Clarence Chan
University of Illinois at Urbana-Champaign
H-index: 6
North America-United States
Top articles of Clarence Chan
Plasma‐Damage Free Efficiency Scaling of Micro‐LEDs by Metal‐Assisted Chemical Etching
Advanced Optical Materials
2024
Demystifying metal-assisted chemical etching of III-N materials and multi-heterojunctions: fundamentals to optoelectronic applications
2023/12/1
Light emitting diode (led) structures for a microled device, and method for producing an array of led structures
2023/10/5
Temperature dependent characteristics of β-Ga2O3 FinFETs by MacEtch
Applied Physics Letters
2023/7/24
-Ga2O3 FinFETs by MacEtch: temperature dependent I-V characteristics
2023/6/25
Zhongjie Ren
H-Index: 6
Hsien-Chih Huang
H-Index: 2
Clarence Chan
H-Index: 3
Wenjuan Zhu
H-Index: 25
Xiuling Li
H-Index: 38
Publisher's Note:“Programmable vapor-phase metal-assisted chemical etching for versatile high-aspect ratio silicon nanomanufacturing”[Appl. Phys. Rev. 10, 011409 (2023)]
Applied Physics Reviews
2023/6/3
Clarence Chan
H-Index: 3
Xiuling Li
H-Index: 38
Programmable vapor-phase metal-assisted chemical etching for versatile high-aspect ratio silicon nanomanufacturing
Applied Physics Reviews
2023/3/13
Clarence Chan
H-Index: 3
Xiuling Li
H-Index: 38
Journal Highlights
MRS BULLETIN
2020/11
Wet etch, dry etch, and MacEtch of β-Ga2O3: A review of characteristics and mechanism
2021/12/1
Homoepitaxial GaN micropillar array by plasma-free photo-enhanced metal-assisted chemical etching
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
2021/9/31
Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching
Advanced Functional Materials
2021/8
(Invited) SiC and GaN High Aspect Ratio Nanostructures By Plasma-Free Photo-Assisted Inverse-Macetch
Electrochemical Society Meeting Abstracts prime2020
2020/11/23
Co-Authors
