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Ling Xia

Ling Xia

Massachusetts Institute of Technology

H-index: 11

North America-United States

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About Ling Xia

Ling Xia, With an exceptional h-index of 11 and a recent h-index of 8 (since 2020), a distinguished researcher at Massachusetts Institute of Technology, specializes in the field of Semiconductor, Strain/Stress effects, InGaAs, GaN.

His recent articles reflect a diverse array of research interests and contributions to the field:

Reverse Current Stress Induced Dynamic Ron of GaN HEMTs in Soft-switching Mode

Study on the Dynamic Ron Degradation in GaN-based Power HEMT

Dynamic Ron Effect in GaN HEMT in a Zero-Voltage-Switching Circuit Due to Off-Resonance Operation

Mechanism of wireless power transfer system waveform distortion caused by nonideal gallium nitride transistor characteristics

Reverse Conduction Induced Dynamic Effect in GaN HEMT with p-GaN Gate

Impact of E‐Mode Gallium Nitride High Electron Mobility Transistor with P‐Type Gate on Waveform Distortion in an AirFuel Wireless Power Transfer System

Transistor structure having buried island regions

Ling Xia Information

University

Position

___

Citations(all)

496

Citations(since 2020)

195

Cited By

359

hIndex(all)

11

hIndex(since 2020)

8

i10Index(all)

13

i10Index(since 2020)

7

Email

University Profile Page

Google Scholar

Ling Xia Skills & Research Interests

Semiconductor

Strain/Stress effects

InGaAs

GaN

Top articles of Ling Xia

Reverse Current Stress Induced Dynamic Ron of GaN HEMTs in Soft-switching Mode

IEEE Electron Device Letters

2023/7/13

Xu Du
Xu Du

H-Index: 17

Ling Xia
Ling Xia

H-Index: 7

Study on the Dynamic Ron Degradation in GaN-based Power HEMT

2022/5/13

Ling Xia
Ling Xia

H-Index: 7

Dynamic Ron Effect in GaN HEMT in a Zero-Voltage-Switching Circuit Due to Off-Resonance Operation

IEEE Journal of the Electron Devices Society

2021/7/26

Ling Xia
Ling Xia

H-Index: 7

Mechanism of wireless power transfer system waveform distortion caused by nonideal gallium nitride transistor characteristics

Chinese Journal of Electrical Engineering

2021/6

Jianshan Zhang
Jianshan Zhang

H-Index: 2

Ling Xia
Ling Xia

H-Index: 7

Reverse Conduction Induced Dynamic Effect in GaN HEMT with p-GaN Gate

2021/4/8

Ling Xia
Ling Xia

H-Index: 7

Impact of E‐Mode Gallium Nitride High Electron Mobility Transistor with P‐Type Gate on Waveform Distortion in an AirFuel Wireless Power Transfer System

physica status solidi (a)

2021/2

Jianshan Zhang
Jianshan Zhang

H-Index: 2

Ling Xia
Ling Xia

H-Index: 7

Transistor structure having buried island regions

2020/2/18

See List of Professors in Ling Xia University(Massachusetts Institute of Technology)