Long ZHANG
Southeast University
H-index: 15
Asia-China
Top articles of Long ZHANG
0.18 µm 200V SOI-BCD Technology with Ultra-Low Specific On-Resistance LDMOS for Automotive Application
2023/5/28
Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures
IEEE Transactions on Power Electronics
2023/4/10
Physics Based SPICE Modeling of Dynamic On-state Resistance of p-GaN HEMTs
IEEE Transactions on Power Electronics
2023/3/29
A silicon-on-insulator lateral IGBT with segmented trenches for improving short-circuit withstanding capability
IEEE Transactions on Electron Devices
2022/5/27
Unclamped-inductive-switching behaviors of p-GaN HEMTs at cryogenic temperature
IEEE Transactions on Power Electronics
2022/5/10
A 400-V Half Bridge Gate Driver for Normally-Off GaN HEMTs With Effective Dv/Dt Control and High Dv/Dt Immunity
IEEE Transactions on Industrial Electronics
2022/3/1
41% Reduction In Power Stage Area On Silicon-On-Insulator Bipolar-CMOS-DMOS-IGBT Platform With Newly Developed Multiple Deep-Oxide Trench Technology
2022/12/3
Silicon-on-insulator lateral DMOS with potential modulation plates and multiple deep-oxide trenches
IEEE Transactions on Electron Devices
2021/9/1
Simulation Study of Novel Trench Gate U-Shaped Channel SOI Lateral IGBTs With Suppressed Gate Voltage Overshoot and Reduced di/dt
IEEE Transactions on Electron Devices
2021/6/9
Low on-resistance SOI-LDMOS with mobility-enhancing auxiliary cell
2021/5/30
Simulation study of A 1200V 4H-SiC lateral MOSFET with reduced saturation current
IEEE Electron Device Letters
2021/5/25
Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT
Solid-State Electronics
2021/1/1
A self-adaptive pulse generator to realize extremely low power consumption and high reliability of high voltage gate driver IC
Analog Integrated Circuits and Signal Processing
2020/10
A dVS/dt Noise Immunity Improvement Structure Based on Slope Sensing Technology for 200V High Voltage Gate Drive Circuit
2020/9/13
Experimental investigation on the electrical properties of SOI-LIGBT under total-ionizing-dose radiation
2020/9/13
Super field plate technique that can provide charge balance effect for lateral power devices without occupying drift region
IEEE Transactions on Electron Devices
2020/4/6
Analysis of OFF-state dynamic avalanche instability in silicon-on-insulator lateral IGBTs at low temperature
Microelectronics Reliability
2020/4/1
A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications
IEEE Transactions on Power Electronics
2020/2/5
Study and implementation of 600-V high-voltage gate driver IC with the common-mode dual-interlock technique for GaN devices
IEEE Transactions on Industrial Electronics
2020/2/5
High‐temperature electrical performances and physics‐based analysis of p‐GaN HEMT device
IET Power Electronics
2020/2
Co-Authors
