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I-Ting Wang

About I-Ting Wang

I-Ting Wang, With an exceptional h-index of 18 and a recent h-index of 16 (since 2020), a distinguished researcher at National Chiao Tung University, specializes in the field of Nanoelectronics, Memristor, RRAM.

His recent articles reflect a diverse array of research interests and contributions to the field:

Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric HfZrO: Interfacial Layer Soft Breakdown and Physical Modeling

Two-transistor metal-ferroelectric-metal field-effect transistor (2T-MFMFET) for scalable embedded nonvolatile memory—Part I: Compact modeling

Guideline of Device Optimization for Ferroelectric InGaZnO Transistor

Wake-Up of Ultrathin Ferroelectric Hf0.5Zr0.5O2: The Origin and Physical Modeling

Stochastic switching in a magnetic-tunnel-junction neuron and a bias-dependent neel-arrhenius model

Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf0.5 Zr0.5 O2 and optimized Programming Strategies

Performance enhancement and transient current response of ferroelectric tunnel junction: A theoretical study

Giant Photoresponsivity and External Quantum Efficiency in a Contact‐Engineered Broadband a‐IGZO Phototransistor

I-Ting Wang Information

University

Position

Department of Electronics Engineering

Citations(all)

1621

Citations(since 2020)

1106

Cited By

954

hIndex(all)

18

hIndex(since 2020)

16

i10Index(all)

21

i10Index(since 2020)

19

Email

University Profile Page

Google Scholar

I-Ting Wang Skills & Research Interests

Nanoelectronics

Memristor

RRAM

Top articles of I-Ting Wang

Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric HfZrO: Interfacial Layer Soft Breakdown and Physical Modeling

IEEE TRANSACTIONS ON ELECTRON DEVICES

2024/3/29

Sourav De
Sourav De

H-Index: 5

Yu-Sheng Chen
Yu-Sheng Chen

H-Index: 2

Po-Chun Yeh
Po-Chun Yeh

H-Index: 10

Two-transistor metal-ferroelectric-metal field-effect transistor (2T-MFMFET) for scalable embedded nonvolatile memory—Part I: Compact modeling

IEEE Transactions on Electron Devices

2023/9/26

Hsin-Hui Huang
Hsin-Hui Huang

H-Index: 2

I-Ting Wang
I-Ting Wang

H-Index: 13

Guideline of Device Optimization for Ferroelectric InGaZnO Transistor

2023/3/7

I-Ting Wang
I-Ting Wang

H-Index: 13

Wake-Up of Ultrathin Ferroelectric Hf0.5Zr0.5O2: The Origin and Physical Modeling

2023/12/9

I-Ting Wang
I-Ting Wang

H-Index: 13

Yu-Sheng Chen
Yu-Sheng Chen

H-Index: 2

Po-Chun Yeh
Po-Chun Yeh

H-Index: 10

Stochastic switching in a magnetic-tunnel-junction neuron and a bias-dependent neel-arrhenius model

Physical Review Applied

2022/12/13

I-Ting Wang
I-Ting Wang

H-Index: 13

Kuan-Ming Chen
Kuan-Ming Chen

H-Index: 1

Yuan-Chieh Tseng
Yuan-Chieh Tseng

H-Index: 12

Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf0.5 Zr0.5 O2 and optimized Programming Strategies

2022/12/3

Hsin-Hui Huang
Hsin-Hui Huang

H-Index: 2

I-Ting Wang
I-Ting Wang

H-Index: 13

Po-Chun Yeh
Po-Chun Yeh

H-Index: 10

Performance enhancement and transient current response of ferroelectric tunnel junction: A theoretical study

IEEE Transactions on Electron Devices

2022/6/24

Hsin-Hui Huang
Hsin-Hui Huang

H-Index: 2

I-Ting Wang
I-Ting Wang

H-Index: 13

Giant Photoresponsivity and External Quantum Efficiency in a Contact‐Engineered Broadband a‐IGZO Phototransistor

Advanced Functional Materials

2022/6

Voltage–Time Transformation Model for Threshold Switching Spiking Neuron Based on Nucleation Theory

Frontiers in Neuroscience

2022/4/13

I-Ting Wang
I-Ting Wang

H-Index: 13

Two-dimensional materials for artificial synapses: toward a practical application

2022/3/29

I-Ting Wang
I-Ting Wang

H-Index: 13

Chih-Cheng Chang
Chih-Cheng Chang

H-Index: 7

Yen-Yu Chen
Yen-Yu Chen

H-Index: 2

Device quantization policy in variation-aware in-memory computing design

Scientific reports

2022/1/7

Chih-Cheng Chang
Chih-Cheng Chang

H-Index: 7

I-Ting Wang
I-Ting Wang

H-Index: 13

In-memory annealing unit (IMAU): energy-efficient (2000 TOPS/W) combinatorial optimizer for solving travelling salesman problem

2021/12/11

Po-An Chen
Po-An Chen

H-Index: 6

I-Ting Wang
I-Ting Wang

H-Index: 13

Chih-I Wu
Chih-I Wu

H-Index: 35

Strategy of Mitigating Breakdown Interference and Yield Loss in Crossbar Memory

IEEE Transactions on Electron Devices

2021/10/19

I-Ting Wang
I-Ting Wang

H-Index: 13

Hsin-Hui Huang
Hsin-Hui Huang

H-Index: 2

Boris Hudec
Boris Hudec

H-Index: 12

Chih-Cheng Chang
Chih-Cheng Chang

H-Index: 7

Po-Tsun Liu
Po-Tsun Liu

H-Index: 20

Device Quantization Policy and Power-Performance-Area Co-Optimization Strategy in Variation-Aware In-memory Computing Design

2021/8/3

Chih-Cheng Chang
Chih-Cheng Chang

H-Index: 7

I-Ting Wang
I-Ting Wang

H-Index: 13

Progress and benchmark of spiking neuron devices and circuits

2021/8

Fu-Xiang Liang
Fu-Xiang Liang

H-Index: 2

I-Ting Wang
I-Ting Wang

H-Index: 13

Spectral imaging and spectral LIDAR systems: moving toward compact nanophotonics-based sensing

2021/3/16

I-Ting Wang
I-Ting Wang

H-Index: 13

Yao Zhu
Yao Zhu

H-Index: 2

See List of Professors in I-Ting Wang University(National Chiao Tung University)

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