Inyong Moon

About Inyong Moon

Inyong Moon, With an exceptional h-index of 13 and a recent h-index of 11 (since 2020), a distinguished researcher at Sungkyunkwan University, specializes in the field of 2D material semiconductor.

His recent articles reflect a diverse array of research interests and contributions to the field:

Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping

Contact Resistivity in Edge‐Contacted Graphene Field Effect Transistors

Analytical measurements of contact resistivity in two-dimensional WSe2 field-effect transistors

Fermi‐level pinning free high‐performance 2D CMOS inverter fabricated with van der Waals bottom contacts

Control of the Schottky Barrier and Contact Resistance at Metal–WSe2 Interfaces by Polymeric Doping

Gate-Modulated Ultrasensitive Visible and Near-Infrared Photodetection of Oxygen Plasma-Treated WSe2 Lateral pn-Homojunctions

Contact Doped Multi-layer Tungsten Diselenide Field Effect Transistors

High‐Electric‐Field‐Induced Phase Transition and Electrical Breakdown of MoTe2

Inyong Moon Information

University

Position

___

Citations(all)

1340

Citations(since 2020)

1171

Cited By

567

hIndex(all)

13

hIndex(since 2020)

11

i10Index(all)

14

i10Index(since 2020)

11

Email

University Profile Page

Google Scholar

Inyong Moon Skills & Research Interests

2D material semiconductor

Top articles of Inyong Moon

Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping

Nano Letters

2023/11/20

Contact Resistivity in Edge‐Contacted Graphene Field Effect Transistors

Advanced Electronic Materials

2022

Analytical measurements of contact resistivity in two-dimensional WSe2 field-effect transistors

2D Materials

2021/8/20

Fermi‐level pinning free high‐performance 2D CMOS inverter fabricated with van der Waals bottom contacts

Advanced Electronic Materials

2021/5

Control of the Schottky Barrier and Contact Resistance at Metal–WSe2 Interfaces by Polymeric Doping

Advanced Electronic Materials

2020/10

Gate-Modulated Ultrasensitive Visible and Near-Infrared Photodetection of Oxygen Plasma-Treated WSe2 Lateral pn-Homojunctions

ACS applied materials & interfaces

2020/4/29

Contact Doped Multi-layer Tungsten Diselenide Field Effect Transistors

Bulletin of the American Physical Society

2020/3/4

High‐Electric‐Field‐Induced Phase Transition and Electrical Breakdown of MoTe2

Advanced Electronic Materials

2020/3

Contact Oxidized Few layer p-type WSe2 Field Effect Transistors

한국진공학회 학술발표회초록집

2020/2

Effect of large work function modulation of MoS 2 by controllable chlorine doping using a remote plasma

Journal of Materials Chemistry C

2020

See List of Professors in Inyong Moon University(Sungkyunkwan University)

Co-Authors

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