Radio-photoluminescence properties of samarium-doped alkaline earth sulfates

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Published On 2020/3/1

In this paper, we report radio-photoluminescence (RPL) properties of Sm-doped alkaline earth sulfates (CaSO4, SrSO4, and BaSO4) for possible applications in radiation measurements. The materials were prepared via solid state reaction by sintering at high temperature. By the conventional steady-state photoluminescence (PL) technique, it was confirmed that all these three types of materials show RPL, verified by comparing the PL spectra before and after X-ray irradiation. The luminescence of each irradiated material consists of emission features due to 5d-4f transitions and 4f-4f transitions of Sm2+, and the intensities increase with increasing the radiation dose. The sensitivity is the highest for CaSO4:Sm which is slightly less sensitive compared with a commercial RPL detector by a factor of approximately 5. The RPL response signal of CaSO4:Sm is notably stable, and no sign of fading is evident even after 20 …

Journal

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Published On

2020/3/1

Volume

466

Page

56-60

Authors

Hidehito Nanto

Hidehito Nanto

Kanazawa Institute of Technology

Position

H-Index(all)

44

H-Index(since 2020)

19

I-10 Index(all)

0

I-10 Index(since 2020)

0

Citation(all)

0

Citation(since 2020)

0

Cited By

0

Research Interests

Odor sensor

Dosimeter

Thin films

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Other Articles from authors

Hidehito Nanto

Hidehito Nanto

Kanazawa Institute of Technology

Journal of Alloys and Compounds

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Hidehito Nanto

Hidehito Nanto

Kanazawa Institute of Technology

Japanese Journal of Applied Physics

Radiophotoluminescence properties of Eu-doped Li2SrSiO4 for radiation detectors

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2023/12/20

Article Details
Hidehito Nanto

Hidehito Nanto

Kanazawa Institute of Technology

Journal of Materials Science: Materials in Electronics

ESR studies to elucidate the origin of the RPL emission of undoped-CaSO4

Recent research has shown that CaSO4, without any intentional addition of impurities, exhibits remarkable radiophotoluminescence (RPL) properties. However, the origin of the RPL in CaSO4 has yet to be fully understood. ESR measurements were carried out to identify the defect species responsible for RPL and elucidate the luminescence’s origin. ESR measurements on undoped-CaSO4 with different radiation sensitivities showed SO4−, SO2−+SO3−, PO42−, Si=O3 in P2O5–SiO2 (E’ center), Al2O3 hole center and Mn2+ defect species in CaSO4. This means that CaSO4 contains Al2O3, Mn2+, P, and Si as impurities, which are not intentionally added to CaSO4. As the results of this study, the different impurity states may influence the radiation sensitivity of the materials. It is suggested that the deliberate addition of P and Si elements, Al2O3 and Mn2+ could control the RPL properties.

Hidehito Nanto

Hidehito Nanto

Kanazawa Institute of Technology

Materials Research Bulletin

X-ray induced reduction of Sm3+ into Sm2+ in Li2CaSiO4 and its potential for radiation measurement applications

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Hidehito Nanto

Hidehito Nanto

Kanazawa Institute of Technology

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Hidehito Nanto

Hidehito Nanto

Kanazawa Institute of Technology

Recent advances in radiophotoluminescence materials for luminescence dosimetry

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2022/11/22

Article Details
Hidehito Nanto

Hidehito Nanto

Kanazawa Institute of Technology

Optically stimulated luminescence dosimeters: principles, phosphors and applications

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2022/11/21

Article Details
Hidehito Nanto

Hidehito Nanto

Kanazawa Institute of Technology

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Hidehito Nanto

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Kanazawa Institute of Technology

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Hidehito Nanto

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Kanazawa Institute of Technology

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Kanazawa Institute of Technology

Phosphors for Radiation Detectors

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Article Details
Hidehito Nanto

Hidehito Nanto

Kanazawa Institute of Technology

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Radiation-induced reduction of Eu3+ doped in SrAl2O4

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2021/11/15

Article Details
Hidehito Nanto

Hidehito Nanto

Kanazawa Institute of Technology

Sensors & Materials

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Hidehito Nanto

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Kanazawa Institute of Technology

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瀬戸就一 他: 半導体式ガスセンサの過渡応答出力の解析, 電気学会論文誌 E センサマイクロマシン準部門誌 Vol. 125 No. 3, p. 129-134 (2005)

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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Nanostructuring, fractal characterization and wettability of ion irradiated Au thin films and their thickness effect

This study proposes a method for modifying the wettability of Au thin films of thicknesses 5 nm and 10 nm on Si substrates using 8 keV Ne ion beam irradiation at different fluences, thereby enabling surface wettability adjustment at the nano-scale and its thickness dependence. This advancement would be highly beneficial for applications such as high-resolution printing and nano-biotechnology. The contact angle of the irradiated region for the 5 nm thin film changed from hydrophobic to hydrophilic with increasing ion dosage, whereas for the 10 nm thin film, it changed from hydrophilic to hydrophobic under the same conditions. Fractal analysis was performed on pristine and ion beam modified surfaces to investigate the underlying nano-structuring process, with reported values for average roughness (R a), Hurst exponent (H), fractal dimension (D f), contact angle (CA), and wettability at different ion dosages. Atomic …

Daisuke Nakauchi

Daisuke Nakauchi

Nara Institute of Science and Technology

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Scintillation properties of In-doped NaI transparent ceramics

In-doped NaI transparent ceramic scintillators were synthesized by the spark plasma sintering method, and In-doped NaI single crystal was grown by the Bridgman–Stockbarger method. The diffuse transmittance at the emission wavelength was ∼70% for the transparent ceramics and ∼90% for the single crystal. In the scintillation spectra under X-ray irradiation, emission peaks were observed at around 320, 460, and 510 nm in both of the transparent ceramic and single crystal samples. The peaks at 460 and 510 nm are due to 3P1 →1S0 transitions of In+. The decay time constants of the transparent ceramics and the single crystal were 1.8 μs. The X-ray induced afterglow level of the 0.1% In-doped NaI transparent ceramic and the single crystal was 170 and 777 ppm, respectively. In pulse height analysis, 662 keV photoabsorption peaks were clearly observed in all the samples when irradiated with 137Cs γ-rays …

Daniel Primetzhofer

Daniel Primetzhofer

Uppsala Universitet

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Experimental electronic stopping cross-section of EUROFER97 for slow protons, deuterons and helium ions

Electronic stopping cross section of tungsten for light ions was experimentally measured in a wide energy interval (20 to 6000 keV for protons and 50 to 9000 keV for helium) in backscattering and transmission geometries. The measurements were carried out in three laboratories (Austria, Germany and Sweden) using five different set-ups, the stopping data deduced from different data sets showed excellent agreement amongst each other, with total uncertainty varying within 1.5–3.8% for protons and 2.2–5.5% for helium, averaged over the respective energy range of each data set. The final data is compared to available data and to widely adopted semi-empirical and theoretical approaches, and found to be in good agreement with most adopted models at energies around and above the stopping maximum. Most importantly, our results extend the energy regime towards lower energies, and are thus of high …

Marcos A. G. Garcia

Marcos A. G. Garcia

Universidad Autónoma de Madrid

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Ion-induced surface effects on soda-lime, amorphous silica (aSiO2) and silicon (100) substrates with 1.5 MeV Cu ion implantation

Soda-lime, silica and silicon (100) substrates were implanted with 1.5 MeV Cu+ ions with observable macroscopic surface effects. All substrates were irradiated at 70°, at 200-nA currents, in room temperature conditions, and for a total ion fluence between 3×1016 and 2×1017 ions cm−2. Surface characterization was carried out using SEM and AFM. Changes on the morphology result in the emergence of surface structures resembling ripples in the early stage which evolve into complex wrinkling structures at high ion doses. The formation and growth of surface patterns may be elucidated in terms of low and medium energies theories.

Chung-Li Dong

Chung-Li Dong

Tamkang University

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Modification induced by 120 MeV Ag ion irradiation in ZnS

We report the structural, morphological, and optical properties of ZnS thin films before and after swift heavy ion (SHI) irradiation of 120 MeV Ag ions. These films were deposited by the spin coating method on the glass substrate and irradiated at various ion fluencies from 1 × 1011 to 1 × 1013 ions/cm2. The Grazing Incidence X-ray diffraction (GIXRD), Scanning electron microscopy (SEM), UV–visible transmittance, Photoluminescence (PL), and Raman Spectroscopy were used to characterize these ZnS thin films. The GIXRD patterns show a mixed phase of cubic and hexagonal structure after the ion irradiation. The crystallite sizes of pure and irradiated films are significantly modified. Raman spectroscopy shows a slight increase in the intensity of the 3LO mode of ZnS on irradiation. The SEM image shows nanoflake-like structures in pristine, and the irradiated thin films depict various morphologies (rod, platy, and …

Mandla Msimanga

Mandla Msimanga

Tshwane University of Technology

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Stopping force of protons in Pt, Mo, and Cr foils at energies between 325 keV and 900 keV using the forward scattering method

In this work, the stopping force of protons in Pt, Mo, and Cr foils was measured at energies between 325 and 900 keV using the forward scattering method. Obtained results were compared with predictions from the semi-empirical code SRIM, the purely theoretical code DPass, and shellwise local plasma approximation with Levine-Mermin dielectric function (SLPA-LM). Both theoretical predictions underestimate experimental data for Pt at the energies measured. However, the theoretical calculation results for Mo, and Cr displayed good agreement with experimental data over the measured energy range. The obtained results were also compared with data from the literature, which displayed experimental discrepancies, especially for Pt and Cr stopping while a very good agreement between all experimental data was observed for Mo data.

Mingmin Huang

Mingmin Huang

Sichuan University

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy

To promote the application of SiC devices in extreme environments, the irradiation damages of 4H-SiC Schottky barrier diodes (SBDs) irradiated with 6 MeV Au ions under room temperature (RT) and low temperature (LT) were investigated in this work. Deep level transient spectroscopy (DLTS) was used to analyze the changes in primary defects. DLTS measurements indicated the presence of six deep levels labeled EN, E1, E2, E3, E4 and E5. Notably, the peak positions for the samples irradiated under RT shifted to the right compared to those irradiated at LT with increasing fluence. This means that the deeper energy defects are produced under RT irradiation. The experimental results also demonstrated that the HI irradiation-induced defects are mainly located at interface between metal and SiC, especially the metal–semiconductor (M−S) interface edge. Therefore, these results suggest that the evolution of defects …