Marek Skowronski
Carnegie Mellon University
H-index: 57
North America-United States
Top articles of Marek Skowronski
Precise Final Thinning by Concentrated Ar Ion Beam Milling of Plan View TEM Specimens from Phase Change Memory Device Prepared in Xe Plasma FIB
2023/11/12
Electrical conductivity of TaOx as function of composition and temperature
Journal of Non-Crystalline Solids
2023/10/1
Marek Skowronski
H-Index: 25
Temperature Distribution in TaOx Resistive Switching Devices Assessed In Operando by Scanning Thermal Microscopy
ACS Applied Electronic Materials
2023/4/10
Marek Skowronski
H-Index: 25
Material instabilities in the TaOx-based resistive switching devices
2023/3/26
Marek Skowronski
H-Index: 25
Growth dominated crystallization of GeTe mushroom cells during partial SET operation
Journal of Applied Physics
2023/1/28
Marek Skowronski
H-Index: 25
Observation and modelling of homogenous nucleation in Ge 2 Sb 2 Te 5 mushroom cells during SET operation
Journal of Materials Chemistry C
2023
Marek Skowronski
H-Index: 25
Density of amorphous sputtered Ge2Sb2Te5 thin films
AIP Advances
2023/1/1
Segregation-induced Ge precipitation in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 line cells
AIP Advances
2022/6/1
Marek Skowronski
H-Index: 25
Modeling of the Thermodiffusion-Induced Filament Formation in Resistive-Switching Devices
Physical Review Applied
2022/5/24
Marek Skowronski
H-Index: 25
Simulation of lateral ion migration during electroforming process
arXiv preprint arXiv:2111.06215
2021/11/11
Marek Skowronski
H-Index: 25
Evolution of the conductive filament with cycling in TaOx-based resistive switching devices
Journal of Applied Physics
2020/11/21
Liting Shen
H-Index: 1
Marek Skowronski
H-Index: 25
Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation
Journal of Applied Physics
2020/6/21
Bingyuan Zhao
H-Index: 2
Marek Skowronski
H-Index: 25
Exchange of Ions across the TiN/TaOx Interface during Electroformation of TaOx-Based Resistive Switching Devices
ACS applied materials & interfaces
2020/5/22
Marek Skowronski
H-Index: 25
Nanoscale density variations in sputtered amorphous TaOx functional layers in resistive switching devices
Journal of Applied Physics
2020/2/7
Marek Skowronski
H-Index: 25
Electrical and Thermal Dynamics of Self-Oscillations in TaOx-Based Threshold Switching Devices
ACS Applied Electronic Materials
2020/2/3
Bingyuan Zhao
H-Index: 2
Marek Skowronski
H-Index: 25
