Johannes Aberl
Johannes Kepler Universität Linz
H-index: 10
Europe-Austria
Top articles of Johannes Aberl
All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy
arXiv preprint arXiv:2402.19227
2024/2/29
A Runtime Reconfigurable Ge Field-Effect Transistor With Symmetric On-States
IEEE Journal of the Electron Devices Society
2024/1/5
Ultrathin Germanium and Silicon-Germanium Nanosheet Transistors for Runtime Reconfigurable Electronics
2023/10/22
In situ TEM heating experiments on thin epitaxial GeSn layers: Modes of phase separation
APL Materials
2023/10/1
Single SiGe quantum dot emission deterministically enhanced in a high-Q photonic crystal resonator
Optics Express
2023/5/8
Reconfigurable Field-Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts
2023/5/29
Strain-induced dynamic control over the population of quantum emitters in two-dimensional materials
arXiv preprint arXiv:2301.10273
2023/1/24
Single SiGe Quantum Dot Coupled to Bichromatic Photonic Crystal Cavities for Potential Applications as Single Telecom Photon Emitters
Optics, Photonics and Lasers
2022/5/18
Advanced preparation of plan-view specimens on a MEMS chip for in situ TEM heating experiments
MRS bulletin
2022/4
Relaxation delay of Ge‐rich epitaxial SiGe films on Si (001)
physica status solidi (a)
2022
Epitaxial growth of planar hutwires on silicon‐on‐insulator substrates
physica status solidi (a)
2022
Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots
Scientific Reports
2021/10/18
Advanced hydrogenation process applied on Ge on Si quantum dots for enhanced light emission
Applied Physics Letters
2021/2/22
Lukas Spindlberger
H-Index: 5
Johannes Aberl
H-Index: 5
Friedrich Schäffler
H-Index: 22
Moritz Brehm
H-Index: 15
In-situ annealing and hydrogen irradiation of defect-enhanced germanium quantum dot light sources on silicon
Crystals
2020/4/29