAIST)

Co-Authors

academic-engine