Matteo Cavalieri
École Polytechnique Fédérale de Lausanne
H-index: 12
Europe-Switzerland
Top articles of Matteo Cavalieri
Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse
IEEE Electron Device Letters
2023/2/27
Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer
IEEE Transactions on Electron Devices
2022/3/25
Matteo Cavalieri
H-Index: 6
Igor Stolichnov
H-Index: 19
Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures
npj 2D Materials and Applications
2021/9/7
Intrinsic switching in Si-doped HfO2: A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor
Applied Physics Letters
2021/5/10
Exploring ferroelectricity in HfO2-based thin films by tackling application-relevant challenges
2021
Matteo Cavalieri
H-Index: 6
Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1− xZrxO2-based structures
Applied Physics Letters
2020/10/26
Temperature dependence of reconfigurable bandstop filters using vanadium dioxide switches
Applied Physics Letters
2020/10/26
Matteo Cavalieri
H-Index: 6
Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process
ACS Applied Electronic Materials
2020/5/29
Matteo Cavalieri
H-Index: 6
Igor Stolichnov
H-Index: 19
WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake
npj 2D Materials and Applications
2020/4/30
Luca Capua
H-Index: 2
Matteo Cavalieri
H-Index: 6
Radio-frequency characteristics of Ge-doped vanadium dioxide thin films with increased transition temperature
ACS Applied Electronic Materials
2020/4/16
Nanowire tunnel FET with simultaneously reduced subthermionic subthreshold swing and off-current due to negative capacitance and voltage pinning effects
Nano letters
2020/4/15
An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction
IEEE Electron Device Letters
2020/2/17
Sadegh Kamaei
H-Index: 2
Farzan Jazaeri
H-Index: 18
Nicolo Oliva
H-Index: 5
Matteo Cavalieri
H-Index: 6
Benjamin Lambert
H-Index: 4
