Byoung Don Kong

About Byoung Don Kong

Byoung Don Kong, With an exceptional h-index of 13 and a recent h-index of 9 (since 2020), a distinguished researcher at Pohang University of Science and Technology, specializes in the field of Condensed Matter Physics, Low Dimensional Materials, Density Functional Theory, Device Physics, Electromagnetic Simulation.

His recent articles reflect a diverse array of research interests and contributions to the field:

Effect of Quasi-One-Dimensional Properties on Source/Drain Contacts in Vertical Nanowire Field-Effect Transistors (VNWFETs)

SUBSTRATE FOR SURFACE ACOUSTIC WAVE DEVICE AND SURFACE ACOUSTIC WAVE DEVICE COMPRISING THE SAME

Enhanced thermoelectric figure of merit in highly-doped silicon nanowires via a corrugated surface modulation

Fluoride ion and hydrofluoric acid detection via silicon nanosheet field-effect transistor sensor

Hydrogen Fluoride Gas Sensor by Silicon Nanosheet Field-Effect Transistor

Memory device including double PN junctions and driving method thereof, and capacitor-less memory device including double PN junctions and control gates and operation method …

Analytic bond order potential for indium gallium zinc oxide

mm-band surface acoustic wave devices utilizing two-dimensional boron nitride

Byoung Don Kong Information

University

Position

(POSTECH)

Citations(all)

774

Citations(since 2020)

332

Cited By

633

hIndex(all)

13

hIndex(since 2020)

9

i10Index(all)

13

i10Index(since 2020)

9

Email

University Profile Page

Google Scholar

Byoung Don Kong Skills & Research Interests

Condensed Matter Physics

Low Dimensional Materials

Density Functional Theory

Device Physics

Electromagnetic Simulation

Top articles of Byoung Don Kong

Effect of Quasi-One-Dimensional Properties on Source/Drain Contacts in Vertical Nanowire Field-Effect Transistors (VNWFETs)

Micromachines

2024/3/30

SUBSTRATE FOR SURFACE ACOUSTIC WAVE DEVICE AND SURFACE ACOUSTIC WAVE DEVICE COMPRISING THE SAME

2024/1/25

Enhanced thermoelectric figure of merit in highly-doped silicon nanowires via a corrugated surface modulation

Nano Energy

2023/12/15

Fluoride ion and hydrofluoric acid detection via silicon nanosheet field-effect transistor sensor

Sensors and Actuators B: Chemical

2023/10/15

Byoung Don Kong
Byoung Don Kong

H-Index: 9

Chang-Ki Baek
Chang-Ki Baek

H-Index: 19

Hydrogen Fluoride Gas Sensor by Silicon Nanosheet Field-Effect Transistor

IEEE Sensors Journal

2023/6/19

Byoung Don Kong
Byoung Don Kong

H-Index: 9

Chang-Ki Baek
Chang-Ki Baek

H-Index: 19

Memory device including double PN junctions and driving method thereof, and capacitor-less memory device including double PN junctions and control gates and operation method …

2023/5/30

Analytic bond order potential for indium gallium zinc oxide

Journal of Materials Chemistry C

2023

Su Hyun Park
Su Hyun Park

H-Index: 14

Byoung Don Kong
Byoung Don Kong

H-Index: 9

mm-band surface acoustic wave devices utilizing two-dimensional boron nitride

Scientific Reports

2022/11/29

Chang-Ki Baek
Chang-Ki Baek

H-Index: 19

Byoung Don Kong
Byoung Don Kong

H-Index: 9

A drain extended FinFET with enhanced DC/RF performance for high-voltage RF applications

Semiconductor Science and Technology

2022/10/5

Byoung Don Kong
Byoung Don Kong

H-Index: 9

Chang-Ki Baek
Chang-Ki Baek

H-Index: 19

A FinFET Design for Superior High-Voltage Performance

2022/7/4

Byoung Don Kong
Byoung Don Kong

H-Index: 9

Chang-Ki Baek
Chang-Ki Baek

H-Index: 19

Highly Reliable Memory Operation of High-Density Three-Terminal Thyristor Random Access Memory

Nanoscale Research Letters

2022/2/23

Terahertz Graphene quantum dot and Black Phosphorus bolometers: An update.

APS March Meeting Abstracts

2022

Inverse Design of Graphene FET by Deep Neural Network

2021/7/28

Chang-Ki Baek
Chang-Ki Baek

H-Index: 19

Byoung Don Kong
Byoung Don Kong

H-Index: 9

mm-Wave Surface Acoustic Wave Filter based on Hexagonal Boron Nitride

2021/7/28

Chang-Ki Baek
Chang-Ki Baek

H-Index: 19

Byoung Don Kong
Byoung Don Kong

H-Index: 9

Tunable Optical Absorption of Graphene Quantum Dots with Transition Metal Adatom

2021/7/28

Do Hyeon Kim
Do Hyeon Kim

H-Index: 6

Byoung Don Kong
Byoung Don Kong

H-Index: 9

Tunable optical property and zero-field splitting of transition metal adatom-graphene quantum dot systems

Journal of Materials Chemistry C

2021

Do Hyeon Kim
Do Hyeon Kim

H-Index: 6

Byoung Don Kong
Byoung Don Kong

H-Index: 9

Disorder Originated Unusual Mobility in Crystalline InGaZnO4

IEEE Electron Device Letters

2020/4/20

High-Voltage Drain-Extended FinFET With a High- Dielectric Field Plate

IEEE Transactions on Electron Devices

2020/2/12

Byoung Don Kong
Byoung Don Kong

H-Index: 9

Chang-Ki Baek
Chang-Ki Baek

H-Index: 19

Enhanced thermoelectric properties of cobalt silicide-silicon heterostructured nanowires

IEEE Transactions on Nanotechnology

2020/12/14

Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory

IEEE Open Journal of Nanotechnology

2020/12/7

See List of Professors in Byoung Don Kong University(Pohang University of Science and Technology)

Co-Authors

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