Masashi Kato
Nagoya Institute of Technology
H-index: 17
Asia-Japan
Top articles of Masashi Kato
Effects of proton implantation into 4H-SiC substrate: Stacking faults in epilayer on the substrate
Materials Science in Semiconductor Processing
2024/6/1
Masashi Kato
H-Index: 11
Shunta Harada
H-Index: 14
Analysis of defects dominating carrier recombination in CeO2 single crystal for photocatalytic applications
Journal of Physics D: Applied Physics
2024/4/24
Masashi Kato
H-Index: 11
Photoelectrical characterization of heavily-doped p-SiC Schottky contacts
Japanese Journal of Applied Physics
2024/3/12
Masashi Kato
H-Index: 11
Mitigation of carrier trapping effects on carrier lifetime measurements with continuous-wave laser illumination for Pb-based metal halide perovskite materials
Journal of Applied Physics
2024/2/21
Masashi Kato
H-Index: 11
Surface recombination velocities for 4H–SiC: Dependence of excited carrier concentration and surface passivation
Materials Science in Semiconductor Processing
2024/2/1
Masashi Kato
H-Index: 11
Lei Han
H-Index: 2
Effect of dislocations on carrier recombination and photoelectrochemical activity in polished and unpolished TiO2 and SrTiO3 crystals
Journal of Applied Physics
2024/1/28
Mingxin Zhang
H-Index: 0
Masashi Kato
H-Index: 11
Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective
2024/1/15
Masashi Kato
H-Index: 11
Shunta Harada
H-Index: 14
Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions
Japanese Journal of Applied Physics
2024/1/10
Kazuhiro Tanaka
H-Index: 1
Masashi Kato
H-Index: 11
Unravelling material properties of halide perovskites by combined microwave photoconductivity and time-resolved photoluminescence spectroscopy
Journal of Materials Chemistry C
2024
Karen Forberich
H-Index: 31
Masashi Kato
H-Index: 11
Analysis of carrier recombination coefficients of 3C-and 6H-SiC: Insights into recombination mechanisms in stacking faults of 4H-SiC
AIP Advances
2023/8/1
Kazuhiro Tanaka
H-Index: 1
Masashi Kato
H-Index: 11
Development of an angle detection system for channeling implantation to the c-axis of SiC using birefringence phenomenon
Japanese Journal of Applied Physics
2023/6/22
Masashi Kato
H-Index: 11
Suppression of partial dislocation glide motion during contraction of stacking faults in SiC epitaxial layers by hydrogen ion implantation
Applied Physics Express
2023/1/23
Shunta Harada
H-Index: 14
Masashi Kato
H-Index: 11
Effects of ion implantation process on defect distribution in SiC SJ-MOSFET
Japanese Journal of Applied Physics
2023/1/25
Masashi Kato
H-Index: 11
4H-SiC Auger recombination coefficient under the high injection condition
Japanese Journal of Applied Physics
2023/1/10
Kazuhiro Tanaka
H-Index: 1
Masashi Kato
H-Index: 11
Mechanochemical Synthesis of Cesium Titanium Halide Perovskites Cs2TiBr6‐xIx (x = 0, 2, 4, 6)
Crystal Research and Technology
2023/1
Masashi Kato
H-Index: 11
Analysis of carrier lifetime in a drift layer of 1.2-kV class 4H–SiC devices toward complete suppression of bipolar degradation
Materials Science in Semiconductor Processing
2023/1/1
Shunta Harada
H-Index: 14
Masashi Kato
H-Index: 11
Vascular endothelium as a target tissue for short-term exposure to low-frequency noise that increases cutaneous blood flow
Science of the Total Environment
2022/12/10
Surface recombination velocities for the (100) and (001) crystal faces of bismuth vanadate single crystals
Journal of Physics D: Applied Physics
2022/12/8
Masashi Kato
H-Index: 11
Characterization of defect structure in epilayer grown on on-axis sic by synchrotron X-ray topography
Journal of Electronic Materials
2022/4
Masashi Kato
H-Index: 11
Trapping effects and surface/interface recombination of carrier recombination in single-or poly-crystalline metal halide perovskites
Japanese Journal of Applied Physics
2022/11/22
Masashi Kato
H-Index: 11
