Hardhyan Sheoran
Indian Institute of Technology Delhi
H-index: 6
Asia-India
Top articles of Hardhyan Sheoran
Study of electrical characteristics of high quality Pt SBDs fabricated on HVPE-Grown β-Ga2O3 epilayers in a wide temperature range (80–525 K)
Materials Science in Semiconductor Processing
2023/10/1
Hardhyan Sheoran
H-Index: 1
Rajendra Singh
H-Index: 25
Investigation of High Performance Schottky Diodes on Ga2O3 Epilayer using Cu with High Barrier Height, High Temperature Stability and Repeatability
Journal of Physics D: Applied Physics
2023/6/20
Hardhyan Sheoran
H-Index: 1
Rajendra Singh
H-Index: 25
Synthesis of a large area ReS 2 thin film by CVD for in-depth investigation of resistive switching: effects of metal electrodes, channel width and noise behaviour
Nanoscale
2023
High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga2O3-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature …
ACS Applied Materials & Interfaces
2022/11/8
Electrical Characteristics and Defect Dynamics Induced by Swift Heavy Ion Irradiation in Pt/PtO/-Ga₂O₃ Vertical Schottky Barrier Diodes
IEEE Transactions on Electron Devices
2022/9/30
Hardhyan Sheoran
H-Index: 1
Review of Radiation-Induced Effects on β-Ga2O3 Materials and Devices
2022/7/21
Hardhyan Sheoran
H-Index: 1
Rajendra Singh
H-Index: 25
Investigation of a vertical 2D/3D semiconductor heterostructure based on GaSe and Ga2O3
Journal of Physics D: Applied Physics
2022/6/28
A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications
ACS Applied Electronic Materials
2022/6/6
Deep-ultraviolet photodetectors based on hexagonal boron nitride nanosheets enhanced by localized surface plasmon resonance in Al nanoparticles
ACS Applied Nano Materials
2022/5/19
Rapidly responding room temperature NO2 gas sensor based on SnSe nanostructured film
Materials Today Communications
2022/3/1
Manoj Kumar
H-Index: 5
Hardhyan Sheoran
H-Index: 1
Exploring current conduction mechanisms in 6 MeV ion irradiated Au/SiO2/beta-Ga2O3 metal-oxide-semiconductor devices
2020/11/26
Hardhyan Sheoran
H-Index: 1
Temperature-dependent electrical characteristics of Ni/Au vertical Schottky barrier diodes on β-Ga2O3 epilayers
Physica B: Condensed Matter
2018/9/7
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