5.8 GHz band 10 W rectenna with GaAs E-pHEMT gated anode diode on the aluminum nitride antenna for thermal dispersion

Published On 2023/6/11

In this paper, the 5.8 GHz band 10 W rectenna is demonstrated. The GaAs bridge rectifier IC with GaAs E-pHEMT gated anode diodes (GADs) is employed to obtain input power of 10 W. The IC is directly connected with the inductive high-impedance antenna to reduce circuits’ loss. Furthermore, the antenna is implemented on the aluminum nitride (AlN) substrate for thermal dispersion. With migrated circuit functionalities, simulated radiation efficiency of the antenna is 99.2 %. Measured rectification efficiency of the rectifier is 83.7 % at input power of 10 W. This is the top performance among 10 W class rectifies

Published On

2023/6/11

Page

1003-1005

Authors

Naoki Sakai

Naoki Sakai

Kanazawa Institute of Technology

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H-Index(all)

8

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6

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Research Interests

Microwave circuit

Wireless power transfer

Rectifier

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Naoki Sakai

Naoki Sakai

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GaAs E-pHEMT gated anode diode を用いた 5.75 GHz 帯 1W レクテナ

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Naoki Sakai

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Kanazawa Institute of Technology

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Naoki Sakai

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Naoki Sakai

Naoki Sakai

Kanazawa Institute of Technology

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Naoki Sakai

Naoki Sakai

Kanazawa Institute of Technology

電子情報通信学会論文誌 C

AMC 動作基板上の誘導性高インピーダンスモノポールアンテナを用いる 5.8 GHz 帯大電力レクテナ

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Naoki Sakai

Naoki Sakai

Kanazawa Institute of Technology

5.8 GHz band 10 W rectenna with GaAs E-pHEMT gated anode diode on the aluminum nitride antenna for thermal dispersion

In this paper, the 5.8 GHz band 10 W rectenna is demonstrated. The GaAs bridge rectifier IC with GaAs E-pHEMT gated anode diodes (GADs) is employed to obtain input power of 10 W. The IC is directly connected with the inductive high-impedance antenna to reduce circuits’ loss. Furthermore, the antenna is implemented on the aluminum nitride (AlN) substrate for thermal dispersion. With migrated circuit functionalities, simulated radiation efficiency of the antenna is 99.2 %. Measured rectification efficiency of the rectifier is 83.7 % at input power of 10 W. This is the top performance among 10 W class rectifies

Naoki Sakai

Naoki Sakai

Kanazawa Institute of Technology

IEICE Technical Report; IEICE Tech. Rep.

5.8 GHz band 10 W rectenna on the aluminum nitride antenna for thermal dispersion

(in English) This paper presents the 5.8 GHz band 10W rectenna with GaAs E-pHEMT gated anode diode (GAD) on the aluminum nitride (AlN) antenna. The rectifier IC on the prototyped AlN antenna achieved a rectification efficiency of 83.7% at an input power of 10.5 W while maintaining a GAD junction temperature of 48 degrees. These results demonstrate that the rectenna can continuously receive RF power of 10 W with high rectification efficiency. Furthermore, we demonstrate a 3x3 rectenna array with the prototyped rectenna in a microwave power transfer (MPT) system. The MPT system with the rectenna array could transmit a DC power of 43.4 W, allowing a drone to fly continuously for ten minutes.

Naoki Sakai

Naoki Sakai

Kanazawa Institute of Technology

IEICE Conferences Archives

5.8 GHz 帯 10W 級倍電圧整流器 MMIC

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Naoki Sakai

Naoki Sakai

Kanazawa Institute of Technology

IEICE Conferences Archives

ダイオードの閾値と降伏電圧を考慮した倍電流整流回路の解析

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Naoki Sakai

Naoki Sakai

Kanazawa Institute of Technology

IEICE Conferences Archives

GaAs E-pHEMT gated anode diode を用いる 5.8 GHz 帯 5W レクテナ

大電力化に適するGaAs E-pHEMTによるgated anode diode(GAD)を用いる5.8GHz帯5Wレクテナの試作結果を示す.入力電力Pin=37dBm(5W)のときに整流効率=85.2%,出力電圧Vout=35.8Vである.

Naoki Sakai

Naoki Sakai

Kanazawa Institute of Technology

IEICE Technical Report; IEICE Tech. Rep.

Quasi millimeter wave high-power rectifier with GaAs E-pHEMT GADs

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