A Azizur Rahman

Professor Information

University

Tata Institute of Fundamental Research

Position

Scientific Officer

Citations(all)

830

Citations(since 2016)

492

Cited By

552

hIndex(all)

14

hIndex(since 2016)

10

i10Index(all)

17

i10Index(since 2016)

11

Email

University Profile Page

Tata Institute of Fundamental Research

Research & Interests List

III-Nitrides

Co-Authors

H-index: 88
Debdeep Jena

Debdeep Jena

Cornell University

H-index: 80
Huili Grace Xing

Huili Grace Xing

Cornell University

H-index: 67
Michael Kneissl

Michael Kneissl

Technische Universität Berlin

H-index: 35
Arumugam Thamizhavel

Arumugam Thamizhavel

Tata Institute of Fundamental Research

H-index: 30
Arnab Bhattacharya

Arnab Bhattacharya

Tata Institute of Fundamental Research

H-index: 29
Mandar M. Deshmukh

Mandar M. Deshmukh

Tata Institute of Fundamental Research

H-index: 27
Brij Mohan Arora

Brij Mohan Arora

Indian Institute of Technology Bombay

H-index: 22
Ashish Arora

Ashish Arora

Westfälische Wilhelms-Universität Münster

H-index: 17
Nirupam Hatui

Nirupam Hatui

University of California, Santa Barbara

Professor FAQs

What is A Azizur Rahman's h-index at Tata Institute of Fundamental Research?

The h-index of A Azizur Rahman has been 10 since 2016 and 14 in total.

What are A Azizur Rahman's research interests?

The research interests of A Azizur Rahman are: III-Nitrides

What is A Azizur Rahman's total number of citations?

A Azizur Rahman has 830 citations in total.

What are the co-authors of A Azizur Rahman?

The co-authors of A Azizur Rahman are Debdeep Jena, Huili Grace Xing, Michael Kneissl, Arumugam Thamizhavel, Arnab Bhattacharya, Mandar M. Deshmukh, Brij Mohan Arora, Ashish Arora, Nirupam Hatui.

Top articles of A Azizur Rahman

Synthesis of Cu3SbS4, Cu3SbSe4 and CuSbTe2 thin films via chalcogenation of sputtered Cu-Sb metal precursors

Abstract Cu-Sb-X (X= S, Se, Te) based ternary chalcogenide semiconductors are potential candidates for photovoltaic and thermoelectric applications. We report the synthesis of Cu 3 SbS 4, Cu 3 SbSe 4 and CuSbTe 2 thin films by a two-stage process. The thin films were prepared by the deposition of Cu and Sb precursors on to a sapphire substrate by radio frequency magnetron co-sputtering followed by a subsequent chalcogenation process. The crystallinity, compositional, morphological and optical properties of the synthesized samples were investigated by x-ray diffraction, elemental analyses, scanning electron microscopy, optical spectroscopy and Raman spectroscopy. The Raman spectra of the synthesized Cu 3 SbS 4, Cu 3 SbSe 4 and CuSbTe 2 samples show dominant modes at 319 c m− 1, 184 cm− 1, and 114 cm− 1, and the band edges estimated from the transmittance and reflectance spectra, are 1.0 …

Authors

A Azizur Rahman,Arnab Bhattacharya,Arun Sarma

Journal

Thin solid films

Publish By

Elsevier

Publish Date

2022/7/31

Influence of Nucleation Layers on MOVPE Growth of Semipolar () GaN on m-Plane Sapphire

The influence of the underlying nucleation layer on the properties of semipolar GaN grown on m-plane sapphire by metalorganic vapor-phase epitaxy has been investigated. GaN epilayers of ~ 1 μm thickness were grown using four different initiating sequences: low-temperature AlN and GaN, and high-temperature AlN buffer layers, and directly (high-temperature GaN). The choice of nucleation layer had a pronounced effect on the surface morphology and crystal quality of the overlying GaN epilayer. In comparison, direct growth of GaN without any buffer layer provided the best crystal quality with a rocking-curve full-width at half-maximum (FWHM) value of 720 arcsec along the direction and relatively enhanced near-band-edge photoluminescence emission, thus showing this direct growth process to be a simple route for synthesis of semipolar GaN layers.

Authors

A Azizur Rahman,Nirupam Hatui,Carina B Maliakkal,Priti Gupta,Jayesh B Parmar,Bhagyashree A Chalke,Arnab Bhattacharya

Journal

Journal of Electronic Materials

Publish By

Springer US

Publish Date

2021/8

Synthesis and characterization of Cu 3 SbS 4 thin films grown by co-sputtering metal precursors and subsequent sulfurization

Cu3SbS4 (famatinite) thin films were synthesized using a two-step process: Cu and Sb metals were first deposited by RF magnetron sputtering, followed by subsequent sulfurization. The influence of metal precursor ratio, sulfurization temperature and time on surface morphology, composition, and structural and optical properties was systematically investigated. X-ray diffraction and Raman analysis revealed the formation of Cu3SbS4 phase thin films, where the crystallinity and phase purity improve with sulfurization temperature. Synthesis at a process temperature of 425 °C gave phase-pure Cu3SbS4 thin film with uniform surface morphology, whereas secondary phases were formed at reaction temperatures lower than 400 °C. A temperature higher than 425 °C led to films with voids between the crystallites. The bandgap of the optimized films was measured to be 0.89 eV and 0.83 eV using UV-VIS-NIR …

Authors

A Azizur Rahman,Emroj Hossian,Hetal Vaishnav,Jayesh B Parmar,Arnab Bhattacharya,Arun Sarma

Journal

Materials Advances

Publish By

Royal Society of Chemistry

Publish Date

2020

Temperature-dependence of Cl2/Ar ICP-RIE of polar, semipolar, and nonpolar GaN and AlN following BCl3/Ar breakthrough plasma

The authors report a comprehensive investigation of temperature-dependence of inductively coupled plasma reactive ion etching (ICP-RIE) of polar (0001), semipolar (11− 22), and nonpolar (11− 20) GaN and AlN, in the temperature range of 22–205 C. The main objective is to study the effect of ICP etching near and beyond the boiling point of the volatile etch end-products: GaCl 3 (201 C) for GaN and AlCl 3 (180 C) for AlN. High-temperature ICP-RIE is beneficial in quicker removal of surface oxides and may permit the use of a single-step Cl 2/Ar ICP-RIE for etching all orientations of GaN and AlN. However, the best results are still obtained with a combination of BCl 3-plasma based surface oxide removal pretreatment and Cl 2/Ar ICP-RIE etching, which provides a constant etch rate with a smooth surface morphology irrespective of the etching temperature.

Authors

Amit P Shah,A Azizur Rahman,Arnab Bhattacharya

Journal

Journal of Vacuum Science & Technology A

Publish By

AIP Publishing

Publish Date

2020/1/1

Growth of high-quality GaN on (1 0 0) Ga2O3 substrates by facet-controlled MOVPE

We report a comprehensive study of the growth of GaN layers on (1 0 0)-oriented Ga2O3 substrates by metalorganic vapour phase epitaxy (MOVPE), especially the improvement on using an intermediate facet-control layer between the low-temperature buffer and the high-temperature GaN layer compared to the usual two-step growth process. We examined in detail the effects of substrate nitridation, carrier gas, and variation of the thickness of the low-temperature buffer GaN layer, and the thickness and growth temperature of the facet layer. This optimization allowed us to obtain GaN layers on (1 0 0)-oriented Ga2O3 with high structural and optical quality, as shown by high-resolution X-ray diffraction, electron microscopy, optical absorption, and luminescence measurements.

Authors

Emroj Hossain,A Azizur Rahman,Mahesh Gokhale,Ruta Kulkarni,Rajib Mondal,Arumugam Thamizhavel,Arnab Bhattacharya

Journal

Journal of Crystal Growth

Publish By

North-Holland

Publish Date

2019/10/15

Laser induced structural phase transitions in Cu3SbS4 thin films

We investigate the laser-induced structural phase transition of Cu 3 SbS 4 to CuSbS 2. The Cu 3 SbS 4 thin films were synthesized by a two-stage process of sputtering and subsequent sulfurization. The as-grown films were characterized by x-ray diffraction and Raman spectroscopy to investigate the phase purity of the material. The Cu 3 SbS 4 thin films were irradiated with 532 nm CW laser light at different power densities and in situ Raman spectroscopy was used to investigate the phase transitions. Experimental results show an evidence of local CuSbS 2 phase formation from Cu 3 SbS 4 phase in the laser annealed areas above a critical power density. Heat transfer equations solved using COMSOL Multiphysics were used to estimate the surface temperature during the laser irradiation process.

Authors

A Azizur Rahman,Emroj Hossain,Hetal Vaishnav,Arnab Bhattacharya,Arun Sarma

Journal

Semiconductor Science and Technology

Publish By

IOP Publishing

Publish Date

2019/9/23

Optimization of Gas Ambient for High Quality β-Ga2O3 Single Crystals Grown by the Optical Floating Zone Technique

β-Ga 2 O 3 is a promising wide-bandgap semiconductor material for power electronic applications and as a conducting substrate for GaN growth. In this work, we report the growth of high quality single crystal β-Ga 2 O 3 by the optical floating zone technique. A detailed study of the effect of gas ambient on the quality of Ga 2 O 3 single crystals was carried out, with the structural quality investigated using Laue, single crystal and powder X-ray diffraction measurements, and the optical properties studied using transmission, photoluminescence, and Raman scattering measurements. Under optimized conditions high-quality,∼ 1 cm diameter and∼ 8-10 cm length Ga 2 O 3 single crystals with X-ray FWHM values of∼ 22''for the (400) reflection, comparable to commercially available Ga 2 O 3 wafers, could be demonstrated.

Authors

Emroj Hossain,Ruta Kulkarni,Rajib Mondal,Swati Guddolian,A Azizur Rahman,Arumugam Thamizhavel,Arnab Bhattacharya

Journal

ECS Journal of Solid State Science and Technology

Publish By

IOP Publishing

Publish Date

2019/3/15

Abrasive Free Chemical Mechanical Planarization of Semi-Polar (11–22) GaN: Effect on Structural and Surface Properties and Subsequent Homoepitaxial Growth

The implementation of abrasive free chemical mechanical planarization (AFCMP) as an intermediate step to improve the structural and surface qualities of semi-polar (11–22) GaN device layer has been investigated. As-grown semi-polar (11–22) GaN surfaces were polished and characterized for surface finish using AFM and optical surface profiler to investigate the effect of surface planarity. Atomically flat surface with rms roughness of 4 Å was achieved over a scan area of 5× 5 μm 2 with a polishing rate of∼ 2.50 μm/hr. Further, this polished wafer was used as a template for the homoepitaxial re-growth of semi-polar (11–22) GaN epilayer. In comparison to as-grown and polished surfaces, the re-grown surface showed a good crystal quality with a reduced full width at half maximum (FWHM) value of 535 arc sec, obtained from X-ray Rocking Curve (XRC) along [11–2–3] direction. Around 0.3 GPa of in-plane stress …

Authors

P Parthiban,A Azizur Rahman,Arnab Bhattacharya,D Das

Journal

ECS Journal of Solid State Science and Technology

Publish By

IOP Publishing

Publish Date

2018/3/20

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