Abhinandan Borah

About Abhinandan Borah

Abhinandan Borah, With an exceptional h-index of 9 and a recent h-index of 9 (since 2020), a distinguished researcher at Columbia University in the City of New York, specializes in the field of Semiconductor Device Physics, III-V and 2D materials.

His recent articles reflect a diverse array of research interests and contributions to the field:

Systems and methods for universal degenerate p-type doping with monolayer tungsten oxyselenide (tos)

Achieving high carrier density and high mobility in graphene using monolayer tungsten oxyselenide

Low-Resistance p-Type Ohmic Contacts to Ultrathin WSe2 by Using a Monolayer Dopant

Electrostatic Modeling and Contact Resistance Engineering in 2D Semiconductor Devices

Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices

Abhinandan Borah Information

University

Position

PhD student at

Citations(all)

588

Citations(since 2020)

505

Cited By

218

hIndex(all)

9

hIndex(since 2020)

9

i10Index(all)

9

i10Index(since 2020)

9

Email

University Profile Page

Google Scholar

Abhinandan Borah Skills & Research Interests

Semiconductor Device Physics

III-V and 2D materials

Top articles of Abhinandan Borah

Systems and methods for universal degenerate p-type doping with monolayer tungsten oxyselenide (tos)

2021/10/21

Low-Resistance p-Type Ohmic Contacts to Ultrathin WSe2 by Using a Monolayer Dopant

ACS Applied Electronic Materials

2021/6/21

Electrostatic Modeling and Contact Resistance Engineering in 2D Semiconductor Devices

2021

Abhinandan Borah
Abhinandan Borah

H-Index: 6

Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices

ACS Applied Materials & Interfaces

2020/12/22

See List of Professors in Abhinandan Borah University(Columbia University in the City of New York)

Co-Authors

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