Jeongmin Hong
Huazhong University of Science and Technology
H-index: 22
Asia-China
Top articles of Jeongmin Hong
Room temperature photosensitive ferromagnetic semiconductor using MoS2
npj Spintronics
2024/4/5
An energy efficient way for quantitative magnetization switching
2024/2/15
Energy Efficient All-Electric-Field-Controlled Multiferroic Magnetic Domain-Wall Logic
Nano Letters
2023/7/19
Field-Free Current-Induced Switching of L10- Using Interlayer Exchange Coupling for Neuromorphic Computing
Physical Review Applied
2023/2/13
Zhe Guo
H-Index: 3
Chao Sun
H-Index: 13
Shuai Zhang
H-Index: 25
Jeongmin Hong
H-Index: 15
Long You
H-Index: 19
Nanoprobe Based Information Processing: Nanoprobe‐Electronics
Advanced Physics Research
2024/2
Long You
H-Index: 19
Jeongmin Hong
H-Index: 15
In‐Memory Mathematical Operations with Spin‐Orbit Torque Devices
Advanced Science
2022/9
Nanoscale three-dimensional magnetic sensing with a probabilistic nanomagnet driven by spin-orbit torque
arXiv preprint arXiv:2208.08074
2022/8/17
A three-dimensional magnetic field sensor based on a single spin–orbit-torque device via domain nucleation
Applied Physics Letters
2022/6/6
Reconfigurable physical unclonable cryptographic primitives based on current-induced nanomagnets switching
Science China Information Sciences
2022/2
Magnetically controlled crystallographic properties of graphite sheets with self-assembled periodic arrays of magnetoelectric nanoparticles
Applied Surface Science
2022/1/30
Rakesh Guduru
H-Index: 1
Ping Wang
H-Index: 3
Bassim Arkook
H-Index: 4
Jeongmin Hong
H-Index: 15
Sakhrat Khizroev
H-Index: 18
Controlled nano-cracking actuated by an in-plane voltage
Science China Information Sciences
2021/8
Ferroelectric‐Nanocrack Switches for Memory and Complementary Logic with Zero Off‐current and Low Operating Voltage
Advanced Electronic Materials
2021/6
Tunable Random Number Generators Implemented by Spin-Orbit Torque Driven Stochastic Switching of a Nanomagnet for Probabilistic Spin Logic
2021/4/8
A spin–orbit torque device for sensing three-dimensional magnetic fields
Nature Electronics
2021/3
Reconfigurable Physical Unclonable Function Based on Spin-Orbit Torque Induced Chiral Domain Wall Motion
IEEE Electron Device Letters
2021/2/8
Integrator based on current-controlled magnetic domain wall
Applied Physics Letters
2021/2/1
Low-energy complementary ferroelectric-nanocrack logic
Nano Energy
2020/9/1
The effect of insertion layer on the perpendicular magnetic anisotropy and its electric-field-induced change at Fe/MgO interface: a first-principles investigation
Journal of Physics: Condensed Matter
2020/8/17
Voltage-controlled magnetic anisotropy in antiferromagnetic L10-MnPt and MnPd thin films
Journal of Magnetism and Magnetic Materials
2020/7/1
Spin–orbit torque-based reconfigurable physically unclonable functions
Applied Physics Letters
2020/5/11