Giorgos Fagas

About Giorgos Fagas

Giorgos Fagas, With an exceptional h-index of 28 and a recent h-index of 15 (since 2020), a distinguished researcher at University College Cork, specializes in the field of electronic transport, nanowires, molecular electronics, disordered systems, device simulations.

His recent articles reflect a diverse array of research interests and contributions to the field:

Hybrid chips to enable a sustainable internet of things technology: opportunities and challenges

Effect of Metal Coupling on Schottky Barrier Height Extraction

Electron beam lithography and dimensional metrology for fin and nanowire devices on Ge, SiGe and GeOI substrates

Switching limits of top-gated carbon nanotube field-effect transistors

Impact of metal hybridization on contact resistance and leakage current of carbon nanotube transistors

The potential and global outlook of integrated photonics for quantum technologies

A Sub-kBT/q Dirac-source Graphene Nanoribbon Field-effect Transistor

ASCENT+ European Infrastructure for Nanoelectronics: a Deep Dive to All-GaN IC Technology for Power Electronics

Giorgos Fagas Information

University

Position

Tyndall National Institute

Citations(all)

2877

Citations(since 2020)

849

Cited By

2313

hIndex(all)

28

hIndex(since 2020)

15

i10Index(all)

49

i10Index(since 2020)

24

Email

University Profile Page

Google Scholar

Giorgos Fagas Skills & Research Interests

electronic transport

nanowires

molecular electronics

disordered systems

device simulations

Top articles of Giorgos Fagas

Hybrid chips to enable a sustainable internet of things technology: opportunities and challenges

2024/2/21

Giorgos Fagas
Giorgos Fagas

H-Index: 15

Rodrigo Martins
Rodrigo Martins

H-Index: 9

Effect of Metal Coupling on Schottky Barrier Height Extraction

2023/9/27

Thomas Kelly
Thomas Kelly

H-Index: 16

Giorgos Fagas
Giorgos Fagas

H-Index: 15

Electron beam lithography and dimensional metrology for fin and nanowire devices on Ge, SiGe and GeOI substrates

Microelectronic Engineering

2023/8/15

Switching limits of top-gated carbon nanotube field-effect transistors

Solid-State Electronics

2023/4/1

Impact of metal hybridization on contact resistance and leakage current of carbon nanotube transistors

IEEE Electron Device Letters

2022/6/24

Thomas Kelly
Thomas Kelly

H-Index: 16

Giorgos Fagas
Giorgos Fagas

H-Index: 15

A Sub-kBT/q Dirac-source Graphene Nanoribbon Field-effect Transistor

2021/9/27

ASCENT+ European Infrastructure for Nanoelectronics: a Deep Dive to All-GaN IC Technology for Power Electronics

2021/6/24

Giorgos Fagas
Giorgos Fagas

H-Index: 15

Top-Gated Carbon Nanotube FETs from Quantum Simulations: Comparison with Experiments

2021/4/19

Thomas Kelly
Thomas Kelly

H-Index: 16

Giorgos Fagas
Giorgos Fagas

H-Index: 15

ASCENT plus European Infrastructure for Nanoelectronics: a Deep Dive to All-GaN IC Technology for Power Electronics Extended abstract

2021

Giorgos Fagas
Giorgos Fagas

H-Index: 15

Semi-metal tunnel field effect transistor

2020/5/19

See List of Professors in Giorgos Fagas University(University College Cork)

Co-Authors

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