Abdelatif Jaouad

Abdelatif Jaouad

Université de Sherbrooke

H-index: 17

North America-Canada

Abdelatif Jaouad Information

University

Université de Sherbrooke

Position

3IT

Citations(all)

1157

Citations(since 2020)

585

Cited By

839

hIndex(all)

17

hIndex(since 2020)

12

i10Index(all)

33

i10Index(since 2020)

17

Email

University Profile Page

Université de Sherbrooke

Abdelatif Jaouad Skills & Research Interests

III-V and GaN passivation

Photovoltaics

CPV

PECVD

ICP

Top articles of Abdelatif Jaouad

High‐efficiency GaAs solar cells grown on porous germanium substrate with PEELER technology

III–V solar cells are mainly grown on GaAs or Ge substrate, which significantly contributes to the final cost and affects the sustainable use of these rare materials. A so‐called PEELER process is developed, in which a porosification technique is used to create a weak layer between a Ge substrate and the epitaxial layers. This method enables the separation of the grown layers, allowing for the subsequent reuse of germanium and a reduction in the environmental and economic cost of optoelectronic devices. Technology validation using the device performance is important to assess the technology interest. For this purpose, the performance of 22 nondetached single‐junction GaAs photovoltaic cells grown and manufactured on porosified 100 mm Ge wafer without antireflection coating is fabricated and compared. All the cells exhibit comparable performance to state‐of‐the‐art GaAs solar cells (grown or Ge or GaAs …

Authors

Valentin Daniel,Thomas Bidaud,Jérémie Chretien,Nicolas Paupy,Ahmed Ayari,Thierno Mamoudou Diallo,Tadeáš Hanuš,Jonathan Henriques,Abdelatif Jaouad,Jean-François Lerat,Bouraoui Ilahi,Jinyoun Cho,Kristof Dessein,Christian Dubuc,Gwenaelle Hamon,Abderraouf Boucherif,Maxime Darnon

Journal

Solar RRL

Published Date

2024/1

Indoor and Outdoor Characterization of III-V/Ge Solar Cells Assembled on Glass Substrate for Concentrated Photovoltaic Applications

We propose and evaluate a new assembly process to fabricate concentrated photovoltaic (CPV) modules. We replace wire bonding, alignment, and cell interconnexions with alternative microelectronic surface mount technologies (SMT). For this purpose, solar cells are first assembled on tempered glass printed circuit boards (PCB) and then characterized indoors. This PCB is then integrated into a CPV module with an efficiency of 38.07 ℅ at CSOC measured outdoor.

Authors

K Kouame,J Kinfack,D Danovitch,P Albert,T Bidaud,A Turala,M Volatier,V Aimez,A Jaouad,M Darnon,G Hamon

Published Date

2023/6/11

3D interconnects for III-V semiconductor heterostructures for miniaturized power devices

Three-dimensional (3D) interconnects increase chip power density and enable miniaturization. Photonic chips require new processes to enable transitioning to 3D interconnects. We fabricate 3D interconnects on a multijunction solar cell, leveraging processes such as III-V heterostructure plasma etching, gold electrodeposition, and chemical-mechanical polishing to integrate through substrate vias to the heterostructure. Wafer bonding is used to handle 20-μm-thin III-V films. The strategy enables us to demonstrate photonic power devices having areas 3 orders of magnitude smaller compared to standard chips. The design also yields a small shading factor below 3%. Compared to miniaturized photonic power devices with two-dimensional connections, 3D interconnects achieve a 6-fold increase in wafer area use. These improvements will enhance the power yield per wafer while unlocking high-density and …

Authors

Mathieu de Lafontaine,Thomas Bidaud,Guillaume Gay,Erwine Pargon,Camille Petit-Etienne,Artur Turala,Romain Stricher,Serge Ecoffey,Maïté Volatier,Abdelatif Jaouad,Christopher E Valdivia,Karin Hinzer,Simon Fafard,Vincent Aimez,Maxime Darnon

Journal

Cell Reports Physical Science

Published Date

2023/12/20

Wafer-scale detachable monocrystalline germanium nanomembranes for the growth of III–V materials and substrate reuse

Germanium (Ge) is increasingly used as a substrate for high-performance optoelectronics, photovoltaics, and electronic devices. These devices are usually grown on thick and rigid Ge substrates manufactured by classical wafering techniques. Nanomembranes (NMs) provide an alternative to this approach while offering wafer-scale lateral dimensions, weight reduction, waste limitation, and cost effectiveness. Herein, we introduce the Porous germanium Efficient Epitaxial LayEr Release (PEELER) process, which consists of the fabrication of wafer-scale detachable Ge NMs on porous Ge (PGe) and substrate reuse. We demonstrate the growth of Ge NMs with monocrystalline quality as revealed by high-resolution transmission electron microscopy (HRTEM) characterization. Together with the surface roughness below 1 nm, it makes the Ge NMs suitable for growth of III–V materials. Additionally, the embedded …

Authors

Nicolas Paupy,Zakaria Oulad Elhmaidi,Alexandre Chapotot,Tadeáš Hanuš,Javier Arias-Zapata,Bouraoui Ilahi,Alexandre Heintz,Alex Brice Poungoué Mbeunmi,Roxana Arvinte,Mohammad Reza Aziziyan,Valentin Daniel,Gwenaëlle Hamon,Jérémie Chrétien,Firas Zouaghi,Ahmed Ayari,Laurie Mouchel,Jonathan Henriques,Loïc Demoulin,Thierno Mamoudou Diallo,Philippe-Olivier Provost,Hubert Pelletier,Maïté Volatier,Rufi Kurstjens,Jinyoun Cho,Guillaume Courtois,Kristof Dessein,Sébastien Arcand,Christian Dubuc,Abdelatif Jaouad,Nicolas Quaegebeur,Ryan Gosselin,Denis Machon,Richard Arès,Maxime Darnon,Abderraouf Boucherif

Journal

Nanoscale Advances

Published Date

2023

New Triple-Junction Solar Cell Assembly Process for Concentrator Photovoltaic Applications

We developed a new assembly process to fabricate concentrator photovoltaic (CPV) modules based on microelectronic surface mount technologies (SMT). Functional characterizations of resultant modules demonstrated that the configuration and process did not degrade solar cell performance. Dimensional characterizations showed high placement accuracy. The thermal performance was compared to a standard CPV module using ANSYS finite element thermal simulations. The SMT based module was shown to dissipate heat more efficiently than the conventional module with a device temperature of 58±0.24°C compared to 69±0.34°C. This proof of concept demonstrates viability of the new assembly process with a strong potential to reduce CPV integration costs.

Authors

Konan Kouame,P Haghparast,Pierre Albert,Artur Turala,Thomas Bidaud,Abdelatif Jaouad,David Danovitch,Gwenaelle Hamon,Maïté Volatier,Vincent Aimez,Maxime Darnon

Published Date

2023/5/30

Low-Cost Passivated Al Front Contacts for III-V/Ge Multijunction Solar Cells

Improving the performances and reducing costs of III-V multijunction solar cells are crucial in aerospatial energy systems and in terrestrial concentrator modules. We attempted to achieve both objectives by implementing non-ohmic metal/semiconductor interface contacts on the front surface of III-V/Ge triple-junction solar cells. We demonstrate the feasibility of this concept for this type of solar cell by a simple evaporation of Al only either on the GaAs contact layer or the AlInP window. The best results were obtained when sulfur passivation by (NH4)2Sx was conducted on the GaAs contact layer. This allowed for a reduction in reverse saturation dark current density by one order of magnitude and a slight increase in Voc of almost 20 mV under 1 sun illumination relative to a reference device with Pd/Ge/Ti/Pd ohmic contacts. However, poor performances were observed at first under concentrated sunlight. Further annealing the solar cells with Al front metallization resulted in the reduction of Voc to the same level as the reference solar cell but allowed for good performances under high illumination. Indeed, an efficiency over 34% was observed at 500 suns light intensity both for Al and Pd/Ge/Ti/Pd contacted solar cells.

Authors

Olivier Richard,Artur Turala,Vincent Aimez,Maxime Darnon,Abdelatif Jaouad

Journal

Energies

Published Date

2023/8/26

Présentation du GIP-CNFM-CIME Nanotech

cnfm_logo Le Groupement d’Intérêt Public pour la Coordination Nationale de la Formation en Microélectronique et en nanotechnologies, est une structure nationale, créée en 2002 par Le Ministère en charge de l'Enseignement Supérieur et la Recherche. Il a pour mission de coordonner les actions de formation dans le domaine élargi de la microélectronique et des nanotechnologies. Le GIP est constitué des 12 établissements universitaires français, porteurs des plateformes technologiques, ainsi que des partenaires industriels nationaux du domaine, à savoir l’ACSIEL Alliance Electronique.

Authors

Abdelhamid Aitoumeri

Published Date

2023/5/26

Outdoor Characterization of Solar Cells With Microstructured Antireflective Coating in a Concentrator Photovoltaic Monomodule

Microstructured antireflective coatings (ARCs) have been identified as a promising solution to reduce optical losses in concentrator photovoltaics’ (CPV) modules. We fabricated and tested in field a CPV module made of four monomodules with a concentration factor of 250× that embed either solar cells with microstructured encapsulating ARC or solar cells with multilayer ARC as a reference. The microstructured encapsulating ARC was made of semiburied silica beads in polydimethylsiloxane. The module was in operation for one year in the severe climatic conditions of Sherbrooke, QC, Canada, before extracting the monomodules performance. Despite a suboptimal module design, we report a monomodule efficiency of 29.7% at 900 W/m 2 for a cell with microstructured encapsulating ARC. This proves the potential of microstructured encapsulating ARC to enable high-performance CPV systems.

Authors

Arnaud Joel Kinfack Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maïté Volatier,Vincent Aimez,Gwenaëlle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon

Journal

IEEE Journal of Photovoltaics

Published Date

2023/8/8

Band gap narrowing induced by oxygen vacancies in reactively sputtered TiO2 thin films

Amorphous TiO2-x thin films were deposited using direct current reactive magnetron sputtering. It was possible to tune the defect concentration by controlling the oxygen flow rate during the deposition process. The operating deposition regime has a significant influence on the properties of the TiO2-x film. The refractive index was found to decrease with increasing oxygen flow rate, which was essentially related to changes in film density. Besides this, increasing the oxygen vacancy defect concentration induced a slight decrease in the optical bandgap, as well as widening of the defect's Urbach band tails near the conduction band edge. For TiO2-x films deposited in oxygen-deficient conditions, the decrease in optical bandgap and widening of Urbach tails induced the shift of the Fermi level towards the conduction band, which enhanced the concentration of the charge carriers.

Authors

Abdelouadoud El Mesoudy,Denis Machon,Andreas Ruediger,Abdelatif Jaouad,Fabien Alibart,Serge Ecoffey,Dominique Drouin

Journal

Thin Solid Films

Published Date

2023/3/31

Experimental demonstration of the strong impact of plasma excitation frequency range on electronic properties of silicon nitride/GaAs interfaces

Passivation/encapsulation of III–V electronic and photonic circuits and devices is often performed using plasma-enhanced chemical vapor deposited Si x N y with a standard high frequency excitation of 13.56 MHz. The hypothesis of a possible higher passivation process efficiency for low frequency Si x N y deposition on GaAs has been suggested by comparison with published work on high frequency. In this work, we report a direct experimental demonstration of the effect of the RF plasma source frequency on electronic properties of GaAs/Si x N y interfaces during a passivation process. GaAs substrates from the same wafer are processed in the same reactor using the same plasma conditions except for the plasma excitation frequency and MIS structures are fabricated to probe interface electronic properties. Comparing interfaces obtained with a plasma source frequency below or over the ion transit frequency (∼ 2 …

Authors

Olivier Richard,Hasna Mziouek,Richard Arès,Vincent Aimez,Abdelatif Jaouad

Journal

Surfaces and Interfaces

Published Date

2023/8/1

New Concentrated Photovoltaic (CPV) module architecture

New Concentrated Photovoltaic (CPV) module architecture - Archive ouverte HAL Accéder directement au contenu Documentation FR Français (FR) Anglais (EN) Se connecter HAL science ouverte Recherche Loading... Recherche avancée Information de documents Titres Titres Sous-titre Titre de l'ouvrage Titre du volume (Série) Champ de recherche par défaut (multicritères) + texte intégral des PDF Résumé Texte intégral indexé des documents PDF Mots-clés Type de document Sous-type de document Tous les identifiants du document Identifiant HAL du dépôt Langue du document (texte) Pays (Texte) Ville À paraître (true ou false) Ajouter Auteur Auteur (multicritères) Auteur (multicritères) Auteur : Nom complet Auteur : Nom de famille Auteur : Prénom Auteur : Complément de nom, deuxième prénom Auteur : Organisme payeur Auteur : IdHal (chaîne de caractères) Auteur : Fonction Auteur : personID (entier) Auteur …

Authors

K Kouame,D Danovitch,P Albert,A Turala,M Volatier,V Aimez,A Jaouad,M Darnon,G Hamon

Published Date

2023

Characteristics of Detachable III-V Solar Cells Grown on Porous Germanium

III-V photovoltaic cells typically use germanium (Ge) as a substrate for the epitaxial growth, however, this material contributes significantly to the overall price of the multijunction solar cells. In order to reduce the environmental and economic cost of the solar cells, we have developed a porosification technique using bipolar electrochemical etching (BBE) to create a weak layer between the Ge substrate and the epitaxial layers. This approach allows the easy separation of the grown layers and the subsequent reuse of germanium. As evidence of the potential of this method, we have compared the performances of non-detached single-junction III-V solar cells grown and fabricated (without anti-reflection coating-ARC) on porosified Ge, and on bulk Ge as a reference. All the final cells show mirror-like monocrystalline III-V layers with comparable characteristics notably concerning the Voc (VocGePorous=0.862V vs …

Authors

Valentin Daniel,Thomas Bidaud,Jeremie Chretien,Abdelatif Jaouad,Jean-francois Lerat,Nicolas Paupy,Bouraoui Ilahi,Jinyoun Cho,Kristof Dessein,Christian Dubuc,Gwenaelle Hamon,Abderaouf Boucherif,Maxime Darnon

Published Date

2023/6/11

Finite Element Modeling and Experimental Validation of Concentrator Photovoltaic Module Based on Surface Mount Technology

In this study, an Al-Mg alloy sheet (AA5052 series) is subjected to a newly modified severe plastic deformation (SPD) process named as constrained groove pressing (CGP). Two different routes of classical and cross are employed and compared for the first time in this research. Each pass of the classical route process is including four subsequent corrugating and straightening stages with a 180-degree rotation between them and imparted an equivalent plastic strain of ∼1.16. Meanwhile, the number of stages for cross route process is eight as well as a 90-degree rotation between the consequent passes and leads to the imposing of a strain ∼2.32. These processes are implemented up to two passes on the examined Al-Mg alloy. As the main objective of the present research, strain and hardness distributions along the main three directions (rolling, transverse, and normal) and from different sections (surface and …

Authors

M. Moradpour,F. Khodabakhshi,S.R. Mohebpour,H. Eskandari,M. Haghshenas

Journal

Journal of Manufacturing Processes

Published Date

2018/12

Study of electrical properties of Al/Si3N4/n-GaAs MIS capacitors deposited at low and high frequency PECVD

As for silicon, surface passivation of GaAs and III-V semiconductors using silicon nitride (Si3N4) deposited by plasma enhanced chemical deposition (PECVD) is widely used to improve devices and circuits stability, reliability and for encapsulation. In this work, the effect of plasma excitation frequency in the PECVD reactor on the surface passivation efficiency of GaAs during Si3N4 deposition was investigated. Metal-Insulator-Semiconductor (Al/Si3N4/n-GaAs) capacitors are fabricated and characterized using capacitance–voltage (C–V), and conductance–voltage (G–V) to compare electronic properties of GaAs/Si3N4 interfaces depending on the use of a high frequency PECVD (HF-PECVD) or low frequency (LF-PECVD) process. The drastic advantage of using the LF-PECVD technique for the passivation of GaAs is clearly demonstrated on the characteristic C–V at 1 MHz where a good surface potential was …

Authors

Wafaa Zibar,Olivier Richard,Asmaa Drighil,Touria Lachhab,Hasna Mziouek,Vincent Aimez,Abdelatif Jaouad,Rhma Adhiri

Journal

The European Physical Journal Applied Physics

Published Date

2022

Miniaturization of High Efficiency InGaP/InGaAs/Ge Solar Cells and Pathways for Further Improvements

Miniaturization of High Efficiency InGaP/InGaAs/Ge Solar Cells and Pathways for Further Improvements - Archive ouverte HAL Accéder directement au contenu Documentation FR Français (FR) Anglais (EN) Se connecter HAL science ouverte Recherche Loading... Recherche avancée Information de documents Titres Titres Sous-titre Titre de l'ouvrage Titre du volume (Série) Champ de recherche par défaut (multicritères) + texte intégral des PDF Résumé Texte intégral indexé des documents PDF Mots-clés Type de document Sous-type de document Tous les identifiants du document Identifiant HAL du dépôt Langue du document (texte) Pays (Texte) Ville À paraître (true ou false) Ajouter Auteur Auteur (multicritères) Auteur (multicritères) Auteur : Nom complet Auteur : Nom de famille Auteur : Prénom Auteur : Complément de nom, deuxième prénom Auteur : Organisme payeur Auteur : IdHal (chaîne de caractères) …

Authors

Thomas Bidaud,Corentin Jouanneau,Pierre Albert,Mathieu de Lafontaine,Abdelatif Jaouad,Artur Turala,Gwenaelle Hamon,Maxime Darnon

Published Date

2022

CPV module to rate antireflective and encapsulant coating in outdoor conditions

Reflections are the most important channel losses in CPV modules. Since high efficiency solar cells need a protection against moisture and oxidation, we study an antireflective coating which also encapsulates the solar cells. It is based on a monolayer of microbeads partially submerged into PDMS. In this work, a CPV module is designed to compare the electrical performance of encapsulated and bare solar cells. A preliminary study demonstrates an increase in shortcircuit current by 3.8% with EQE measurements and simulations. Outdoor measurements in Sherbrooke, Quebec, Canada gave a 6.4% increase in current for a 280X module on a clear cold day in September, after rejecting aberrant measurements, which confirms the interest of using microbeads as an antireflective coating for CPV applications.

Authors

Arnaud Ritou,Philippe St-Pierre,PO Provost,Gavin Forcade,Christian Dubuc,Olivier Dellea,Gwenaëlle Hamon,Maïté Volatier,Abdelatif Jaouad,Christopher E Valdivia,Karin Hinzer,Vincent Aimez,Maxime Darnon

Journal

AIP Conference Proceedings

Published Date

2022/9/2

Toward an Innovative Monolithic Integration of Vertical and Lateral GaN Devices

This work presents an innovative technology where GaN-based vertical and lateral devices are monolithically integrated. Indeed, this technology will enable to drive high-power switching devices (vertical GaN power FinFETs) using lateral GaN HEMTs with minimum losses and high stability. The main challenge of this technology is the electrical isolation between these two devices. In this paper, a new isolation approach is presented to avoid any degradation of the lateral transistor performance. In fact, the high voltage applied at the drain of the vertical GaN power FinFET can drastically affect the drain current of the lateral GaN HEMT. To overcome this problem, a highly doped n + GaN layer is inserted between the epi-layers of these two devices. TCAD-Sentaurus simulator is used to validate this new approach. Indeed, this highly n-doped GaN layer is blocking the vertical high electrical field and preventing any depletion of the 2D gas of the lateral GaN HEMT. To the best of our knowledge, it is the first time where the vertical and lateral GaN devices are integrated within the same technology.

Authors

Zahraa Zaidan,Nedal Al Taradeh,Christophe Rodriguez,Abdelatif Jaouad,Ali Soltani,Josiane Tasselli,Dominique Planson,Hassan Maher,Karine Isoird,Luong Viet Luong,Camille Sonneville,Yvon Cordier,Frederic Morancho

Published Date

2022/10/26

Application of Passivation Techniques to III-V/III-N Opto-Electronic and Electronic Components

Application of Passivation Techniques to III-V/III-N Opto-Electronic and Electronic Components - Archive ouverte HAL Accéder directement au contenu Documentation FR Français (FR) Anglais (EN) Se connecter HAL science ouverte Recherche Loading... Recherche avancée Information de documents Titres Titres Sous-titre Titre de l'ouvrage Titre du volume (Série) Champ de recherche par défaut (multicritères) + texte intégral des PDF Résumé Texte intégral indexé des documents PDF Mots-clés Type de document Sous-type de document Tous les identifiants du document Identifiant HAL du dépôt Langue du document (texte) Pays (Texte) Ville À paraître (true ou false) Ajouter Auteur Auteur (multicritères) Auteur (multicritères) Auteur : Nom complet Auteur : Nom de famille Auteur : Prénom Auteur : Complément de nom, deuxième prénom Auteur : Organisme payeur Auteur : IdHal (chaîne de caractères) Auteur : …

Authors

Olivier Richard,Rahma Adhiri,Ali Ahaitouf,Hassan Maher,Soltani Ali,Vincent Aimez,Abdelatif Jaouad

Published Date

2022

Micro-Scale III-V/Ge Multijunction Solar Cell with Through Cell Via Contacts

There has been a growing interest for micro-scale concentrator photovoltaics (micro-CPV) over the past few years. The main goal is to reduce the cell size to a sub-millimetric range to gain several benefits such as better handling, better thermal management and reduced series resistance losses. In this work, we present the microfabrication of micro-scale III-V/Ge triple junction solar cells with through cell via contacts (TCVC) for micro-CPV applications. This contact architecture transfers the front side contact to the back side by using isolated and metallized vias to reduce the shading and the resistive losses. A process was developed to fabricate 180x180 µm2 solar cells with a single through cell via contact. The first prototypes have been successfully fabricated and the electrical characterization shows good performance. A 1-sun open-circuit voltage of 2.28 V was obtained, which is high considering the small device …

Authors

Mathieu de Lafontaine,Guillaume Gay,Erwine Pargon,Camille Petit-Etienne,Romain Stricher,Serge Ecoffey,Artur Turala,Maïté Volatier,Abdelatif Jaouad,Simon Fafard,Vincent Aimez,Maxime Darnon

Published Date

2022/6/5

Fast External Quantum Efficiency Measurements Using a Fourier Transform-Based Spectroscopy Approach for the Investigation of InGaP/InGaAs/Ge Microcells

Fast External Quantum Efficiency Measurements Using a Fourier Transform-Based Spectroscopy Approach for the Investigation of InGaP/InGaAs/Ge Microcells - CentraleSupélec Accéder directement au contenu Documentation FR Français (FR) Anglais (EN) Se connecter Portail HAL CentraleSupélec Recherche Loading... Recherche avancée Information de documents Titres Titres Sous-titre Titre de l'ouvrage Titre du volume (Série) Champ de recherche par défaut (multicritères) + texte intégral des PDF Résumé Texte intégral indexé des documents PDF Mots-clés Type de document Sous-type de document Tous les identifiants du document Identifiant HAL du dépôt Langue du document (texte) Pays (Texte) Ville À paraître (true ou false) Ajouter Auteur Auteur (multicritères) Auteur (multicritères) Auteur : Nom complet Auteur : Nom de famille Auteur : Prénom Auteur : Complément de nom, deuxième prénom Auteur : …

Authors

Christophe Longeaud,José Alvarez,Alexandre Jaffré,Mattia da Lisca,Corentin Jouanneau,Thomas Bidaud,Jean-Paul Kleider,Abdelatif Jaouad,Marie-Estelle Gueunier-Farret,Vincent Aimez,Gwenaëlle Hamon,Maxime Darnon

Published Date

2022/9/26

First Feedback from a CPV Plant in a Nordic Location, Québec, Canada

First Feedback from a CPV Plant in a Nordic Location, Québec, Canada - Archive ouverte HAL Accéder directement au contenu Documentation FR Français (FR) Anglais (EN) Se connecter HAL science ouverte Recherche Loading... Recherche avancée Information de documents Titres Titres Sous-titre Titre de l'ouvrage Titre du volume (Série) Champ de recherche par défaut (multicritères) + texte intégral des PDF Résumé Texte intégral indexé des documents PDF Mots-clés Type de document Sous-type de document Tous les identifiants du document Identifiant HAL du dépôt Langue du document (texte) Pays (Texte) Ville À paraître (true ou false) Ajouter Auteur Auteur (multicritères) Auteur (multicritères) Auteur : Nom complet Auteur : Nom de famille Auteur : Prénom Auteur : Complément de nom, deuxième prénom Auteur : Organisme payeur Auteur : IdHal (chaîne de caractères) Auteur : Fonction Auteur : personID (…

Authors

Mehdi Talebi,Maite Volatier,Abdelatif Jaouad,Christian Dubuc,Vincent Aimez,Maxime Darnon

Published Date

2022

Multijunction solar cell mesa isolation: Correlation between process, morphology and cell performance

Multijunction solar cells must be electrically isolated from one to another at the end of the fabrication process; a step known as mesa isolation. In this study, three different techniques are assessed to perform this step: saw-dicing, wet etching and plasma etching. Triple junction solar cells were fabricated with each process and the open-circuit voltages were measured in order to compare the impact of each technique on the device performance. An optional wet treatment is also proposed to clean the sidewalls after the mesa isolation process. The mesa sidewalls were characterized by scanning electron microscopy and atomic force microscopy to assess the profile length and roughness respectively. The cell performance was then correlated to the sidewall length and roughness for all three isolation techniques. This study indicates that a plasma etching process followed by a wet clean is the process that maximizes …

Authors

Mathieu de Lafontaine,Farah Ayari,Erwine Pargon,Guillaume Gay,Camille Petit-Etienne,Artur Turala,Gwenaelle Hamon,Abdelatif Jaouad,Maïté Volatier,Simon Fafard,Vincent Aimez,Maxime Darnon

Journal

Solar Energy Materials and Solar Cells

Published Date

2022/6/1

Dual role of 3C-SiC interlayer on DC and RF isolation of GaN/Si-based devices

The impact of Cubic Silicon Carbide (3C-SiC) transition layer on breakdown voltage and frequency performance of GaN high electron mobility transistors is investigated. A combination of distinct material and device characterizations techniques, including Raman spectroscopy, coplanar waveguides, electrical measurements, and Technology Computer-Aided Design (TCAD) simulations, are adopted to inspect the role of the 3C-SiC interlayer. Raman spectra reveal a good quality of the 3C-SiC layer, similar to the mono-crystalline 3C-SiC spectra. A relatively low transmission loss of∼ 0.16 dB/mm at 40 GHz is measured for the device with 3C-SiC layer, rather than 2.1 dB/mm for the device without 3C-SiC. In addition, a soft breakdown voltage around 1530 V at 1 μA/mm is achieved, which is three times larger compared with that of the conventional device. The failure mechanism, related to carrier injection at the …

Authors

A El Hadi Khediri,B Benbakhti,J-C Gerbedoen,H Maher,A Jaouad,Nour Eddine Bourzgui,Ali Soltani

Journal

Applied Physics Letters

Published Date

2022/9/19

Multi-Terminal Three-Junction Solar Cells for Sub-Cells Characterization

Multi-Terminal Three-Junction Solar Cells for Sub-Cells Characterization - Archive ouverte HAL Accéder directement au contenu Documentation FR Français (FR) Anglais (EN) Se connecter HAL science ouverte Recherche Loading... Recherche avancée Information de documents Titres Titres Sous-titre Titre de l'ouvrage Titre du volume (Série) Champ de recherche par défaut (multicritères) + texte intégral des PDF Résumé Texte intégral indexé des documents PDF Mots-clés Type de document Sous-type de document Tous les identifiants du document Identifiant HAL du dépôt Langue du document (texte) Pays (Texte) Ville À paraître (true ou false) Ajouter Auteur Auteur (multicritères) Auteur (multicritères) Auteur : Nom complet Auteur : Nom de famille Auteur : Prénom Auteur : Complément de nom, deuxième prénom Auteur : Organisme payeur Auteur : IdHal (chaîne de caractères) Auteur : Fonction Auteur : personID (…

Authors

Farah Ayari,Solène Moreau,Mathieu De Lafontaine,Artur Turala,Gwenaelle Hamon,Thomas Bidaud,Maite Volatier,Vincent Aimez,Abdelatif Jaouad,Maxime Darnon

Published Date

2022

Sub-millimeter-scale multijunction solar cells for concentrator photovoltaics (CPV)

Concentrator photovoltaic (CPV) technologies provide the highest photovoltaic conversion efficiency but remain too expensive for very large scale development. Reduction of the dimension (micro-CPV) is a promising approach towards cost reduction but necessitates sub-millimeter-scale high efficiency solar cells. In this paper, we review the challenges faced by sub-millimeter-scale solar cells for application in micro-CPV. We show that plasma etching processes are necessary to fabricate sub-millimeter-scale high-efficiency solar cells to avoid a waste of material in the isolation and dicing lines. We also show that despite the cell performance is known to degrade when the dimension of the cell is downscaled, this degradation can be negligible when optimized etching and passivation processes are used and when the cell operates under high concentration (<500x). The through-cell via contact architecture is a …

Authors

Maxime Darnon,Mathieu de Lafontaine,Pierre Albert,Corentin Jouanneau,Thomas Bidaud,Christian Dubuc,Maïté Volatier,Vincent Aimez,Abdelatif Jaouad,Gwenaelle Hamon

Published Date

2022/3/4

Comparison of various InGaAs-based solar cells for concentrated photovoltaics applications

InGaAs lattice matched to InP is a promising material for bottom sub-cell in a 4-junction solar cell designed for concentrated photovoltaics applications. Here we compare the performances of two structures that could replace standard monolithic InGaAs homojuntion. The first one is a stand-alone solar cell realized via epitaxial lift-off (ELO) process on a flexible substrate. The second one is a heterojunction solar cell, Nept on its parent InP substrate, composed of an InP emitter and an InGaAs absorber. A third structure made of an homojunction InGaAs solar cell on an InP substrate is used as reference. Under one sun illumination the heterojunction solar cell shows the highest VOC (383 mV) and fill factor. Nevertheless, when performing under concentrated sunlight the structure is limited by a lower VOC increase rate and a high series resistance compared to the ELO cell. Indeed, ELO cell shows a lower VOC (353 mV …

Authors

François Chancerel,Philippe Regreny,Jean-Louis Leclercq,Maïté Volatier,Abdelatif Jaouad,Maxime Darnon,Simon Fafard,Michel Gendry,Vincent Aimez

Journal

AIP Conference Proceedings

Published Date

2022/9/2

Plasma etching of III-V materials for photo transducers fabrication

Plasma etching of III-V materials for photo transducers fabrication - Archive ouverte HAL Accéder directement au contenu Documentation FR Français (FR) Anglais (EN) Se connecter HAL science ouverte Recherche Loading... Recherche avancée Information de documents Titres Titres Sous-titre Titre de l'ouvrage Titre du volume (Série) Champ de recherche par défaut (multicritères) + texte intégral des PDF Résumé Texte intégral indexé des documents PDF Mots-clés Type de document Sous-type de document Tous les identifiants du document Identifiant HAL du dépôt Langue du document (texte) Pays (Texte) Ville À paraître (true ou false) Ajouter Auteur Auteur (multicritères) Auteur (multicritères) Auteur : Nom complet Auteur : Nom de famille Auteur : Prénom Auteur : Complément de nom, deuxième prénom Auteur : Organisme payeur Auteur : IdHal (chaîne de caractères) Auteur : Fonction Auteur : personID (entier) …

Authors

Benjamin Breton,Thomas Bidaud,Mathieu de Lafontaine,Abdelatif Jaouad,Denis Masson,Simon Fafard,Erwine Pargon,Camille Petit-Etienne,Gwenaelle Hamon,Maxime Darnon

Published Date

2022

Microstructured antireflective encapsulant on concentrator solar cells

Microstructured antireflective coatings (ARCs) can reduce reflection losses over a wide range of incidence angles when applied to the surface of a high‐efficiency III‐V photovoltaic cell in a concentrator photovoltaic (CPV) system. In this article, we present a microstructured ARC consisting of a monolayer of close‐packed silica microbeads partially submerged within a polydimethylsiloxane (PDMS) cell encapsulant for use within a reference 500× CPV submodule. Comparing a commercialized SiOx encapsulant to this microstructured coating with 25% submerged 1,000 nm‐diameter beads, angle‐dependent external quantum efficiency measurements yield a 2.6% current gain for the microstructured coating. Simulations demonstrate good agreement with measurements, predicting a 2.4% current gain for the same configuration. Extrapolating with our validated model, we estimate a maximum and achievable (within …

Authors

Gavin P Forcade,Arnaud Ritou,Philippe St‐Pierre,Olivier Dellea,Maïté Volatier,Abdelatif Jaouad,Christopher E Valdivia,Karin Hinzer,Maxime Darnon

Journal

Progress in Photovoltaics: Research and Applications

Published Date

2022/2

Multijunction solar cell mesa isolation: A comparative study

At the end of the fabrication process, multijunction solar cells must be electrically isolated from one to another; a step commonly known as mesa isolation. In this paper, three different techniques are assessed to perform this step: sawdicing, wet etching and plasma etching. Triple junction solar cells were fabricated with each process and the open-circuit voltages were measured in order to compare the impact of each technique on the device performance. An optional wet treatment is also proposed to clean the sidewalls after the mesa isolation process. The process throughput and the wafer area yield are also assessed for all techniques in order to determine which one is the most suitable from the industrial standpoint. This study indicates that a plasma etching process followed by a wet clean is the process that maximizes the solar cell performance, the process throughput and the wafer area yield.

Authors

Mathieu de Lafontaine,Farah Ayari,Erwine Pargon,Guillaume Gay,Camille Petit-Etienne,Artur Turala,Abdelatif Jaouad,Maïté Volatier,Simon Fafard,Vincent Aimez,Maxime Darnon

Journal

AIP Conference Proceedings

Published Date

2022/9/2

Three‐junction monolithic interconnected modules for concentrator photovoltaics

A core issue in concentrator photovoltaic technology (CPV) is the resistive losses in cells that usually limits the maximum photoconversion efficiency under high concentration. We propose the use of three‐junction monolithic interconnected modules (MIM) to mitigate resistive losses by providing high‐voltage low‐current power. First, we present the fabrication of InGaP/InGaAs/Ge front‐contacted microcells with various designs and dimensions. Front‐contacted cells are the key enabler for the MIM fabrication and demonstrate good electrical characteristics under one sun, similar to standard‐contacted cells. The base front contact size is minimized to limit the unutilized area on the wafer. Second, fabrication techniques for interconnecting cells in MIM are described. Finally, electrical measurements show a record conversion efficiency of 35.1% under 798 suns for the first three‐junction MIM reported (17.8% when …

Authors

Pierre Albert,Abdelatif Jaouad,Gwenaëlle Hamon,Maïté Volatier,Yannick Deshayes,Laurent Béchou,Vincent Aimez,Maxime Darnon

Journal

Progress in Photovoltaics: Research and Applications

Published Date

2021/6

Anisotropic and low damage III-V/Ge heterostructure etching for multijunction solar cell fabrication with passivated sidewalls

This article presents a complete plasma etching process to etch high aspect ratio patterns on III-V/Ge solar cell heterostructure with low damage for the fabrication of multijunction solar cells with a through cell via contact architecture. A SiCl4/H2 chemistry was studied with different hydrogen dilutions within the plasma (0%, up to 67%) and with different cathode temperatures (20∘C, up to 200∘C). This chemistry choice creates a SiClx-based inhibiting layer on the sidewalls that promotes anisotropic etching through the epitaxial heterostructure. The study suggests that a high hydrogen flow and a low temperature reduce the chemical reactions that create sidewall erosion. A high hydrogen flow appears to provide a hydrogen passivation of the non-radiative defects on the III-V heterostructure sidewall during the etching process. III-V/Ge triple junction solar cells with standard grid line and busbar front and back contacts …

Authors

Mathieu de Lafontaine,Erwine Pargon,Guillaume Gay,Camille Petit-Etienne,Sylvain David,Jean-Paul Barnes,Névine Rochat,Abdelatif Jaouad,Maïté Volatier,Simon Fafard,Vincent Aimez,Maxime Darnon

Journal

Micro and Nano Engineering

Published Date

2021/6/1

III-V/Ge Heterostructure Plasma Etching and Passivation With a Single Plasma Process for Low-Damage Multijunction Solar Cell Fabrication

III-V/Ge Heterostructure Plasma Etching and Passivation With a Single Plasma Process for Low-Damage Multijunction Solar Cell Fabrication, - Université Grenoble Alpes Accéder directement au contenu Documentation FR Se connecter Portail HAL UGA Recherche Loading... Recherche avancée Information de documents Titres Titres Sous-titre Titre de l'ouvrage Titre du volume (Série) Champ de recherche par défaut (multicritères) + texte intégral des PDF Résumé Texte intégral indexé des documents PDF Mots-clés Type de document Sous-type de document Tous les identifiants du document Identifiant HAL du dépôt Langue du document (texte) Pays (Texte) Ville À paraître (true ou false) Ajouter Auteur Auteur (multicritères) Auteur (multicritères) Auteur : Nom complet Auteur : Nom de famille Auteur : Prénom Auteur : Complément de nom, deuxième prénom Auteur : Organisme payeur Auteur : IdHal (chaîne de …

Authors

Mathieu De Lafontaine,E Pargon,G Gay,C Petit-Etienne,J Barnes,N Rochat,M Volatier,A Jaouad,S Fafard,V Aimez,M Darnon

Published Date

2021/10/25

New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor

This paper reports on the fabrication of an enhancement-mode AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistor with a new barrier epi-layer design based on double Al 0.2 Ga 0.8 N barrier layers separated by a thin GaN layer. Normally-off transistors are achieved with good performances by using digital etching (DE) process for the gate recess. The gate insulator is deposited using two technics: plasma enhance chemical vapour deposition (sample A) and atomic layer deposition (sample B). Indeed, the two devices present a threshold voltage (V th) of+ 0.4 V and+ 0.9 V respectively with ΔV th about 0.1 V and 0.05 V extracted from the hysteresis gate capacitance measurement, a gate leakage current below 2× 10− 10 A mm− 1, an I ON/I OFF about 10 8 and a breakdown voltage of V BR= 150 V and 200 V respectively with 1.5 µm thick buffer layer. All these results are indicating a good …

Authors

Flavien Cozette,Bilal Hassan,Christophe Rodriguez,Eric Frayssinet,Rémi Comyn,François Lecourt,Nicolas Defrance,Nathalie Labat,François Boone,Ali Soltani,Abdelatif Jaouad,Yvon Cordier,Hassan Maher

Journal

Semiconductor Science and Technology

Published Date

2021/1/13

Impact of III-nitride/Si interface preconditioning on breakdown voltage in GaN-on-silicon HEMT

In this paper, an AIGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) device is realized. The device shows normal ON characteristics with a maximum current of 570 mA/mm at a gate-to-source voltage of 3 V, an on-state resistance of 7.3 Ω·mm and breakdown voltage of 500 V. The device has been modeled using numerical simulations to reproduce output and transfer characteristics. We identify, via experimental results and TCAD simulations, the main physical mechanisms responsible for the premature breakdown. The contribution of the AlN/Silicon substrate interface to the premature off-state breakdown is pointed out. Vertical leakage in lateral GaN devices significantly contributes to the off-state breakdown at high blocking voltages. The parasitic current path leads to premature breakdown before the appearance of avalanche or dielectric breakdown. A comparative study between a MOS-HEMT GaN on a silicon substrate with and without a SiNx interlayer at the AlN/Silicon substrate interface is presented here. We show that it is possible to increase the breakdown voltages of the fabricated transistors on a silicon substrate using SiNx interlayer.

Authors

Abdelkrim Khediri,Abbasia Talbi,Abdelatif Jaouad,Hassan Maher,Ali Soltani

Journal

Micromachines

Published Date

2021/10/21

Plasma Etching: an Enabler to Better Concentrated Photovoltaics Systems

Plasma Etching: an Enabler to Better Concentrated Photovoltaics Systems - Archive ouverte HAL Accéder directement au contenu Documentation FR Français (FR) Anglais (EN) Se connecter HAL science ouverte Recherche Loading... Recherche avancée Information de documents Titres Titres Sous-titre Titre de l'ouvrage Titre du volume (Série) Champ de recherche par défaut (multicritères) + texte intégral des PDF Résumé Texte intégral indexé des documents PDF Mots-clés Type de document Sous-type de document Tous les identifiants du document Identifiant HAL du dépôt Langue du document (texte) Pays (Texte) Ville À paraître (true ou false) Ajouter Auteur Auteur (multicritères) Auteur (multicritères) Auteur : Nom complet Auteur : Nom de famille Auteur : Prénom Auteur : Complément de nom, deuxième prénom Auteur : Organisme payeur Auteur : IdHal (chaîne de caractères) Auteur : Fonction Auteur : personID …

Authors

M Darnon,M De Lafontaine,P Albert,G Hamon,M Volatier,V Aimez,E Pargon,A Jaouad

Published Date

2021

Miniaturization of InGaP/InGaAs/Ge solar cells for micro‐concentrator photovoltaics

Micro‐concentrator photovoltaic (CPV), incorporating micro‐scale solar cells within concentrator photovoltaic modules, promises an inexpensive and highly efficient technology that can mitigate the drawbacks that impede standard CPV, such as resistive power losses. In this paper, we fabricate micro‐scale multijunction solar cells designed for micro‐CPV applications. A generic process flow, including plasma etching steps, was developed for the fabrication of complete InGaP/InGaAs/Ge microcells with rectangular, circular, and hexagonal active areas down to 0.089 mm2 (0.068‐mm2 mesa). Large cells (>1 mm2) demonstrate good electrical performance under one sun AM1.5D illumination, but a degradation in the open‐circuit voltage (VOC) is observed on the smallest cells. This effect is attributed to perimeter recombination for which a passivation effect by the antireflective coating partially recovers the VOC …

Authors

Pierre Albert,Abdelatif Jaouad,Gwenaëlle Hamon,Maïté Volatier,Christopher E Valdivia,Yannick Deshayes,Karin Hinzer,Laurent Béchou,Vincent Aimez,Maxime Darnon

Journal

Progress in Photovoltaics: Research and Applications

Published Date

2021/9

InGaP/InGaAs/Ge microcells robustness assessment

InGaP/InGaAs/Ge microcells robustness assessment - Archive ouverte HAL Accéder directement au contenu Documentation FR Français (FR) Anglais (EN) Se connecter HAL science ouverte Recherche Loading... Recherche avancée Information de documents Titres Titres Sous-titre Titre de l'ouvrage Titre du volume (Série) Champ de recherche par défaut (multicritères) + texte intégral des PDF Résumé Texte intégral indexé des documents PDF Mots-clés Type de document Sous-type de document Tous les identifiants du document Identifiant HAL du dépôt Langue du document (texte) Pays (Texte) Ville À paraître (true ou false) Ajouter Auteur Auteur (multicritères) Auteur (multicritères) Auteur : Nom complet Auteur : Nom de famille Auteur : Prénom Auteur : Complément de nom, deuxième prénom Auteur : Organisme payeur Auteur : IdHal (chaîne de caractères) Auteur : Fonction Auteur : personID (entier) Auteur : …

Authors

P Albert,Y Deshayes,G Hamon,A Jaouad,M Volatier,V Aimez,L Bechou,M Darnon

Published Date

2021

III-V/Ge multijunction solar cell with through cell via contact fabrication and characterization

In this paper, we present a complete microfabrication process for III-V/Ge triple junction solar cells with through cell via contacts. This architecture enables the transfer of the front side busbars and grid lines contact to the back side by using insulated and metallized vias to reduce both the shading and the resistive losses. Functional solar cells have been electrically characterized to demonstrate this through cell via contact proof of concept.

Authors

Mathieu De Lafontaine,Guillaume Gay,Erwine Pargon,Camille Petit-Etienne,Romain Stricher,Serge Ecoffey,Maïté Volatier,Abdelatif Jaouad,Simon Fafard,Vincent Aimez,Maxime Darnon

Published Date

2021/6/20

Improving Short-Circuit Current of Concentrator Solar Cells Using a Deposited Microbead Layer

Improving Short-Circuit Current of Concentrator Solar Cells Using a Deposited Microbead Layer - Archive ouverte HAL Accéder directement au contenu Documentation FR Français (FR) Anglais (EN) Se connecter HAL science ouverte Recherche Loading... Recherche avancée Information de documents Titres Titres Sous-titre Titre de l'ouvrage Titre du volume (Série) Champ de recherche par défaut (multicritères) + texte intégral des PDF Résumé Texte intégral indexé des documents PDF Mots-clés Type de document Sous-type de document Tous les identifiants du document Identifiant HAL du dépôt Langue du document (texte) Pays (Texte) Ville À paraître (true ou false) Ajouter Auteur Auteur (multicritères) Auteur (multicritères) Auteur : Nom complet Auteur : Nom de famille Auteur : Prénom Auteur : Complément de nom, deuxième prénom Auteur : Organisme payeur Auteur : IdHal (chaîne de caractères) Auteur : …

Authors

A Ritou,P St-Pierre,GP Forcade,O Dellea,M Volatier,A Jaouad,E Valdivia,K Hinzer,Maxime Darnon

Published Date

2020

Nanostructured surface for extended temperature operating range in concentrator photovoltaic modules

Concentrator photovoltaic (CPV) systems that use silicone-on-glass Fresnel lenses as their primary optical element have reduced power output at high and low lens temperatures. We show that incorporating a nanostructured surface on the solar cell stabilizes best module performance over an extended operating temperature range. We model the optical properties of a self-organized monolayer of glass beads deposited on a polydimethylsiloxane (PDMS) encapsulated solar cell in a CPV sub-module. Our model combines transfer matrix method (TMM), rigorous coupled wave analysis (RCWA), and ray tracing to quickly and accurately simulate the system. We find the short-circuit current gain increases as the lens deviates from its designed working temperature for all bead sizes, and that 400 nm diameter beads submerged halfway into PMDS have the highest gain (up to 2.6%).

Authors

Gavin Forcade,Christopher E Valdivia,Philippe St-Pierre,Arnaud Ritou,Maïté Volatier,Abdelatif Jaouad,Maxime Darnon,Karin Hinzer

Journal

AIP Conference Proceedings

Published Date

2020/11/9

Mechanisms of a Rectifying TiN Gate Contact for AlGaNGaN HEMTs on Silicon Substrate

Rectifying Titanium Nitride (TiN) gate contact technology is developed for AlGaN/GaN based micro and nanometer HEMTs. A high compressive strain occurring in thinner TiN films (ranging from 5 nm to 60 nm), deposited by sputtering, leads to a reduction in tensile strain at the surface of AlGaN barrier. The diminution in tensile strain forms a pseudo-p-type layer (diodelike). This strain reduction has no effect on the bandgap of the AlGaN barrier layer, allowing the gate to withstand a reverse gate bias larger than 100 V. Characterization using the high-resolution transmission electron microscopy combined with the X-ray photoelectron spectroscopy reveals a good TiN/AlGaN interface quality and no diffusion of TiN into AlGaN. The effective energy barrier of the rectifying nanoscale TiN gate contact has a relatively large height of 1.1 eV associated with an ideality factor of 1.4. A dramatic drop of the reverse-bias leakage …

Authors

Hassane Ouazzani Chahdi,Brahim Benbakhti,Maghnia Mattalah,Jean Claude Gerbedoen,Abdelatif Jaouad,Nour Eddine Bourzgui,Ali Soltani

Journal

IEEE Transactions on Nanotechnology

Published Date

2020/8/27

New architectures of Concentrated Photovoltacs (CPV) solar cells

New architectures of Concentrated Photovoltacs (CPV) solar cells - Archive ouverte HAL Accéder directement au contenu Documentation FR Français (FR) Anglais (EN) Se connecter HAL science ouverte Recherche Loading... Recherche avancée Information de documents Titres Titres Sous-titre Titre de l'ouvrage Titre du volume (Série) Champ de recherche par défaut (multicritères) + texte intégral des PDF Résumé Texte intégral indexé des documents PDF Mots-clés Type de document Sous-type de document Tous les identifiants du document Identifiant HAL du dépôt Langue du document (texte) Pays (Texte) Ville À paraître (true ou false) Ajouter Auteur Auteur (multicritères) Auteur (multicritères) Auteur : Nom complet Auteur : Nom de famille Auteur : Prénom Auteur : Complément de nom, deuxième prénom Auteur : Organisme payeur Auteur : IdHal (chaîne de caractères) Auteur : Fonction Auteur : personID (entier) …

Authors

Gwenaelle Hamon,M De Lafontaine,X Mackre-Delannoy,M Volatier,V Aimez,A Jaouad,Maxime Darnon

Published Date

2020

Demonstration of back contacted III-V/Ge triple junction solar cells

Lattice matched III-V/Ge solar cells are mainstream for Concentrator PhotoVoltaics (CPV). Having both contacts on the back side could increase efficiency thanks to reduced shading and would provide an alternative to wirebonding, shingling and MIMs as interconnections methods. In this paper, we present the first demonstration of back side contacted lattice matched III-V on Ge solar cell (InGaP/(In) GaAs/Ge). A specific process was developed to fabricate solar cells with a VOC of 2, 38 V and a JSC of 9, 9 mA/cm². This result is a proof of concept and further developments should increase cell performance.

Authors

Xavier Mackré-Delannoy,Gwenaelle Hamon,Maïté Volatier,Abdelatif Jaouad,Vincent Aimez,Maxime Darnon

Journal

AIP Conference Proceedings

Published Date

2020/11/9

High performance dual junction GaInP/GaAs for concentrator photovoltaic quad-junction

Series-connected four (quad) junctions (4J) resulting from the combination of III-V and group IV materials have the potential to improve solar cells efficiency under concentration (X). In this work, we investigate the performance of dual junction (2J) GaInP/GaAs that might be used with group IV (SiGeSn) cells as bottom cells, to validate the epitaxial structure and the fabrication process of future 4J cells. We vary gridline spacings for two different solar cells sizes, to optimize solar cells performance in the range of 100X to 1000X. The obtained results are close to the state-of-the-art and are promising for high performance 4J.

Authors

Alex Brice Poungoué Mbeunmi,Artur Turala,Roxana Arvinte,Abdelatif Jaouad,Vincent Aimez,Richard Arès,Abderraouf Boucherif,Simon Fafard

Published Date

2020/6/15

Comparison of the performances of various InGaAs-based solar cells for concentrated photovoltaic applications

Comparison of the performances of various InGaAs-based solar cells for concentrated photovoltaic applications - Archive ouverte HAL Accéder directement au contenu Documentation FR Français (FR) Anglais (EN) Se connecter HAL science ouverte Recherche Loading... Recherche avancée Information de documents Titres Titres Sous-titre Titre de l'ouvrage Titre du volume (Série) Champ de recherche par défaut (multicritères) + texte intégral des PDF Résumé Texte intégral indexé des documents PDF Mots-clés Type de document Sous-type de document Tous les identifiants du document Identifiant HAL du dépôt Langue du document (texte) Pays (Texte) Ville À paraître (true ou false) Ajouter Auteur Auteur (multicritères) Auteur (multicritères) Auteur : Nom complet Auteur : Nom de famille Auteur : Prénom Auteur : Complément de nom, deuxième prénom Auteur : Organisme payeur Auteur : IdHal (chaîne de …

Authors

F Chancerel,P Regreny,JL Leclercq,M Volatier,A Jaouad,Maxime Darnon,S Fafard,Michel Gendry,Vincent Aimez

Published Date

2020

Towards miniaturization of concentrated photovoltaics (CPV): impact on fabrication, performance and robustness of solar cells

Micro-CPV is emerging with the potential to overcome conventional CPV weaknesses. With cells miniaturization, fabrication processes, electrical performance and potentially reliability are impacted. We present here improved fabrication techniques to provide high performance microcells and high wafer throughput. We demonstrate cells fabrication with active area ranging from 1 mm 2 to 0.076 mm 2 with 8.1 % reduced V OC for smallest cells, attributed to perimeter surface recombination. All cells present no dramatic failure during passive or active ageing tests, which is promising for the future development of micro-CPV technologies.

Authors

Pierre Albert,Gwenaëlle Hamon,Maïté Volatier,Yannick Deshayes,Abdelatif Jaouad,Vincent Aimez,Laurent Béchou,Maxime Darnon

Published Date

2020/6/15

Direct growth of GaAs solar cells on Si substrate via mesoporous Si buffer

Due to Silicon (Si) material abundance and lower cost, integration of high efficiency III-V solar cells on Si substrates is of major importance for future solar energy harvesting devices. In this paper, we report on the growth optimization with a detailed characterization of epitaxial growth of crystalline GaAs on porous silicon layers (PSL), and demonstration of single-junction GaAs solar cell on PSL performances. GaAs deposition is performed on engineered porous Si surfaces with different growth temperatures. One and two-steps growth (TSG) were also investigated. X-ray diffraction demonstrated almost one order of magnitude lower threading dislocation density (TDD) of 2× 108 cm-2 for TSG process of GaAs on PSL compared to the one-step growth. Atomic Force Microscopy and Scanning Electron Microscopy showed that a reduction of growth temperature leads to surface morphology improvement. A single junction …

Authors

AB Poungoue Mbeunmi,M El-Gahouchi,R Arvinte,A Jaouad,R Cheriton,M Wilkins,CE Valdivia,K Hinzer,S Fafard,V Aimez,R Arès,A Boucherif

Journal

Solar Energy Materials and Solar Cells

Published Date

2020/11/1

Multijunction Solar Cell Electrical Isolation and Passivation with a Single Plasma Process

Multijunction Solar Cell Electrical Isolation and Passivation with a Single Plasma Process - Archive ouverte HAL Accéder directement au contenu Documentation FR Français (FR) Anglais (EN) Se connecter HAL science ouverte Recherche Loading... Recherche avancée Information de documents Titres Titres Sous-titre Titre de l'ouvrage Titre du volume (Série) Champ de recherche par défaut (multicritères) + texte intégral des PDF Résumé Texte intégral indexé des documents PDF Mots-clés Type de document Sous-type de document Tous les identifiants du document Identifiant HAL du dépôt Langue du document (texte) Pays (Texte) Ville À paraître (true ou false) Ajouter Auteur Auteur (multicritères) Auteur (multicritères) Auteur : Nom complet Auteur : Nom de famille Auteur : Prénom Auteur : Complément de nom, deuxième prénom Auteur : Organisme payeur Auteur : IdHal (chaîne de caractères) Auteur : Fonction …

Authors

Mathieu de Lafontaine,E Pargon,G Gay,C Petit-Etienne,S David,JP Barnes,N Rochat,A Jaouad,M Volatier,S Fafard,V Aimez,Maxime Darnon

Published Date

2020

Unconventional triple junction solar cells based on micro technologies

Triple junction solar cells are the heart of concentrated photovoltaic systems. We present here microfabrication processes that are especially developed to enable advanced triple junction solar cells structures that have a potential of improvement of the CPV competitivity. Plasma etching processes and redistribution layer fabrication methods are reported and applied to fabricate solar cells with base and emitter contacts both on the front side or both on the rear side of the cells.

Authors

Maxime Darnon,Maïté Volatier,Gwenaelle Hamon,Pierre Albert,Mathieu de Lafontaine,Xavier Mackre Delannoy,Olivier Richard,Vincent Aimez,Laurent Bechou,Erwine Pargon,Abdelatif Jaouad

Published Date

2020/6/15

Self‐powered light‐induced plating for III‐V/Ge triple‐junction solar cell metallization

We present a new process to deposit thick front emitter contact on multijunction solar cells using a self‐powered light‐induced plating (SP‐LIP). This electrochemical deposition method is based on the use of the light‐induced polarization of the cell to drive the plating current instead of the use of an external power supply as for standard electroplating. The electrical characterization of the process is performed by current and potential measurements at various light intensities and enables the deposition of thick layers of various metals (Ag, Ni, and Au) on triple‐junction solar cells with a precise control of the metal thickness. The potential of SP‐LIP for the deposition of an ohmic contact layer directly on the solar cell front side without any seed layer is also demonstrated. A triple‐junction solar cell fabricated with both ohmic and thick metal front contact deposited only by an electrochemical method is reported.

Authors

Clément Laucher,Gwenaëlle Hamon,Artur Turala,Maïté Volatier,Maxime Darnon,Vincent Aimez,Abdelatif Jaouad

Journal

Energy Science & Engineering

Published Date

2020/10

Nanostructured Surfaces in Concentrator Photovoltaic Modules: Temperature Dependent Performance Improvements

Nanostructured Surfaces in Concentrator Photovoltaic Modules: Temperature Dependent Performance Improvements - Archive ouverte HAL Accéder directement au contenu Documentation FR Français (FR) Anglais (EN) Se connecter HAL science ouverte Recherche Loading... Recherche avancée Information de documents Titres Titres Sous-titre Titre de l'ouvrage Titre du volume (Série) Champ de recherche par défaut (multicritères) + texte intégral des PDF Résumé Texte intégral indexé des documents PDF Mots-clés Type de document Sous-type de document Tous les identifiants du document Identifiant HAL du dépôt Langue du document (texte) Pays (Texte) Ville À paraître (true ou false) Ajouter Auteur Auteur (multicritères) Auteur (multicritères) Auteur : Nom complet Auteur : Nom de famille Auteur : Prénom Auteur : Complément de nom, deuxième prénom Auteur : Organisme payeur Auteur : IdHal (chaîne de …

Authors

GP Forcade,CE Valdivia,P St-Pierre,M Volatier,A Jaouad,A Ritou,Maxime Darnon,K Hinzer

Published Date

2020

Climate impact analysis on the optimal sizing of a stand-alone hybrid building

In this paper, a new approach to study the impact of the climate on the optimal sizing of a stand-alone PV/hydrogen/battery-based hybrid building is presented. A general method is described to evaluate the thermal need of the building, as well as the local photovoltaic resource, rather than using specific data available for large purpose applications. The proposed approach enables comparison studies between different places and climatic conditions. Considering a specific autonomous building, a comparative study is provided for different areas worldwide: Moscow, Cairo, Paris, Hanoi and Montreal. A Genetic Algorithm is used to provide an optimal size and energy capacity estimation for each location. The objective is to minimize the total cost while constraining the Loss of Power Supply Probability (LPSP) and the State of Charge (SoC) of the long-term storage element over one year. The sizing results between the …

Authors

Jules Voisin,Maxime Darnon,Abdelatif Jaouad,Maite Volatier,Vincent Aimez,Joao P Trovao

Journal

Energy and Buildings

Published Date

2020/3/1

Mechanisms of GaAs surface passivation by a one-step dry process using low-frequency plasma enhanced chemical deposition of silicon nitride

III-V materials are known for their high surface states densities which degrade the performances of photonic and electronic devices. Plasma-enhanced chemical vapor deposition of SixNy is commonly used to passivate surface states and to encapsulate III-V devices and circuits. The plasma is generated with an RF excitation source usually set at a high frequency of 13.56 MHz. To obtain a high quality III-V/SixNy interface, many chemical surface treatments are required before deposition, as well as post-deposition thermal annealing. In this work, we demonstrate that a low-frequency plasma allows for an efficient passivation process by a simple deposition of SixNy, without any wet chemical pretreatment nor post-deposition annealing. This dry process is more compatible with the passivation and encapsulation of completed III-V devices and circuits. Metal-insulator-semiconductor capacitors were fabricated by …

Authors

Olivier Richard,Sonia Blais,Richard Arès,Vincent Aimez,Abdelatif Jaouad

Journal

Microelectronic Engineering

Published Date

2020/9/15

Abdelatif Jaouad FAQs

What is Abdelatif Jaouad's h-index at Université de Sherbrooke?

The h-index of Abdelatif Jaouad has been 12 since 2020 and 17 in total.

What are Abdelatif Jaouad's top articles?

The articles with the titles of

High‐efficiency GaAs solar cells grown on porous germanium substrate with PEELER technology

Indoor and Outdoor Characterization of III-V/Ge Solar Cells Assembled on Glass Substrate for Concentrated Photovoltaic Applications

3D interconnects for III-V semiconductor heterostructures for miniaturized power devices

Wafer-scale detachable monocrystalline germanium nanomembranes for the growth of III–V materials and substrate reuse

New Triple-Junction Solar Cell Assembly Process for Concentrator Photovoltaic Applications

Low-Cost Passivated Al Front Contacts for III-V/Ge Multijunction Solar Cells

Présentation du GIP-CNFM-CIME Nanotech

Outdoor Characterization of Solar Cells With Microstructured Antireflective Coating in a Concentrator Photovoltaic Monomodule

...

are the top articles of Abdelatif Jaouad at Université de Sherbrooke.

What are Abdelatif Jaouad's research interests?

The research interests of Abdelatif Jaouad are: III-V and GaN passivation, Photovoltaics, CPV, PECVD, ICP

What is Abdelatif Jaouad's total number of citations?

Abdelatif Jaouad has 1,157 citations in total.

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