Jingsi Qiao

About Jingsi Qiao

Jingsi Qiao, With an exceptional h-index of 22 and a recent h-index of 22 (since 2020), a distinguished researcher at Renmin University of China,

His recent articles reflect a diverse array of research interests and contributions to the field:

Selective Formation of Homochiral Dimers by Intermolecular Charge Transfer on a hBN Nanomesh

Atomically engineering metal vacancies in monolayer transition metal dichalcogenides

Atomic tracking of thermally‐driven structural evolution in 2D crystals: Case of NbSe2

A Universal Strategy for Synthesis of 2D Ternary Transition Metal Phosphorous Chalcogenides

2D semimetal with ultrahigh work function for sub-0.1 V threshold voltage operation of metal-semiconductor field-effect transistors

Improving the band alignment at PtSe2 grain boundaries with selective adsorption of TCNQ

Unveiling electronic behaviors in heterochiral charge-density-wave twisted stacking materials with 1.25 nm unit dependence

Ultralow contact resistance in organic transistors via orbital hybridization

Jingsi Qiao Information

University

Position

Department of Physics

Citations(all)

7433

Citations(since 2020)

5121

Cited By

4730

hIndex(all)

22

hIndex(since 2020)

22

i10Index(all)

31

i10Index(since 2020)

28

Email

University Profile Page

Google Scholar

Top articles of Jingsi Qiao

Selective Formation of Homochiral Dimers by Intermolecular Charge Transfer on a hBN Nanomesh

ACS nano

2024/4/25

Atomically engineering metal vacancies in monolayer transition metal dichalcogenides

Nature Synthesis

2024/3/7

Atomic tracking of thermally‐driven structural evolution in 2D crystals: Case of NbSe2

InfoMat

2024/2

2D semimetal with ultrahigh work function for sub-0.1 V threshold voltage operation of metal-semiconductor field-effect transistors

Materials & Design

2023/7/1

Improving the band alignment at PtSe2 grain boundaries with selective adsorption of TCNQ

Nano Research

2023/2

Unveiling electronic behaviors in heterochiral charge-density-wave twisted stacking materials with 1.25 nm unit dependence

ACS nano

2023/1/20

Intralayer Negative Poisson's Ratio in 2D Black Arsenic by Strain Engineering

Small Structures

2023/12

Exotic electronic states in gradient-strained untwisted graphene bilayers

arXiv preprint arXiv:2311.17615

2023/11/29

Intralayer Negative Poisson's Ratio in Two-Dimensional Black Arsenic by Strain Engineering

arXiv preprint arXiv:2309.04058

2023/9/8

Layer Sliding And Twisting Induced Electronic Transitions In Correlated Magnetic 1t‐Nbse2 Bilayers

Advanced Functional Materials

2023/9

Discovery and construction of surface kagome electronic states induced by p-d electronic hybridization in Co3Sn2S2

Nature Communications

2023/8/26

A “Click” Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance

ACS nano

2022/12/1

Strain Effect on Air-Stability of Monolayer CrSe2

arXiv preprint arXiv:2204.01400

2022/4/4

Aggregation‐Dependent Dielectric Permittivity in 2D Molecular Crystals

Small Methods

2022/4

Size Dependence of Charge-Density-Wave Orders in Single-Layer NbSe2 Hetero/Homophase Junctions

The Journal of Physical Chemistry Letters

2022/2/18

Strong Moiré excitons in high-angle twisted transition metal dichalcogenide homobilayers with robust commensuration

Nano Letters

2021/12/20

Visualizing spatial evolution of electron-correlated interface in two-dimensional heterostructures

ACS nano

2021/10/4

See List of Professors in Jingsi Qiao University(Renmin University of China)