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Aniello Pelella

About Aniello Pelella

Aniello Pelella, With an exceptional h-index of 13 and a recent h-index of 13 (since 2020), a distinguished researcher at Università degli Studi di Salerno,

His recent articles reflect a diverse array of research interests and contributions to the field:

Multilayer WS2 for low-power visible and near-infrared phototransistors

n‐Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory

Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors

Fully printed memristors made with MoS 2 and graphene water-based inks

Effect of PMMA capping layer on black phosphorus field effect transistor

Ink-jet Printed Graphene-Silicon Schottky Diodes

Black phosphorus nanosheets in field effect transistors with Ni and NiCr contacts

Optoelectronic memory in 2D MoS2 field effect transistor

Aniello Pelella Information

University

Position

___

Citations(all)

649

Citations(since 2020)

649

Cited By

133

hIndex(all)

13

hIndex(since 2020)

13

i10Index(all)

15

i10Index(since 2020)

15

Email

University Profile Page

Google Scholar

Top articles of Aniello Pelella

Multilayer WS2 for low-power visible and near-infrared phototransistors

Discover Nano

2024/12

Aniello Pelella
Aniello Pelella

H-Index: 6

Ofelia Durante
Ofelia Durante

H-Index: 17

Arun Kumar
Arun Kumar

H-Index: 7

Lida Ansari
Lida Ansari

H-Index: 9

Brendan Roycroft
Brendan Roycroft

H-Index: 12

Farzan Gity
Farzan Gity

H-Index: 11

Antonio Di Bartolomeo
Antonio Di Bartolomeo

H-Index: 34

n‐Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory

Advanced Electronic Materials

2024/4/4

Arun Kumar
Arun Kumar

H-Index: 7

Aniello Pelella
Aniello Pelella

H-Index: 6

Ofelia Durante
Ofelia Durante

H-Index: 17

Lida Ansari
Lida Ansari

H-Index: 9

Farzan Gity
Farzan Gity

H-Index: 11

Antonio Di Bartolomeo
Antonio Di Bartolomeo

H-Index: 34

Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors

Materials Horizons

2024

Arun Kumar
Arun Kumar

H-Index: 7

Ofelia Durante
Ofelia Durante

H-Index: 17

Aniello Pelella
Aniello Pelella

H-Index: 6

Paolo Ciambelli
Paolo Ciambelli

H-Index: 35

Antonio Di Bartolomeo
Antonio Di Bartolomeo

H-Index: 34

Fully printed memristors made with MoS 2 and graphene water-based inks

Materials Horizons

2024

Alessandro Grillo
Alessandro Grillo

H-Index: 11

Aniello Pelella
Aniello Pelella

H-Index: 6

Minghao Zhao
Minghao Zhao

H-Index: 10

Jingjing Wang
Jingjing Wang

H-Index: 9

Zhirun Hu
Zhirun Hu

H-Index: 17

Antonio Di Bartolomeo
Antonio Di Bartolomeo

H-Index: 34

Cinzia Casiraghi
Cinzia Casiraghi

H-Index: 39

Effect of PMMA capping layer on black phosphorus field effect transistor

2023/10/22

A Kumar
A Kumar

H-Index: 1

Ink-jet Printed Graphene-Silicon Schottky Diodes

2023/10/22

Alessandro Grillo
Alessandro Grillo

H-Index: 11

Aniello Pelella
Aniello Pelella

H-Index: 6

Antonio Di Bartolomeo
Antonio Di Bartolomeo

H-Index: 34

Cinzia Casiraghi
Cinzia Casiraghi

H-Index: 39

Black phosphorus nanosheets in field effect transistors with Ni and NiCr contacts

physica status solidi (b)

2023/9

Arun Kumar
Arun Kumar

H-Index: 7

Enver Faella
Enver Faella

H-Index: 1

Aniello Pelella
Aniello Pelella

H-Index: 6

Antonio Di Bartolomeo
Antonio Di Bartolomeo

H-Index: 34

Optoelectronic memory in 2D MoS2 field effect transistor

Journal of Physics and Chemistry of Solids

2023/8/1

Arun Kumar
Arun Kumar

H-Index: 7

Enver Faella
Enver Faella

H-Index: 1

Ofelia Durante
Ofelia Durante

H-Index: 17

Aniello Pelella
Aniello Pelella

H-Index: 6

Antonio Di Bartolomeo
Antonio Di Bartolomeo

H-Index: 34

Temperature dependent black phosphorus transistor and memory

Nano Express

2023/3/6

Arun Kumar
Arun Kumar

H-Index: 7

Enver Faella
Enver Faella

H-Index: 1

Aniello Pelella
Aniello Pelella

H-Index: 6

Antonio Di Bartolomeo
Antonio Di Bartolomeo

H-Index: 34

Spatially resolved photo-response of a carbon nanotube/Si photodetector

Nanomaterials

2023/2/7

Luca Lozzi
Luca Lozzi

H-Index: 22

Aniello Pelella
Aniello Pelella

H-Index: 6

Antonio Di Bartolomeo
Antonio Di Bartolomeo

H-Index: 34

Maurizio Passacantando
Maurizio Passacantando

H-Index: 29

Black phosphorus unipolar transistor, memory, and photodetector

Journal of Materials Science

2023/2

Arun Kumar
Arun Kumar

H-Index: 7

Enver Faella
Enver Faella

H-Index: 1

Aniello Pelella
Aniello Pelella

H-Index: 6

Antonio Di Bartolomeo
Antonio Di Bartolomeo

H-Index: 34

Manipulation of the electrical and memory properties of MoS 2 field-effect transistors by highly charged ion irradiation

Nanoscale Advances

2023

Aniello Pelella
Aniello Pelella

H-Index: 6

Enver Faella
Enver Faella

H-Index: 1

Antonio Di Bartolomeo
Antonio Di Bartolomeo

H-Index: 34

Local characterization of field emission properties of graphene flowers

Advanced Electronic Materials

2023/1

Enver Faella
Enver Faella

H-Index: 1

Aniello Pelella
Aniello Pelella

H-Index: 6

Woo Young Kim
Woo Young Kim

H-Index: 8

Maurizio Passacantando
Maurizio Passacantando

H-Index: 29

Antonio Di Bartolomeo
Antonio Di Bartolomeo

H-Index: 34

A Self‐Powered CNT–Si Photodetector with Tuneable Photocurrent

Advanced Electronic Materials

2023/1

Aniello Pelella
Aniello Pelella

H-Index: 6

Maurizio Passacantando
Maurizio Passacantando

H-Index: 29

Enver Faella
Enver Faella

H-Index: 1

Alessandro Grillo
Alessandro Grillo

H-Index: 11

Antonio Di Bartolomeo
Antonio Di Bartolomeo

H-Index: 34

Two-dimensional α-In2Se3 field effect transistor for wide-band photodetection and non-volatile memory

Journal of Physics and Chemistry of Solids

2023/12/1

Aniello Pelella
Aniello Pelella

H-Index: 6

Ofelia Durante
Ofelia Durante

H-Index: 17

Maurizio Passacantando
Maurizio Passacantando

H-Index: 29

Monica Felicia Craciun
Monica Felicia Craciun

H-Index: 33

Saverio Russo
Saverio Russo

H-Index: 34

Antonio Di Bartolomeo
Antonio Di Bartolomeo

H-Index: 34

Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures

ACS Applied Nano Materials

2023/11/16

Ofelia Durante
Ofelia Durante

H-Index: 17

Enver Faella
Enver Faella

H-Index: 1

Arun Kumar
Arun Kumar

H-Index: 7

Aniello Pelella
Aniello Pelella

H-Index: 6

Francesco Romeo
Francesco Romeo

H-Index: 16

Saverio Russo
Saverio Russo

H-Index: 34

Antonio Di Bartolomeo
Antonio Di Bartolomeo

H-Index: 34

Manipulation of the electrical and memory device properties of monolayer MoS2 field-effect transistors by highly charged ion irradiation

2023/10/22

Enhanced photodetection in carbon-based devices with MIS parallel structure

2023/10/22

Aniello Pelella
Aniello Pelella

H-Index: 6

Alessandro Grillo
Alessandro Grillo

H-Index: 11

Enver Faella
Enver Faella

H-Index: 1

Maurizio Passacantando
Maurizio Passacantando

H-Index: 29

Antonio Di Bartolomeo
Antonio Di Bartolomeo

H-Index: 34

Electric Transport Properties In Few-Layers WTe2 Field Effect Transistors Affected by Temperature

2023/10/22

Saverio Russo
Saverio Russo

H-Index: 34

Etch and print: graphene-based diodes for silicon technology

ACS nano

2022/12/7

Alessandro Grillo
Alessandro Grillo

H-Index: 11

Aniello Pelella
Aniello Pelella

H-Index: 6

Antonio Di Bartolomeo
Antonio Di Bartolomeo

H-Index: 34

Cinzia Casiraghi
Cinzia Casiraghi

H-Index: 39

See List of Professors in Aniello Pelella University(Università degli Studi di Salerno)